公开(公告)号：US07944055B2

公开(公告)日：2011-05-17

申请号：US12772451

申请日：2010-05-03

申请人： Robert D. Allen ,  Phillip J. Brock ,  Blake W. Davis ,  Wu-Song S. Huang ,  Qinghuang Lin ,  Alshakim Nelson ,  Sampath Purushothaman ,  Ratnam Sooriyakumaran

发明人： Robert D. Allen ,  Phillip J. Brock ,  Blake W. Davis ,  Wu-Song S. Huang ,  Qinghuang Lin ,  Alshakim Nelson ,  Sampath Purushothaman ,  Ratnam Sooriyakumaran

IPC分类号： H01L23/48

CPC分类号： H01L21/76808 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/0276 ,  H01L21/3122 ,  H01L21/76802 ,  H01L21/76835 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/24802 ,  H01L2924/00

摘要： The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured. The inventive method can be used to form dual-damascene interconnect structures as well as single-damascene interconnect structures.

摘要翻译： 本发明提供一种制造互连结构的方法，其中可图案化的低k材料替代了使用单独的光致抗蚀剂和电介质材料的需要。 具体地说，本发明涉及一种制备具有至少一个可图案化的低k电介质和至少一种无机抗反射涂层的单镶嵌和双镶嵌低k互连结构的简化方法。 通常，提供了一种方法，其包括在位于基底顶部的无机抗反射涂层的表面上提供至少一种可图案化的低k材料。 无机ARC是液体沉积的，并且包含具有至少一个单体单元的聚合物，该单体单元包括式M-R1，其中M是Si，Ge，B，Sn，Fe，Ta，Ti，Ni，Hf和La中的至少一种， R1是发色团。 在至少一个可模制的低k材料内形成至少一个互连图案，此后至少一个可图案化的低k材料固化。 本发明的方法可用于形成双镶嵌互连结构以及单镶嵌互连结构。

公开(公告)号：US20100207276A1

公开(公告)日：2010-08-19

申请号：US12772451

申请日：2010-05-03

申请人： Robert D. Allen ,  Phillip J. Brock ,  Blake W. Davis ,  Wu-Song S. Huang ,  Qinghuang Lin ,  Alshakim Nelson ,  Sampath Purushothaman ,  Ratnam Sooriyakumaran

发明人： Robert D. Allen ,  Phillip J. Brock ,  Blake W. Davis ,  Wu-Song S. Huang ,  Qinghuang Lin ,  Alshakim Nelson ,  Sampath Purushothaman ,  Ratnam Sooriyakumaran

IPC分类号： H01L23/522 ,  C09D5/00

CPC分类号： H01L21/76808 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/0276 ,  H01L21/3122 ,  H01L21/76802 ,  H01L21/76835 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/24802 ,  H01L2924/00

摘要： The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured. The inventive method can be used to form dual-damascene interconnect structures as well as single-damascene interconnect structures.

摘要翻译： 本发明提供一种制造互连结构的方法，其中可图案化的低k材料替代了使用单独的光致抗蚀剂和电介质材料的需要。 具体地说，本发明涉及一种制备具有至少一个可图案化的低k电介质和至少一种无机抗反射涂层的单镶嵌和双镶嵌低k互连结构的简化方法。 通常，提供了一种方法，其包括在位于基底顶部的无机抗反射涂层的表面上提供至少一种可图案化的低k材料。 无机ARC是液体沉积的，并且包含具有至少一个单体单元的聚合物，该单体单元包括式M-R1，其中M是Si，Ge，B，Sn，Fe，Ta，Ti，Ni，Hf和La中的至少一种， R1是发色团。 在至少一个可模制的低k材料内形成至少一个互连图案，此后至少一个可图案化的低k材料固化。 本发明的方法可用于形成双镶嵌互连结构以及单镶嵌互连结构。

公开(公告)号：US20090081418A1

公开(公告)日：2009-03-26

申请号：US11858615

申请日：2007-09-20

申请人： Robert D. Allen ,  Phillip J. Brock ,  Blake W. Davis ,  Wu-Song S. Huang ,  Qinghuang Lin ,  Alshakim Nelson ,  Sampath Purushothaman ,  Ratnam Sooriyakumaran

