Processes and materials for step and flash imprint lithography
    1.
    发明申请
    Processes and materials for step and flash imprint lithography 有权
    步进和闪光压印光刻的工艺和材料

    公开(公告)号:US20070051697A1

    公开(公告)日:2007-03-08

    申请号:US11219095

    申请日:2005-09-02

    IPC分类号: B44C1/22

    摘要: A method of forming an image. The method includes: a transfer layer on a substrate; forming on the transfer layer, an etch barrier layer; pressing a template having a relief pattern into the etch barrier layer; exposing the etch barrier layer to actinic radiation forming a cured etch barrier layer having thick and thin regions corresponding to the relief pattern; removing the template; removing the thin regions of the cured etch barrier layer; removing regions of the transfer layer not protected by the etch barrier layer; removing regions of the substrate not protected by the transfer layer and any remaining etch barrier layer; and removing remaining transfer layer. The transfer layer may be removed using a solvent, the etch barrier layer may include a release agent and an adhesion layer may be formed between the transfer layer and the etch barrier layer. A reverse tone process is also described.

    摘要翻译: 一种形成图像的方法。 该方法包括:在基板上的转印层; 在转印层上形成蚀刻阻挡层; 将具有浮雕图案的模板压入蚀刻阻挡层中; 将蚀刻阻挡层暴露于形成具有对应于浮雕图案的厚和薄区域的固化蚀刻阻挡层的光化辐射; 删除模板; 去除固化的蚀刻阻挡层的薄区域; 除去未被蚀刻阻挡层保护的转移层的区域; 除去未被转移层保护的衬底的区域和任何剩余的蚀刻阻挡层; 并去除剩余的转移层。 可以使用溶剂去除转移层,蚀刻阻挡层可以包括脱模剂,并且可以在转移层和蚀刻阻挡层之间形成粘合层。 还描述了反向色调处理。

    Fluorinated vinyl ethers, copolymers thereof, and use in lithographic photoresist compositions
    2.
    发明申请
    Fluorinated vinyl ethers, copolymers thereof, and use in lithographic photoresist compositions 审中-公开
    氟化乙烯基醚,其共聚物,并用于平版印刷光刻胶组合物

    公开(公告)号:US20060287558A1

    公开(公告)日:2006-12-21

    申请号:US11503356

    申请日:2006-08-10

    IPC分类号: C07C41/00

    摘要: Fluorinated vinyl ethers are provided having the structure of formula (I) the structure of formula (I) wherein at least one of X and Y is a fluorine atom, and L, R1, R2, R3, R4 are as defined herein. Also provided are copolymers prepared by radical polymerization of (I) and a second monomer that may not be fluorinated. The polymers are useful in lithographic photoresist compositions, particularly chemical amplification resists. In a preferred embodiment, the polymers are substantially transparent to deep ultraviolet (DUV) radiation, and are thus useful in DUV lithographic photoresist compositions. A method for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

    摘要翻译: 提供具有式(I)结构的式(I)结构的氟化乙烯基醚,其中X和Y中的至少一个是氟原子,L,R 1,R 2, R 2,R 4,R 4如本文所定义。 还提供了通过(I)的自由基聚合和可以不被氟化的第二单体制备的共聚物。 聚合物可用于平版印刷光刻胶组合物,特别是化学增强抗蚀剂。 在优选的实施方案中,聚合物对深紫外(DUV)辐射基本上是透明的,因此可用于DUV平版光刻胶组合物。 还提供了使用该组合物在基板上产生抗蚀剂图像的方法,即在集成电路等的制造中。

    Fluorinated vinyl ethers, copolymers thereof, and use in lithographic photoresist compositions
    3.
    发明申请
    Fluorinated vinyl ethers, copolymers thereof, and use in lithographic photoresist compositions 有权
    氟化乙烯基醚,其共聚物,并用于平版印刷光刻胶组合物

