摘要:
A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl(CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.
摘要:
A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.
摘要:
A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula: where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.
摘要:
Photoresist additive polymers and photoresist formulations that can be used in immersion lithography without the use of an additional topcoat. The resist compositions include a photoresist polymer, at least one photoacid generator, a solvent; and a photoresist additive polymer. Also a method of forming using photoresist formulations including photoresist additive polymers.
摘要:
Photoresist additive polymers and photoresist formulations that can be used in immersion lithography without the use of an additional topcoat. The resist compositions include a photoresist polymer, at least one photoacid generator, a solvent; and a photoresist additive polymer. Also a method of forming using photoresist formulations including photoresist additive polymers.
摘要:
Compositions comprising photobleachable organic materials can be bleached by 193 nm light, and brought back to their original state by stimuli after exposure. (reversible photobleaching). We use these compositions in art-known contrast enhancement layers and as a part of a photoresist, especially in optical lithography processes for semiconductor fabrication. They may comprise polymers such as organo-silicon polymers, polymers comprising polymers of aromatic hydroxyl compounds such as phenol and naphthol such as phenol formaldehyde polymers and naphthol formaldehyde polymers styrene polymers and phenolic acrylate polymers or cyclic materials comprising: where the radicals “R” and “Y” represent organo, or substituted organo moieties, Structures I, II, and III represent basic organic skeletons and can be unsubstituted or substituted in any available position with any one or combinations of multiple substituents.
摘要:
The present invention relates to a radiation-sensitive resist composition comprising (a) a radiation-sensitive acid generator, (b) a substituted androstane, and (c) a copolymer binder. The copolymer binder comprises (meth)acrylic/(meth)acrylate copolymer.
摘要:
Compositions comprising photobleachable organic materials can be bleached by 193 nm light, and brought back to their original state by stimuli after exposure. (reversible photobleaching). We use these compositions in art-known contrast enhancement layers and as a part of a photoresist, especially in optical lithography processes for semiconductor fabrication. They may comprise polymers such as organosilicon polymers, polymers comprising polymers of aromatic hydroxyl compounds such as phenol and naphthol such as phenol formaldehyde polymers and naphthol formaldehyde polymers styrene polymers and phenolic acrylate polymers or cyclic materials comprising: where the radicals “R” and “Y” represent organo, or substituted organo moieties, Structures I, II, and III represent basic organic skeletons and can be unsubstituted or substituted in any available position with any one or combinations of multiple substituents.
摘要:
Lithographic imaging of 50 nm (or less) half-pitch features in chemically amplified resists (commonly used in the manufacture of integrated circuits) is enabled by the use of reduced temperature post-exposure processing and low activation energy chemically amplified resists. The post-exposure processing preferably involves ambient to moderately elevated temperature and the presence of a deprotection reaction-dependent co-reactant (e.g., water).