发明人： Robert D. Allen ,  Phillip J. Brock ,  Blake W. Davis ,  Wu-Song S. Huang ,  Qinghuang Lin ,  Alshakim Nelson ,  Sampath Purushothaman ,  Ratnam Sooriyakumaran

IPC分类号： B32B5/00 ,  G03F7/00

CPC分类号： H01L21/76808 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/0276 ,  H01L21/3122 ,  H01L21/76802 ,  H01L21/76835 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/24802 ,  H01L2924/00

摘要： The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured. The inventive method can be used to form dual-damascene interconnect structures as well as single-damascene interconnect structures.

摘要翻译： 本发明提供一种制造互连结构的方法，其中可图案化的低k材料替代了使用单独的光致抗蚀剂和电介质材料的需要。 具体地说，本发明涉及一种制备具有至少一个可图案化的低k电介质和至少一种无机抗反射涂层的单镶嵌和双镶嵌低k互连结构的简化方法。 通常，提供了一种方法，其包括在位于基底顶部的无机抗反射涂层的表面上提供至少一种可图案化的低k材料。 无机ARC是液体沉积的，并且包含具有至少一个单体单元的聚合物，该单体单元包括式M-R1，其中M是Si，Ge，B，Sn，Fe，Ta，Ti，Ni，Hf和La中的至少一种， R1是发色团。 在至少一个可模制的低k材料内形成至少一个互连图案，此后至少一个可图案化的低k材料固化。 本发明的方法可用于形成双镶嵌互连结构以及单镶嵌互连结构。

公开(公告)号：US07709370B2

公开(公告)日：2010-05-04

申请号：US11858615

申请日：2007-09-20

申请人： Robert D. Allen ,  Phillip J. Brock ,  Blake W. Davis ,  Wu-Song S. Huang ,  Qinghuang Lin ,  Alshakim Nelson ,  Sampath Purushothaman ,  Ratnam Sooriyakumaran

发明人： Robert D. Allen ,  Phillip J. Brock ,  Blake W. Davis ,  Wu-Song S. Huang ,  Qinghuang Lin ,  Alshakim Nelson ,  Sampath Purushothaman ,  Ratnam Sooriyakumaran

IPC分类号： H01L21/4763

CPC分类号： H01L21/76808 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/0276 ,  H01L21/3122 ,  H01L21/76802 ,  H01L21/76835 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/24802 ,  H01L2924/00

摘要： The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured. The inventive method can be used to form dual-damascene interconnect structures as well as single-damascene interconnect structures.

摘要翻译： 本发明提供一种制造互连结构的方法，其中可图案化的低k材料替代了使用单独的光致抗蚀剂和电介质材料的需要。 具体地说，本发明涉及一种制备具有至少一个可图案化的低k电介质和至少一种无机抗反射涂层的单镶嵌和双镶嵌低k互连结构的简化方法。 通常，提供了一种方法，其包括在位于基底顶部的无机抗反射涂层的表面上提供至少一种可图案化的低k材料。 无机ARC是液体沉积的，并且包含具有至少一个单体单元的聚合物，该单体单元包括式M-R1，其中M是Si，Ge，B，Sn，Fe，Ta，Ti，Ni，Hf和La中的至少一种， R1是发色团。 在至少一个可模制的低k材料内形成至少一个互连图案，此后至少一个可图案化的低k材料固化。 本发明的方法可用于形成双镶嵌互连结构以及单镶嵌互连结构。

公开(公告)号：US07919225B2

公开(公告)日：2011-04-05

申请号：US12126287

申请日：2008-05-23

申请人： Robert D. Allen ,  Phillip Joe Brock ,  Blake W. Davis ,  Geraud Jean-Michel Dubois ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Sampath Purushothaman ,  Ratnam Sooriyakumaran

发明人： Robert D. Allen ,  Phillip Joe Brock ,  Blake W. Davis ,  Geraud Jean-Michel Dubois ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Sampath Purushothaman ,  Ratnam Sooriyakumaran