    公开(公告)号:US20060275701A1

    公开(公告)日:2006-12-07

    申请号:US11501186

    申请日:2006-08-07

    IPC分类号: G03C1/00

    摘要: Copolymers prepared by copolymerization of at least one fluorinated vinyl ether are provided. In one embodiment, the at least one fluorinated vinyl ether comprises ethylene directly substituted at an olefinic carbon atom with a moiety —OR* and optionally substituted with one, two, or three additional nonhydrogen substituents, wherein R* comprises a fluorinated alkyl moiety substituted with a protected or unprotected hydroxyl group, and further wherein an atom within R* may be (i) taken together with one of the additional nonhydrogen substituents, if present, or (ii) directly bound to an olefinic carbon atom, to form a ring. The polymers are useful, for example, in lithographic photoresist compositions, particularly chemical amplification resists. In a preferred embodiment, the polymers are substantially transparent to deep ultraviolet (DUV) radiation, and are thus useful in DUV lithographic photoresist compositions. A method for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

    摘要翻译: 提供通过至少一种氟化乙烯基醚的共聚制备的共聚物。 在一个实施方案中,所述至少一种氟化乙烯基醚包括在烯烃碳原子处直接被部分-OR *取代的乙烯,并任选地被一个,两个或三个另外的非氢取代基取代,其中R *包含被 保护或未保护的羟基,并且其中R *中的原子可以(i)与另外的非氢取代基之一(如果存在)或(ii)直接键合到烯属碳原子一起形成环。 聚合物可用于例如平版光刻胶组合物,特别是化学增强抗蚀剂。 在优选的实施方案中,聚合物对深紫外(DUV)辐射基本上是透明的,因此可用于DUV平版光刻胶组合物。 还提供了使用该组合物在基板上产生抗蚀剂图像的方法,即在集成电路等的制造中。

    NEGATIVE RESISTS BASED ON A ACID-CATALYZED ELIMINATION OF POLAR MOLECULES
    4.
    发明申请
    NEGATIVE RESISTS BASED ON A ACID-CATALYZED ELIMINATION OF POLAR MOLECULES 有权
    基于酸性催化消除极性分子的负性电阻

    公开(公告)号:US20070026339A1

    公开(公告)日:2007-02-01

    申请号:US10449181

    申请日:2003-05-29

    IPC分类号: G03C1/00

    摘要: The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.

    摘要翻译: 本发明提供了可用于负性抗蚀剂组合物的聚合物。 本发明的聚合物包含(1)具有极性官能团的第一单体; (2)第二单体; 和(3)赋予选自可交联官能团,耐蚀刻性和溶解度调制中的至少一种特性的第三单体。 第一单体在消除极性官能团时提供酸催化的极性开关,而第二单体提供水溶解。 本发明的聚合物可以并入负性抗蚀剂组合物,其还可以包括光酸产生剂,交联剂,碱性化合物,溶剂,溶解促进剂,光碱产生剂,潜碱性化合物,表面活性剂,粘合促进剂和消泡剂。

    photoresist composition
    7.
    发明申请
    photoresist composition 有权
    光致抗蚀剂组合物

    公开(公告)号:US20060128914A1

    公开(公告)日:2006-06-15

    申请号:US11330659

    申请日:2006-01-12

    IPC分类号: C08F220/22

    摘要: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.

    摘要翻译: 提供了一种光致抗蚀剂组合物,其包括具有至少一个具有下式的丙烯酸酯或甲基丙烯酸酯单体的聚合物,其中R 1表示氢(H),1至20个碳的直链或支链烷基或 1至20个碳的半或全氟化的直链或支链烷基; 其中R 2表示未取代的脂族基团或具有与取代的脂族基团的每个碳上连接的具有0或1个三氟甲基(CF 3 N 3)基团的取代的脂族基团,或 取代或未取代的芳基; 其中R 3表示氢(H),甲基(CH 3),三氟甲基(CF 3),二氟甲基(CHF 2) (CH 2 CO 2),或半或全氟化脂族链; 并且其中R 4表示三氟甲基(CF 3 S),二氟甲基(CH 2)2,氟甲基(CH 2 CH 2) )或半或全氟取代或未取代的脂族基团。 本文还提供了使用光致抗蚀剂组合物图案化衬底的方法。

    Photoresist composition
    8.
    发明申请
    Photoresist composition 失效
    光刻胶组成

    公开(公告)号:US20050019696A1

    公开(公告)日:2005-01-27

    申请号:US10916934

    申请日:2004-08-12

    摘要: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl(CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl(CH3), trifluoromethyl(CF3), difluoromethyl(CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl(CF3), difluoromethyl(CHF2), fluoromethyl(CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.

