公开(公告)号：US5272042A

公开(公告)日：1993-12-21

申请号：US761183

申请日：1991-09-17

申请人： Robert D. Allen ,  William R. Brunsvold ,  Burton J. Carpenter ,  William D. Hinsberg ,  Joseph LaTorre ,  Michael G. McMaster ,  Melvin W. Montgomery ,  Wayne M. Moreau ,  Logan L. Simpson ,  Robert J. Tweig ,  Gregory M. Wallraff

发明人： Robert D. Allen ,  William R. Brunsvold ,  Burton J. Carpenter ,  William D. Hinsberg ,  Joseph LaTorre ,  Michael G. McMaster ,  Melvin W. Montgomery ,  Wayne M. Moreau ,  Logan L. Simpson ,  Robert J. Tweig ,  Gregory M. Wallraff

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027 ,  H01L21/30 ,  G03C1/73

CPC分类号： G03F7/039 ,  Y10S430/111 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/126 ,  Y10S430/127

摘要： Disclosed is a positive photoresist. The photoresist has as its polymeric component a substantially water and base insoluble, photolabile polymer. The photoresist further includes a photo acid generator that is capable of forming a strong acid. This photo acid generator may be a sulfonate ester derived from a N-hydroxyamide, or a N-hydroxyimide. Finally, the photoresist composition includes an appropriate photosensitizer.

摘要翻译： 公开了一种正性光致抗蚀剂。 光致抗蚀剂具有基本上水和碱不溶性的光不稳定聚合物作为其聚合物组分。 光致抗蚀剂还包括能够形成强酸的光酸产生剂。 该光酸产生剂可以是衍生自N-羟基酰胺或N-羟基酰亚胺的磺酸酯。 最后，光致抗蚀剂组合物包括适当的光敏剂。

公开(公告)号：US5023164A

公开(公告)日：1991-06-11

申请号：US425531

申请日：1989-10-23

申请人： William R. Brunsvold ,  Philip Chiu ,  Willard E. Conley, Jr. ,  Dale M. Crockatt ,  Melvin W. Montgomery ,  Wayne M. Moreau

发明人： William R. Brunsvold ,  Philip Chiu ,  Willard E. Conley, Jr. ,  Dale M. Crockatt ,  Melvin W. Montgomery ,  Wayne M. Moreau

IPC分类号： C08G8/00 ,  C08G8/10 ,  G03F7/039 ,  G03F7/38 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F7/039

摘要： Highly sensitive, highly absorbing deep ultraviolet and vacuum ultraviolet resists which comprise a novolak resin protected with an acid labile group and a photoinitiator which generates a strong acid upon exposure to deep ultraviolet or vacuum ultraviolet radiation. The exposed resists are reacted with organometallic compounds to form reactive ion etch resistant patterns.

公开(公告)号：US5164278A

公开(公告)日：1992-11-17

申请号：US487348

申请日：1990-03-01

申请人： William R. Brunsvold ,  Christopher J. Knors ,  Melvin W. Montgomery ,  Wayne M. Moreau ,  Kevin M. Welsh

发明人： William R. Brunsvold ,  Christopher J. Knors ,  Melvin W. Montgomery ,  Wayne M. Moreau ,  Kevin M. Welsh

IPC分类号： G03F7/004 ,  G03F7/029 ,  G03F7/039 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F7/039 ,  Y10S430/115 ,  Y10S430/119

摘要： Acid sensitized photoresists with enhanced photospeed are provided. The photoresist compositions include a polymer binder and/or a polymerizable compound and an acid sensitive group which enables patterning of the resist composition, and acid generating photoinitiator, and an hydroxy aromatic compound which enhances the speed of the resist composition under imaging radiation.

公开(公告)号：US5338818A

公开(公告)日：1994-08-16

申请号：US943086

申请日：1992-09-10

申请人： William R. Brunsvold ,  Premlatha Jagannathan ,  Steve S. Miura ,  Melvin W. Montgomery ,  Harbans S. Sachdev ,  Ratnam Sooriyakumaran

发明人： William R. Brunsvold ,  Premlatha Jagannathan ,  Steve S. Miura ,  Melvin W. Montgomery ,  Harbans S. Sachdev ,  Ratnam Sooriyakumaran

IPC分类号： C08G77/38 ,  C08G77/04 ,  C08G77/16 ,  C08G77/18 ,  C08L83/04 ,  C08L83/06 ,  G03F7/039 ,  G03F7/075 ,  C08G77/00

CPC分类号： G03F7/0757 ,  C08G77/04 ,  C08G77/16 ,  C08G77/18

摘要： A method of synthesizing a silicon-containing positive resist for use as a imaging layer in DUV, x-ray, or e-beam lithography is disclosed. The resist contains arylsilsesquioxane polymers with acid sensitive pendant groups as dissolution inhibitors and a photoacid generator.