IPC分类号： G03F7/038 ,  G03F7/075 ,  G03F7/20 ,  G03F7/30 ,  G03F7/40

CPC分类号： G03F7/0757 ,  C08L83/14 ,  G03F7/0758 ,  G03F7/38 ,  G03F7/40 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/126 ,  C08L83/00

摘要： A method and a composition. The composition includes at least one carbosilane-substituted silsesquioxane polymer which crosslinks in the presence of an acid. The at least one carbosilane-substituted silsesquioxane polymer is soluble in aqueous base. The method includes forming a coating on a substrate. The coating includes one or more carbosilane-substituted silsesquioxane polymers. The carbosilane-substituted silsesquioxane polymer is soluble in aqueous base. The coating is exposed to radiation, resulting in generating a latent pattern in the coating. The exposed coating is baked at a first temperature less than about 150° C. The baked coating is developed, resulting in forming a latent image from the latent pattern in the baked coating. The latent image is cured at a second temperature less than about 500° C.

摘要翻译： 方法和组成。 该组合物包括在酸存在下交联的至少一种碳硅烷取代的倍半硅氧烷聚合物。 所述至少一种碳硅烷取代的倍半硅氧烷聚合物可溶于碱水溶液。 该方法包括在基底上形成涂层。 涂层包括一种或多种碳硅烷取代的倍半硅氧烷聚合物。 碳硅烷取代的倍半硅氧烷聚合物可溶于碱水溶液。 涂层暴露于辐射，导致在涂层中产生潜在图案。 暴露的涂层在小于约150℃的第一温度下烘烤。烘烤的涂层被显影，从而在烘烤涂层中从潜在图案形成潜像。 潜像在低于约500℃的第二温度下固化

公开(公告)号：US20090291389A1

公开(公告)日：2009-11-26

申请号：US12126287

申请日：2008-05-23

申请人： Robert D. Allen ,  Phillip Joe Brock ,  Blake W. Davis ,  Geraud Jean-Michel Dubois ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Sampath Purushothaman ,  Ratnam Sooriyakumaran

发明人： Robert D. Allen ,  Phillip Joe Brock ,  Blake W. Davis ,  Geraud Jean-Michel Dubois ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Sampath Purushothaman ,  Ratnam Sooriyakumaran

IPC分类号： G03F7/075 ,  C08G77/12 ,  G03F7/20

CPC分类号： G03F7/0757 ,  C08L83/14 ,  G03F7/0758 ,  G03F7/38 ,  G03F7/40 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/126 ,  C08L83/00

摘要： A method and a composition. The composition includes at least one carbosilane-substituted silsesquioxane polymer which crosslinks in the presence of an acid. The at least one carbosilane-substituted silsesquioxane polymer is soluble in aqueous base. The method includes forming a coating on a substrate. The coating includes one or more carbosilane-substituted silsesquioxane polymers. The carbosilane-substituted silsesquioxane polymer is soluble in aqueous base. The coating is exposed to radiation, resulting in generating a latent pattern in the coating. The exposed coating is baked at a first temperature less than about 150° C. The baked coating is developed, resulting in forming a latent image from the latent pattern in the baked coating. The latent image is cured at a second temperature less than about 500° C.

摘要翻译： 方法和组成。 该组合物包括在酸存在下交联的至少一种碳硅烷取代的倍半硅氧烷聚合物。 所述至少一种碳硅烷取代的倍半硅氧烷聚合物可溶于碱水溶液。 该方法包括在基底上形成涂层。 涂层包括一种或多种碳硅烷取代的倍半硅氧烷聚合物。 碳硅烷取代的倍半硅氧烷聚合物可溶于碱水溶液。 涂层暴露于辐射，导致在涂层中产生潜在图案。 暴露的涂层在小于约150℃的第一温度下烘烤。烘烤的涂层被显影，从而在烘烤涂层中从潜在图案形成潜像。 潜像在低于约500℃的第二温度下固化

