利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

24 条记录 (耗时 0.03 秒)

    In situ formation of protective layer on silsesquioxane dielectric for dual damascene process
    1.
    发明授权
    In situ formation of protective layer on silsesquioxane dielectric for dual damascene process 有权
    在双镶嵌工艺中在倍半硅氧烷电介质上原位形成保护层

    公开(公告)号：US06348736B1

    公开(公告)日：2002-02-19

    申请号：US09429257

    申请日：1999-10-29

    申请人： Vincent J. McGahay ,  John P. Hummel ,  Joyce Liu ,  Rebecca Mih ,  Kamalesh Srivastava ,  Robert Cook ,  Stephen E. Greco

    发明人： Vincent J. McGahay ,  John P. Hummel ,  Joyce Liu ,  Rebecca Mih ,  Kamalesh Srivastava ,  Robert Cook ,  Stephen E. Greco

    IPC分类号： H01L2348

    CPC分类号： H01L21/76831 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/31144 ,  H01L21/3122 ,  H01L21/3124 ,  H01L21/76807

    摘要： Resist developers can attack some advanced dielectric materials such as silsesquioxane materials which can be used as an insulator between a surface of an integrated circuit chip and wiring layers formed on the surface of the dielectric material. A first protective layer is formed in situ on the dielectric material, such as by exposing the material to an oxygen-containing or flourine containing plasma. Also, by performing a resist stripping or etching process in which a reactant material is supplied externally or liberated from the dielectric material, an extremely thin surface protective covering of an intermediate material may be formed which is impervious to resist developers or any of a plurality of other materials which may damage the flowable oxide material. The first protective layer and the surface protective covering can be formed by essentially identical processes. A dual Damascene process for forming robust connections and vias to the chip can thus be made compatible with advanced dielectrics having particularly low dielectric constants to minimize conductor capacitance and support fast signal propagation and noise immunity even where conductors are closely spaced to each other.

    摘要翻译： 抗蚀剂显影剂可以攻击一些先进的介电材料，例如可以用作集成电路芯片的表面和形成在介电材料表面上的布线层之间的绝缘体的倍半硅氧烷材料。 在电介质材料上原位形成第一保护层，例如通过将材料暴露于含氧或含氟的等离子体中。 此外，通过进行抗蚀剂剥离或蚀刻工艺，其中将反应物材料从电介质材料外部供应或从电介质材料释放出来，可以形成非常薄的中间材料的表面保护覆盖层，其不能抵抗显影剂或多个 可能损坏可流动的氧化物材料的其他材料。 第一保护层和表面保护层可以通过基本相同的方法形成。 因此，与芯片形成牢固的连接和通孔的双镶嵌工艺可以与具有特别低介电常数的先进电介质相兼容，以最小化导体电容并支持快速的信号传播和抗噪声性，即使导体彼此间隔紧密。

    Interim oxidation of silsesquioxane dielectric for dual damascene process
    2.
    发明授权
    Interim oxidation of silsesquioxane dielectric for dual damascene process 有权
    双重镶嵌工艺的倍半硅氧烷电介质的中间氧化

    公开(公告)号：US06479884B2

    公开(公告)日：2002-11-12

    申请号：US09893786

    申请日：2001-06-29

    申请人： Robert Cook ,  Stephen E. Greco ,  John P. Hummel ,  Joyce Liu ,  Vincent J. McGahay ,  Rebecca Mih ,  Kamalesh Srivastava

    发明人： Robert Cook ,  Stephen E. Greco ,  John P. Hummel ,  Joyce Liu ,  Vincent J. McGahay ,  Rebecca Mih ,  Kamalesh Srivastava

    IPC分类号： H01L2358

    CPC分类号： H01L21/76808 ,  H01L2221/1063

    摘要： Resist developers can attack some advanced dielectric materials such as silsesquioxane materials which can be used as an insulator between a surface of an integrated circuit chip and wiring layers formed on the surface of the dielectric material. By performing a resist stripping or etching process in which a reactant material is supplied externally or liberated from the dielectric material, an extremely thin surface protective covering of an intermediate material may be formed which is impervious to resist developers or any of a plurality of other materials which may damage the flowable oxide material. A dual Damascene process for forming robust connections and vias to the chip can thus be made compatible with advanced dielectrics having particularly low dielectric constants to minimize conductor capacitance and support fast signal propagation and noise immunity even where conductors are closely spaced to each other.