摘要翻译： 公开了一种在DUV，X射线或电子束光刻中合成用作成像层的含硅正性抗蚀剂的方法。 抗蚀剂含有具有酸敏性侧基作为溶解抑制剂的芳基倍半硅氧烷聚合物和光酸产生剂。

公开(公告)号：US6057080A

公开(公告)日：2000-05-02

申请号：US987073

申请日：1997-12-09

申请人： William R. Brunsvold ,  George J. Hefferon ,  Christopher F. Lyons ,  Wayne M. Moreau ,  Robert L. Wood

发明人： William R. Brunsvold ,  George J. Hefferon ,  Christopher F. Lyons ,  Wayne M. Moreau ,  Robert L. Wood

IPC分类号： G03F7/11 ,  C08L27/12 ,  G03F7/00 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F7/091 ,  G03F7/092

摘要： Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antireflective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.

摘要翻译： 水性可显影光致抗蚀剂组合物的图案转印的增强的保真度是通过含氟的顶部抗反射涂层实现的，其折射率近似等于下面的光致抗蚀剂的平方根，并且可在光致抗蚀剂的显影剂中除去。

公开(公告)号：US5744537A

公开(公告)日：1998-04-28

申请号：US863678

申请日：1997-05-27

申请人： William R. Brunsvold ,  George J. Hefferon ,  Christopher F. Lyons ,  Wayne M. Moreau ,  Robert L. Wood

发明人： William R. Brunsvold ,  George J. Hefferon ,  Christopher F. Lyons ,  Wayne M. Moreau ,  Robert L. Wood

IPC分类号： G03F7/11 ,  C08L27/12 ,  G03F7/00 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F7/091 ,  G03F7/092 ,  Y10T428/3154

摘要： Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antirefective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.

摘要翻译： 水性可显影光致抗蚀剂组合物的图案转印的增强的保真度是通过含氟的顶部抗有效涂层实现的，其折射率近似等于下面光致抗蚀剂的平方根，并且可在光致抗蚀剂的显影剂中除去。

公开(公告)号：US06818381B2

公开(公告)日：2004-11-16

申请号：US10026184

申请日：2001-12-21

申请人： Mahmoud M. Khojasteh ,  Timothy M. Hughes ,  Ranee W. Kwong ,  Pushkara Rao Varanasi ,  William R. Brunsvold ,  Margaret C. Lawson ,  Robert D. Allen ,  David R. Medeiros ,  Ratnam Sooriyakumaran ,  Phillip Brock

发明人： Mahmoud M. Khojasteh ,  Timothy M. Hughes ,  Ranee W. Kwong ,  Pushkara Rao Varanasi ,  William R. Brunsvold ,  Margaret C. Lawson ,  Robert D. Allen ,  David R. Medeiros ,  Ratnam Sooriyakumaran ,  Phillip Brock

IPC分类号： G03F711

CPC分类号： G03F7/094 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0395 ,  G03F7/0758 ,  G11B5/3163

摘要： Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.

摘要翻译： 适用于形成用于多层平版印刷工艺的平坦化底层的组合物的特征在于（A）含有（i）环醚部分，（ii）饱和多环部分和（iii）不需要单独交联剂的组合物的芳族部分的聚合物 ，或（B）含有：（i）饱和多环部分的聚合物，和（ii）需要单独交联剂的组合物的芳族部分。 该组合物提供优异的光学，机械和蚀刻选择性。 组合物在使用波长小于200nm的辐射的光刻工艺中特别有用，以配置下层材料层。

公开(公告)号：US06927015B2

公开(公告)日：2005-08-09

申请号：US10920762

申请日：2004-08-18

申请人： Mahmoud M. Khojasteh ,  Timothy M. Hughes ,  Ranee W. Kwong ,  Pushkara Rao Varanasi ,  William R. Brunsvold ,  Margaret C. Lawson ,  Robert D. Allen ,  David R. Medeiros ,  Ratnam Sooriyakumaran ,  Phillip Brock

发明人： Mahmoud M. Khojasteh ,  Timothy M. Hughes ,  Ranee W. Kwong ,  Pushkara Rao Varanasi ,  William R. Brunsvold ,  Margaret C. Lawson ,  Robert D. Allen ,  David R. Medeiros ,  Ratnam Sooriyakumaran ,  Phillip Brock

IPC分类号： C08F30/08 ,  C08F32/00 ,  C08F230/08 ,  C08K5/41 ,  C08K5/54 ,  C08L43/04 ,  C08L45/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/09 ,  G11B5/31 ,  H01L21/027 ,  G03F7/40 ,  G03F7/11

CPC分类号： G03F7/094 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0395 ,  G03F7/0758 ,  G11B5/3163

摘要： Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.

