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29 条记录 (耗时 0.023 秒)

    SEMICONDUCTOR DEVICE MANUFACTURING METHOD TO FORM RESIST PATTERN, AND SUBSTRATE PROCESSING APPARATUS
    6.
    发明申请
    SEMICONDUCTOR DEVICE MANUFACTURING METHOD TO FORM RESIST PATTERN, AND SUBSTRATE PROCESSING APPARATUS 审中-公开
    用于形成电阻图案的半导体器件制造方法和基板处理装置

    公开(公告)号：US20110229826A1

    公开(公告)日：2011-09-22

    申请号：US13118779

    申请日：2011-05-31

    申请人： Daisuke KAWAMURA ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

    发明人： Daisuke KAWAMURA ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70925 ,  G03F7/70341

    摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.

    摘要翻译： 本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。 在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的， 待处理衬底的端部。 在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为 最接近被处理衬底。 在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。

    Substrate processing method, substrate processing apparatus, and manufacturing method of semiconductor device
    8.
    发明申请
    Substrate processing method, substrate processing apparatus, and manufacturing method of semiconductor device 失效
    基板处理方法，基板处理装置以及半导体装置的制造方法

    公开(公告)号：US20070190462A1

    公开(公告)日：2007-08-16

    申请号：US11654565

    申请日：2007-01-18

    申请人： Eishi Shiobara ,  Kentaro Matsunaga ,  Daisuke Kawamura ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Shinichi Ito

    发明人： Eishi Shiobara ,  Kentaro Matsunaga ,  Daisuke Kawamura ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Shinichi Ito

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70341 ,  Y10S430/162

    摘要： A substrate processing method including while a liquid is supplied between a processing target substrate to be applied with exposure treatment and a projection optical system of an exposure apparatus for carrying out the exposure treatment, prior to providing a resist film on a first main face of the processing target substrate that is provided for liquid immersion exposure for carrying out the exposure treatment at a side to be applied with the exposure treatment, selectively applying at least hydrophobic treatment with respect to a region in a predetermined range from a peripheral rim part of a second main face opposite to the first main face.

    摘要翻译： 一种基板处理方法，包括在将待施加曝光处理的处理对象基板和用于进行曝光处理的曝光装置的投影光学系统之间提供液体之前，在将抗蚀剂膜提供在第一主面 为了进行曝光处理的一侧进行曝光处理而设置的液浸曝光处理对象基板，从第二图像的外围边缘部选择性地施加相对于规定范围的区域的至少疏水处理 主面与第一主面相对。

    Substrate processing method, substrate processing apparatus, and manufacturing method of semiconductor device
    9.
    发明授权
    Substrate processing method, substrate processing apparatus, and manufacturing method of semiconductor device 失效
    基板处理方法，基板处理装置以及半导体装置的制造方法

    公开(公告)号：US07794923B2

    公开(公告)日：2010-09-14

    申请号：US11654565

    申请日：2007-01-18

    申请人： Eishi Shiobara ,  Kentaro Matsunaga ,  Daisuke Kawamura ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Shinichi Ito

    发明人： Eishi Shiobara ,  Kentaro Matsunaga ,  Daisuke Kawamura ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Shinichi Ito

    IPC分类号： G03F7/00

    CPC分类号： G03F7/70341 ,  Y10S430/162

    摘要： A substrate processing method including while a liquid is supplied between a processing target substrate to be applied with exposure treatment and a projection optical system of an exposure apparatus for carrying out the exposure treatment, prior to providing a resist film on a first main face of the processing target substrate that is provided for liquid immersion exposure for carrying out the exposure treatment at a side to be applied with the exposure treatment, selectively applying at least hydrophobic treatment with respect to a region in a predetermined range from a peripheral rim part of a second main face opposite to the first main face.

    摘要翻译： 一种基板处理方法，包括在将待施加曝光处理的处理对象基板和用于进行曝光处理的曝光装置的投影光学系统之间提供液体之前，在将抗蚀剂膜提供在第一主面 为了进行曝光处理的一侧进行曝光处理而设置的液浸曝光处理对象基板，从第二图像的外围边缘部选择性地施加相对于规定范围的区域的至少疏水处理 主面与第一主面相对。

    Semiconductor device manufacturing method to form resist pattern
    10.
    发明授权
    Semiconductor device manufacturing method to form resist pattern 失效
    形成抗蚀剂图案的半导体器件制造方法

    公开(公告)号：US07968272B2

    公开(公告)日：2011-06-28

    申请号：US11600198

    申请日：2006-11-16

    申请人： Daisuke Kawamura ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

    发明人： Daisuke Kawamura ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

    IPC分类号： G03C5/04

    CPC分类号： G03F7/70925 ,  G03F7/70341

    摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.

    摘要翻译： 本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。 在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的， 待处理衬底的端部。 在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为 最接近被处理衬底。 在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。