公开(公告)号：US08029971B2

公开(公告)日：2011-10-04

申请号：US12047435

申请日：2008-03-13

申请人： Robert D. Allen ,  Phillip Joe Brock ,  Blake W. Davis ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Ratnam Sooriyakumaran

发明人： Robert D. Allen ,  Phillip Joe Brock ,  Blake W. Davis ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Ratnam Sooriyakumaran

IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/40 ,  G03F7/38

CPC分类号： G03F7/0757 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/40 ,  Y10S430/106 ,  Y10S430/115 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/126

摘要： Compositions, a method, and a photopatternable blend. The compositions include a blend of a first and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a substituted silsesquioxane polymer. The second polymer is configured to undergo chemical crosslinking with the first polymer, the second polymer, or a combination thereof, upon exposure to light, thermal energy, or a combination thereof. The compositions include a photosensitive acid generator. The method includes forming a film. The film is patternwise imaged, and at least one region is exposed to radiation. After the imaging, the film is baked, wherein at least one exposed region is rendered substantially soluble. After the baking, the film is developed, wherein a relief pattern remains. The relief pattern is exposed to radiation. The relief pattern is baked. The relief pattern is cured. A chemically amplified positive-tone photopatternable blend is also described.

摘要翻译： 组合，一种方法和一种光图案化混合物。 组合物包括第一和第二聚合物的共混物。 第一聚合物是取代的倍半硅氧烷共聚物。 第二聚合物是取代的倍半硅氧烷聚合物。 第二聚合物被配置为在暴露于光，热能或其组合时与第一聚合物，第二聚合物或其组合进行化学交联。 组合物包括光敏酸产生剂。 该方法包括形成膜。 膜被图案化成像，并且至少一个区域暴露于辐射。 在成像之后，烘烤该膜，其中至少一个曝光区域呈现基本上可溶的。 烘烤后，显影膜，其中保留有浮雕图案。 浮雕图案暴露于辐射。 浮雕图案被烘烤。 浮雕图案被修复。 还描述了化学放大的正色调可光图案化混合物。

公开(公告)号：US20080286467A1

公开(公告)日：2008-11-20

申请号：US11750356

申请日：2007-05-18

申请人： Robert D. Allen ,  Phillip Brock ,  Blake W. Davis ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Ratnam Sooriyakumaran

发明人： Robert D. Allen ,  Phillip Brock ,  Blake W. Davis ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Ratnam Sooriyakumaran

IPC分类号： B05D1/32 ,  C04B41/50

CPC分类号： H01L21/3122 ,  G03F7/0382 ,  G03F7/0757 ,  G03F7/40 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/12 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/126

摘要： A method. The method includes dip coating a film of a composition on a silicon wafer substrate. The composition includes a polymer blend of a first polymer and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a polysilsesquioxane having silanol end groups. The composition includes a photosensitive acid generator, an organic base, and an organic crosslinking agent. The film is patternwise imaged and at least one region is exposed to radiation having a wavelength of about 248 nanometers. The film is baked, resulting in inducing crosslinking in the film. The film is developed resulting in removal of base-soluble unexposed regions of the film, wherein a relief pattern from the film remains. The relief pattern is cured at a temperature between about 300° C. and about 450° C., and the curing utilizes a combination of thermal treatment with UV radiation.

摘要翻译： 一个方法。 该方法包括在硅晶片衬底上浸涂组合物的膜。 该组合物包括第一聚合物和第二聚合物的聚合物共混物。 第一聚合物是取代的倍半硅氧烷共聚物。 第二聚合物是具有硅烷醇端基的聚倍半硅氧烷。 该组合物包括光敏酸产生剂，有机碱和有机交联剂。 膜被图案化成像，并且至少一个区域暴露于波长为约248纳米的辐射。 该膜被烘烤，导致膜中引起交联。 显影该膜，导致去除基底溶解的膜的未曝光区域，其中残留有膜的浮雕图案。 浮雕图案在约300℃和约450℃之间的温度下固化，并且固化利用与UV辐射的热处理的组合。