摘要翻译： 适用于形成用于多层平版印刷工艺的平坦化底层的组合物的特征在于（A）含有（i）环醚部分，（ii）饱和多环部分和（iii）不需要单独交联剂的组合物的芳族部分的聚合物 ，或（B）含有：（i）饱和多环部分的聚合物，和（ii）需要单独交联剂的组合物的芳族部分。 该组合物提供优异的光学，机械和蚀刻选择性。 组合物在使用波长小于200nm的辐射的光刻工艺中特别有用，以配置下层材料层。

公开(公告)号：US5609989A

公开(公告)日：1997-03-11

申请号：US466568

申请日：1995-06-06

申请人： Nageshwer R. Bantu ,  William R. Brunsvold ,  George J. Hefferon ,  Wu-Song Huang ,  Ahmad D. Katnani ,  Mahmoud M. Khojasteh ,  Ratnam Sooriyakumaran ,  Dominic C. Yang

发明人： Nageshwer R. Bantu ,  William R. Brunsvold ,  George J. Hefferon ,  Wu-Song Huang ,  Ahmad D. Katnani ,  Mahmoud M. Khojasteh ,  Ratnam Sooriyakumaran ,  Dominic C. Yang

IPC分类号： G03F7/004 ,  G03F7/039

CPC分类号： G03F7/039 ,  G03F7/0045

摘要： Proton sponge, berberine, and cetyltrimethyl ammonium hydroxide base compounds are used as additives to chemically amplified photoresists based on modified polyhydroxystyrene (PHS). The base additives scavenge free acids from the photoresist in order to preserve the acid labile moieties on the modified PHS polymer. The base additives are well suited to industrial processing conditions, do not react with the photoacid compounds in the photoresist composition to form byproducts which would hinder photoresist performance, and extend the shelf-life of the photoresist composition. In addition, the proton sponge and berberine base additives have a different absorption spectra than the modified PHS polymer, therefore, the quantity of base additive within the photoresist can be easily assayed and controlled.

公开(公告)号：US4939070A

公开(公告)日：1990-07-03

申请号：US215966

申请日：1988-07-07

申请人： William R. Brunsvold ,  Ming-Fea Chow ,  Willard E. Conley ,  Dale M. Crockatt ,  Jean M. J. Frechet ,  George J. Hefferon ,  Hiroshi Ito ,  Nancy E. Iwamoto ,  Carlton G. Willson

发明人： William R. Brunsvold ,  Ming-Fea Chow ,  Willard E. Conley ,  Dale M. Crockatt ,  Jean M. J. Frechet ,  George J. Hefferon ,  Hiroshi Ito ,  Nancy E. Iwamoto ,  Carlton G. Willson

IPC分类号： G03F7/039

CPC分类号： G03F7/039 ,  Y10S430/143 ,  Y10S430/168

摘要： The present invention discloses particular lithographic polymeric materials and methods of using these materials, wherein the polymeric materials have acid labile or photolabile groups pendant to the polymer backbone. The polymeric materials are sufficiently transparent to deep UV radiation to permit deep UV imaging, can be used to produce resist structures having thermal stability at temperatures greater than about 160.degree. C., and are sufficiently resistant to excessive crosslinking when heated to temperatures ranging from about 160.degree. C. to about 250.degree. C. that they remain soluble in common lithographic developers and strippers.The present invention also discloses resists comprising substituted polyvinyl benzoates which, after imaging, exhibit unexpectedly high thermal stability, in terms of plastic flow. These resists cannot be imaged using deep UV because they exhibit such a high degree of opacity below 280 nm; however, they are useful as the top, imaging layer in a bilayer resist process wherein the top layer acts as a mask during deep UV exposure of the bottom layer.

摘要翻译： 本发明公开了特定的平版印刷聚合物材料和使用这些材料的方法，其中聚合物材料具有垂直于聚合物主链的酸不稳定性或光不稳定性基团。 聚合物材料对于深紫外线辐射具有足够的透明度以允许深紫外成像，可用于生产在大于约160℃的温度下具有热稳定性的抗蚀剂结构，并且当加热至约 160℃至约250℃，它们仍溶于普通的平版印刷显影剂和剥离剂。 本发明还公开了包含取代的聚乙烯基苯甲酸酯的抗蚀剂，其在成像之后，在塑性流动方面表现出意想不到的高热稳定性。 这些抗蚀剂不能使用深紫外成像，因为它们在280nm以下表现出如此高的不透明度; 然而，它们可用作双层抗蚀剂工艺中的顶部成像层，其中顶层在底层的深紫外线曝光期间用作掩模。