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    Method for producing thin MEMS wafers
    1.
    发明授权
    Method for producing thin MEMS wafers 有权

    公开(公告)号：US10793430B2

    公开(公告)日：2020-10-06

    申请号：US16131455

    申请日：2018-09-14

    Applicant: Robert Bosch GmbH

    Inventor： Sebastien Loiseau ,  Arnim Hoechst ,  Bernhard Gehl ,  Eugene Moliere Tanguep Njiokep ,  Sandra Altmannshofer

    IPC: B81C1/00

    Abstract: A method for producing thin MEMS wafers including: (A) providing an SOI wafer having an upper silicon layer, a first SiO2 layer and a lower silicon layer, the first SiO2 layer being situated between the upper silicon layer and the lower silicon layer, (B) producing a second SiO2 layer on the upper silicon layer, (C) producing a MEMS structure on the second SiO2 layer, (D) introducing clearances into the lower silicon layer down to the first SiO2 layer, (E) etching the first SiO2 layer and thus removing the lower silicon layer.

    MEMS TRANSDUCER, IN PARTICULAR FOR INTERACTING WITH A FLUID
    4.
    发明申请
    MEMS TRANSDUCER, IN PARTICULAR FOR INTERACTING WITH A FLUID 有权

    公开(公告)号：US20240400378A1

    公开(公告)日：2024-12-05

    申请号：US18663172

    申请日：2024-05-14

    Applicant: Robert Bosch GmbH

    Inventor： Peter Engelhart ,  Bernhard Gehl ,  Christoph Schelling

    IPC: B81B3/00

    Abstract: A MEMS transducer interacting with a fluid. The MEMS transistor includes: a layer stack of at least three MEMS layer structures in a layer sequence, an active MEMS layer structure being formed between a lower MEMS layer structure and an upper MEMS layer structure; at least one lamella formed in the active MEMS layer structure and deflectable laterally for interacting with the fluid; and a drive device for deflecting the movable lamella in a lateral direction perpendicular to the layer sequence, with a lower and/or upper electrode structure, which is formed adjacent to the active MEMS layer structure on the lower and/or upper MEMS layer structure. For applying an electrical voltage to the upper and/or lower electrode structure, a through-connection of the upper or lower MEMS layer structure is provided, which is electrically conductively connected to a contact element formed in the active MEMS layer structure.

    Capacitive MEMS-sensor element having bond pads for the electrical contacting of the measuring capacitor electrodes
    10.
    发明授权
    Capacitive MEMS-sensor element having bond pads for the electrical contacting of the measuring capacitor electrodes 有权

    公开(公告)号：US09725300B2

    公开(公告)日：2017-08-08

    申请号：US15059630

    申请日：2016-03-03

    Applicant: Robert Bosch GmbH

    Inventor： Heiko Stahl ,  Arnim Hoechst ,  Bernhard Gehl ,  Rolf Scheben ,  Benedikt Stein

    IPC: H01L29/84 ,  B81B3/00

    CPC classification number: B81B3/0086 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/04

    Abstract: Measures for reducing parasitic capacitances in the layer structure of capacitive MEMS sensor elements, in which parasitic capacitances between bond pads for electrically contacting measuring capacitor electrodes and an electrically conductive layer lying underneath are reduced by these measures. The sensor structure having the measuring capacitor electrodes and bond pads of such MEMS components are in a layer structure on a semiconductor substrate. The carrier layer directly underneath the bond pad structure is uninterrupted in the bond pad region, and the layer structure includes at least one insulation layer by which at least one of the bond pads is electrically insulated from an electrically conductive layer lying underneath. At least one layer under the carrier layer is structured in the region of this bond pad, so that hollow spaces are situated in the layer structure underneath this bond pad, by which the parasitic capacitance between this bond pad and the conductive layer lying underneath is reduced. Alternatively/additionally, the material of the conductive layer in the region underneath this bond pad is replaced by electrically conductive material at least in the upper layer region, so that the insulation layer in the region of this bond pad is considerably thicker than outside the bond pad region.

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