    摘要翻译： 抗蚀剂显影剂可以攻击一些先进的介电材料，例如可以用作集成电路芯片的表面和形成在介电材料表面上的布线层之间的绝缘体的倍半硅氧烷材料。 通过进行抗蚀剂剥离或蚀刻工艺，其中将反应物材料从电介质材料外部供应或释放出来，可以形成非常薄的中间材料的表面保护覆盖层，其不能抵抗显影剂或多种其它材料 这可能会损坏可流动的氧化物材料。 因此，与芯片形成牢固的连接和通孔的双镶嵌工艺可以与具有特别低介电常数的先进电介质相兼容，以最小化导体电容并支持快速的信号传播和抗噪声性，即使导体彼此间隔紧密。

    Dual damascene flowable oxide insulation structure and metallic barrier
    4.
    发明授权
    Dual damascene flowable oxide insulation structure and metallic barrier 有权
    双镶嵌可流动氧化物绝缘结构和金属屏障

    公开(公告)号：US06727589B2

    公开(公告)日：2004-04-27

    申请号：US09725862

    申请日：2000-11-30

    申请人： Stephen E. Greco ,  John P. Hummel ,  Joyce Liu ,  Vincent J. McGahay ,  Rebecca Mih ,  Kamalesh Srivastava

    发明人： Stephen E. Greco ,  John P. Hummel ,  Joyce Liu ,  Vincent J. McGahay ,  Rebecca Mih ,  Kamalesh Srivastava

    IPC分类号： H01L2348

    CPC分类号： H01L21/76843 ,  H01L21/31116 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/7684

    摘要： A method and structure for protecting a flowable oxide insulator in a semiconductor by oxidizing sidewalls of the FOX insulator, optionally nitridizing the oxidized FOX sidewalls, and then covering all surfaces of a trough or plurality of troughs in the FOX insulator, including the sidewalls, with a conductive secondary protective layer. In a multiple layer damascene structure, the surface of the FOX insulator is also oxidized, an additional oxide layer is deposited thereon, and a nitride layer deposited on the oxide layer. Then steps are repeated to obtain a comparable damascene structure. The materials can vary and each damascene layer may be either a single damascene or a dual damascene layer.

    摘要翻译： 一种通过氧化FOX绝缘体的侧壁来保护半导体中的可流动的氧化物绝缘体的方法和结构，可选地将氧化的FOX侧壁氮化，然后覆盖包括侧壁在内的FOX绝缘体中的槽或多个槽的所有表面， 导电二级保护层。 在多层镶嵌结构中，FOX绝缘体的表面也被氧化，在其上沉积另外的氧化物层，并且沉积在氧化物层上的氮化物层。 然后重复步骤以获得可比较的镶嵌结构。 材料可以变化，并且每个镶嵌层可以是单镶嵌层或双镶嵌层。

    Dual damascene flowable oxide insulation structure and metallic barrier
    5.
    发明授权
    Dual damascene flowable oxide insulation structure and metallic barrier 失效
    双镶嵌可流动氧化物绝缘结构和金属屏障

    公开(公告)号：US06221780B1

    公开(公告)日：2001-04-24

    申请号：US09408351

    申请日：1999-09-29

    申请人： Stephen E. Greco ,  John P. Hummel ,  Joyce Liu ,  Vincent J. McGahay ,  Rebecca Mih ,  Kamalesh Srivastava