公开(公告)号：US07867689B2

公开(公告)日：2011-01-11

申请号：US11750356

申请日：2007-05-18

申请人： Robert D. Allen ,  Phillip Brock ,  Blake W. Davis ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Ratnam Sooriyakumaran

发明人： Robert D. Allen ,  Phillip Brock ,  Blake W. Davis ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Ratnam Sooriyakumaran

IPC分类号： G03F7/038 ,  G03F7/075 ,  G03F7/20 ,  G03F7/30 ,  G03F7/40

CPC分类号： H01L21/3122 ,  G03F7/0382 ,  G03F7/0757 ,  G03F7/40 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/12 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/126

摘要： A method. The method includes dip coating a film of a composition on a silicon wafer substrate. The composition includes a polymer blend of a first polymer and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a polysilsesquioxane having silanol end groups. The composition includes a photosensitive acid generator, an organic base, and an organic crosslinking agent. The film is patternwise imaged and at least one region is exposed to radiation having a wavelength of about 248 nanometers. The film is baked, resulting in inducing crosslinking in the film. The film is developed resulting in removal of base-soluble unexposed regions of the film, wherein a relief pattern from the film remains. The relief pattern is cured at a temperature between about 300° C. and about 450° C., and the curing utilizes a combination of thermal treatment with UV radiation.

摘要翻译： 一个方法。 该方法包括在硅晶片衬底上浸涂组合物的膜。 该组合物包括第一聚合物和第二聚合物的聚合物共混物。 第一聚合物是取代的倍半硅氧烷共聚物。 第二聚合物是具有硅烷醇端基的聚倍半硅氧烷。 该组合物包括光敏酸产生剂，有机碱和有机交联剂。 膜被图案化成像，并且至少一个区域暴露于波长为约248纳米的辐射。 该膜被烘烤，导致膜中引起交联。 显影该膜，导致去除基底溶解的膜的未曝光区域，其中残留有膜的浮雕图案。 浮雕图案在约300℃和约450℃之间的温度下固化，并且固化利用与UV辐射的热处理的组合。

公开(公告)号：US20090233226A1

公开(公告)日：2009-09-17

申请号：US12047435

申请日：2008-03-13

申请人： Robert D. Allen ,  Phillip Joe Brock ,  Blake W. Davis ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Ratnam Sooriyakumaran

发明人： Robert D. Allen ,  Phillip Joe Brock ,  Blake W. Davis ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Ratnam Sooriyakumaran

IPC分类号： G03F7/004 ,  G03F7/20

CPC分类号： G03F7/0757 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/40 ,  Y10S430/106 ,  Y10S430/115 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/126

摘要： Compositions, a method, and a photopatternable blend. The compositions include a blend of a first and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a substituted silsesquioxane polymer. The second polymer is configured to undergo chemical crosslinking with the first polymer, the second polymer, or a combination thereof, upon exposure to light, thermal energy, or a combination thereof. The compositions include a photosensitive acid generator. The method includes forming a film. The film is patternwise imaged, and at least one region is exposed to radiation. After the imaging, the film is baked, wherein at least one exposed region is rendered substantially soluble. After the baking, the film is developed, wherein a relief pattern remains. The relief pattern is exposed to radiation. The relief pattern is baked. The relief pattern is cured. A chemically amplified positive-tone photopatternable blend is also described.

摘要翻译： 组合，一种方法和一种光图案化混合物。 组合物包括第一和第二聚合物的共混物。 第一聚合物是取代的倍半硅氧烷共聚物。 第二聚合物是取代的倍半硅氧烷聚合物。 第二聚合物被配置为在暴露于光，热能或其组合时与第一聚合物，第二聚合物或其组合进行化学交联。 组合物包括光敏酸产生剂。 该方法包括形成膜。 膜被图案化成像，并且至少一个区域暴露于辐射。 在成像之后，烘烤该膜，其中至少一个曝光区域呈现基本上可溶的。 烘烤后，显影膜，其中保留有浮雕图案。 浮雕图案暴露于辐射。 浮雕图案被烘烤。 浮雕图案被修复。 还描述了化学放大的正色调可光图案化混合物。