    摘要翻译: 提供了一种光致抗蚀剂组合物,其包括具有至少一个具有下式的丙烯酸酯或甲基丙烯酸酯单体的聚合物:其中R 1表示氢(H),1至20个碳的直链或支链烷基,或半或全氟化线性 或碳原子数为1〜20的支链烷基; 并且其中R 2表示未取代的脂族基团或具有连接在取代的脂族基团的每个碳上的零个或一个三氟甲基(CF 3)基团的取代的脂族基团,或取代或未取代的芳族基团; 并且其中R 3表示氢(H),甲基(CH 3),三氟甲基(CF 3),二氟甲基(CHF 2),氟甲基(CH 2 F)或半或全氟化脂族链; 并且其中R 4表示三氟甲基(CF 3),二氟甲基(CHF 2),氟甲基(CH 2 F)或半或全氟取代或未取代的脂族基团。 本文还提供了使用光致抗蚀剂组合物图案化衬底的方法。

    Negative resists based on acid-catalyzed elimination of polar molecules
    9.
    发明申请
    Negative resists based on acid-catalyzed elimination of polar molecules 失效
    基于酸催化消除极性分子的负电阻

    公开(公告)号:US20070259274A1

    公开(公告)日:2007-11-08

    申请号:US11820862

    申请日:2007-06-20

    IPC分类号: G03C1/705 G03C5/16

    摘要: The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.

    摘要翻译: 本发明提供了可用于负性抗蚀剂组合物的聚合物。 本发明的聚合物包含(1)具有极性官能团的第一单体; (2)第二单体; 和(3)赋予选自可交联官能团,耐蚀刻性和溶解度调制中的至少一种特性的第三单体。 第一单体在消除极性官能团时提供酸催化的极性开关,而第二单体提供水溶解。 本发明的聚合物可以并入负性抗蚀剂组合物,其还可以包括光酸产生剂,交联剂,碱性化合物,溶剂,溶解促进剂,光碱产生剂,潜碱性化合物,表面活性剂,粘合促进剂和消泡剂。

    Low activation energy dissolution modification agents for photoresist applications
    10.
    发明申请
    Low activation energy dissolution modification agents for photoresist applications 有权
    用于光刻胶应用的低活化能溶解改性剂

    公开(公告)号:US20070231734A1

    公开(公告)日:2007-10-04

    申请号:US11239507

    申请日:2005-09-29

    IPC分类号: G03C1/00

    摘要: A photoresist composition including a polymer, a photo acid generator and a dissolution modification agent, a method of forming an image using the photoresist composition and the dissolution modification agent composition. The dissolution modification agent is insoluble in aqueous alkaline developer and inhibits dissolution of the polymer in the developer until acid is generated by the photoacid generator being exposed to actinic radiation, whereupon the dissolution modifying agent, at a suitable temperature, becomes soluble in the developer and allows the polymer to dissolve in the developer. The DMAs are glucosides, cholates, citrates and adamantanedicarboxylates protected with acid-labile ethoxyethyl, tetrahydrofuranyl, and angelicalactonyl groups.

    摘要翻译: 包含聚合物,光酸产生剂和溶解改性剂的光致抗蚀剂组合物,使用光致抗蚀剂组合物形成图像的方法和溶解改性剂组合物。 溶解改性剂不溶于含水碱性显影剂中,并且抑制聚合物在显影剂中的溶解,直至酸被光致酸性发生剂暴露于光化辐射为止,因此溶解改性剂在合适的温度下变得可溶于显影剂, 允许聚合物溶解在显影剂中。 DMA是用酸不稳定的乙氧基乙基,四氢呋喃基和天竺葵酰基保护的葡糖苷,胆酸盐,柠檬酸盐和金刚烷二羧酸盐。