    发明人： Stephen E. Greco ,  John P. Hummel ,  Joyce Liu ,  Vincent J. McGahay ,  Rebecca Mih ,  Kamalesh Srivastava

    IPC分类号： H01L21311

    CPC分类号： H01L21/76843 ,  H01L21/31116 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/7684

    摘要： A method and structure for protecting a flowable oxide insulator in a semiconductor by oxidizing sidewalls of the FOX insulator, optionally nitridizing the oxidized FOX sidewalls, and then covering all surfaces of a trough or plurality of troughs in the FOX insulator, including the sidewalls, with a conductive secondary protective layer. In a multiple layer damascene structure, the surface of the FOX insulator is also oxidized, an additional oxide layer is deposited thereon, and a nitride layer deposited on the oxide layer. Then steps are repeated to obtain a comparable damascene structure. The materials can vary and each damascene layer may be either a single damascene or a dual damascene layer.

    摘要翻译： 一种通过氧化FOX绝缘体的侧壁来保护半导体中的可流动的氧化物绝缘体的方法和结构，可选地将氧化的FOX侧壁氮化，然后覆盖包括侧壁在内的FOX绝缘体中的槽或多个槽的所有表面， 导电二级保护层。 在多层镶嵌结构中，FOX绝缘体的表面也被氧化，在其上沉积另外的氧化物层，并且沉积在氧化物层上的氮化物层。 然后重复步骤以获得可比较的镶嵌结构。 材料可以变化，并且每个镶嵌层可以是单镶嵌层或双镶嵌层。

    Magnetic switching device
    7.
    发明授权
    Magnetic switching device 失效
    磁性开关装置

    公开(公告)号：US07097777B2

    公开(公告)日：2006-08-29

    申请号：US11070856

    申请日：2005-03-02

    申请人： Gregory Costrini ,  John P. Hummel ,  George Stojakovic ,  Kia-Seng Low

    发明人： Gregory Costrini ,  John P. Hummel ,  George Stojakovic ,  Kia-Seng Low

    IPC分类号： B44C1/22

    CPC分类号： G11C11/16 ,  B82Y25/00 ,  B82Y40/00 ,  H01F41/308 ,  H01L43/12

    摘要： A method of forming a magnetic switching device is provided. The method includes depositing a bilayer hardmask, which may comprise a first mask layer of titanium nitride with a second mask layer of tungsten formed thereon. A first lithography process is performed to pattern the second mask layer, and a second lithography process is performed to pattern the first mask layer. Thereafter, the magnetic tunnel junction stack may be patterned in accordance with the first mask layer. An etching process may be performed to further pattern the first mask layer in accordance with the second mask layer. An optional passivation layer may be formed over the first mask layer and the second mask layer.

    摘要翻译： 提供一种形成磁性开关装置的方法。 该方法包括沉积双层硬掩模，其可以包括氮化钛的第一掩模层和形成在其上的钨的第二掩模层。 执行第一光刻处理以对第二掩模层进行图案化，并且执行第二光刻处理以对第一掩模层进行图案化。 此后，根据第一掩模层可以对磁性隧道结堆叠进行构图。 可以执行蚀刻工艺以根据第二掩模层进一步图案化第一掩模层。 可以在第一掩模层和第二掩模层上形成可选的钝化层。

    Post metalization chem-mech polishing dielectric etch
    9.
    发明授权
    Post metalization chem-mech polishing dielectric etch 失效
    后金属化化学抛光电介质蚀刻

    公开(公告)号：US06551924B1

    公开(公告)日：2003-04-22

    申请号：US09432683

    申请日：1999-11-02

    申请人： Timothy J. Dalton ,  John P. Hummel

    发明人： Timothy J. Dalton ,  John P. Hummel

    IPC分类号： H01L214763

    CPC分类号： H01L21/76802 ,  H01L21/76807 ,  H01L21/76885

    摘要： A method for etching an insulating layer without damage to the conducting layer and associated liner layer within the insulating layer. A dielectric layer is deposited on a semiconductor substrate and then patterned. A liner layer and a conducting layer are then deposited within the patterned dielectric. A passivating layer is deposited on top of the conducting layer after the conducting layer has been planarized through chemical-mechanical polishing while simultaneously etching the dielectric layer through a process that does not damage the underlying conducting and liner layers. The insulating layer is preferably a dielectric such as silicon dioxide and the liner layer is tantalum, tantalum nitride or a combination of the two. The passivating layer preferably consists of carbon and fluorine bound up in various chemical forms. The conducting layer preferably consists of copper. Recipes for simultaneously forming the passivating layer and etching the dielectric layer, and for removing the passivating layer without damaging the underlying conducting and liner layers are provided.

    摘要翻译： 一种用于蚀刻绝缘层而不损坏绝缘层内的导电层和相关衬里层的方法。 介电层沉积在半导体衬底上，然后构图。 然后在图案化的电介质中沉积衬垫层和导电层。 在通过化学机械抛光平面化导电层之后，在导电层的顶部上沉积钝化层，同时通过不损坏下面的导电层和衬层的工艺同时蚀刻介电层。 绝缘层优选是诸如二氧化硅的电介质，并且衬垫层是钽，氮化钽或两者的组合。 钝化层优选由以各种化学形式结合的碳和氟组成。 导电层优选由铜组成。 提供了用于同时形成钝化层和蚀刻介电层以及用于去除钝化层而不损坏下面的导电层和衬层的配方。

    Formation of vertical devices by electroplating
    10.
    发明授权
    Formation of vertical devices by electroplating 有权
    通过电镀形成垂直装置

    公开(公告)号：US08247905B2

    公开(公告)日：2012-08-21

    申请号：US12538782

    申请日：2009-08-10

    申请人： Hariklia Deligianni ,  Qiang Huang ,  John P. Hummel ,  Lubomyr T. Romankiw ,  Mary B. Rothwell

    发明人： Hariklia Deligianni ,  Qiang Huang ,  John P. Hummel ,  Lubomyr T. Romankiw ,  Mary B. Rothwell

    IPC分类号： H01L29/40

    CPC分类号： H01L21/76879 ,  H01L21/2885 ,  Y10S205/925

    摘要： The present invention is related to a method for forming vertical conductive structures by electroplating. Specifically, a template structure is first formed, which includes a substrate, a discrete metal contact pad located on the substrate surface, an inter-level dielectric (ILD) layer over both the discrete metal contact pad and the substrate, and a metal via structure extending through the ILD layer onto the discrete metal contact pad. Next, a vertical via is formed in the template structure, which extends through the ILD layer onto the discrete metal contact pad. A vertical conductive structure is then formed in the vertical via by electroplating, which is conducted by applying an electroplating current to the discrete metal contact pad through the metal via structure. Preferably, the template structure comprises multiple discrete metal contact pads, multiple metal via structures, and multiple vertical vias for formation of multiple vertical conductive structures.

    摘要翻译： 本发明涉及通过电镀形成垂直导电结构的方法。 具体地，首先形成模板结构，其包括衬底，位于衬底表面上的离散金属接触焊盘，分立金属接触焊盘和衬底两者之间的级间电介质（ILD）层，以及金属通孔结构 延伸穿过ILD层到分立的金属接触垫上。 接下来，在模板结构中形成垂直通孔，其延伸穿过ILD层到分立的金属接触垫上。 然后通过电镀在垂直通孔中形成垂直导电结构，电镀通过通过金属通孔结构将电镀电流施加到离散的金属接触焊盘来进行。 优选地，模板结构包括多个分立的金属接触焊盘，多个金属通孔结构以及用于形成多个垂直导电结构的多个垂直通孔。