Method for patterning a low activation energy photoresist
    5.
    发明授权
    Method for patterning a low activation energy photoresist 有权
    图案化低活化能光致抗蚀剂的方法

    公开(公告)号:US07820369B2

    公开(公告)日:2010-10-26

    申请号:US10729452

    申请日:2003-12-04

    IPC分类号: G03F7/30

    摘要: Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C. by acid-catalyzed deprotection of pendent acetal- or ketal-protected carboxylic acid groups.

    摘要翻译: 提供了含有缩醛或缩酮键的聚合物及其在平版光刻胶组合物中的用途,特别是在化学放大光致抗蚀剂中。 聚合物由至少一种含有缩醛或缩酮键的第一烯属单体制备,其酸催化裂解使聚合物可溶于碱水溶液; 和至少一种第二烯烃单体,其选自(i)含有侧氟化羟烷基RH的烯烃单体,(ii)含有侧氟化烷基磺酰胺基RS的烯烃单体,和(iii)其组合。 缩醛或缩酮键可以包含在第一烯属单体中的酸可裂解取代基RCL中。 还提供了一种使用含有这些聚合物的光致抗蚀剂组合物来制备图案化基材的方法,其中聚合物在低于约100℃的温度下可溶于碱水溶液,通过酸催化的侧链缩醛或缩酮脱保护 保护的羧酸基团。

    Low activation energy photoresists
    8.
    发明授权
    Low activation energy photoresists 有权
    低活化能光刻胶

    公开(公告)号:US07193023B2

    公开(公告)日:2007-03-20

    申请号:US10729169

    申请日:2003-12-04

    IPC分类号: C08F112/68

    CPC分类号: G03F7/0046 G03F7/0397

    摘要: Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C. by acid-catalyzed deprotection of pendent acetal- or ketal-protected carboxylic acid groups.

    摘要翻译: 提供了含有缩醛或缩酮键的聚合物及其在平版光刻胶组合物中的用途,特别是在化学放大光致抗蚀剂中。 聚合物由至少一种含有缩醛或缩酮键的第一烯属单体制备,其酸催化裂解使聚合物可溶于碱水溶液; 和至少一种第二烯烃单体,其选自(i)含有侧氟化羟烷基R H的烯烃单体,(ii)含有侧氟化烷基磺酰胺基R S的烯属单体, SUP),和(iii)其组合。 缩醛或缩酮键可以包含在第一烯烃单体中的酸可裂解取代基R CL中。 还提供了一种使用含有这些聚合物的光致抗蚀剂组合物来制备图案化基材的方法,其中聚合物在低于约100℃的温度下可溶于碱水溶液,通过酸催化的侧链缩醛或缩酮脱保护 保护的羧酸基团。

    Photoresist composition
    10.
    发明授权
    Photoresist composition 失效
    光刻胶组成

    公开(公告)号:US07014980B2

    公开(公告)日:2006-03-21

    申请号:US10916934

    申请日:2004-08-12

    摘要: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl(CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.

    摘要翻译: 提供了一种光致抗蚀剂组合物,其包括具有至少一个具有下式的丙烯酸酯或甲基丙烯酸酯单体的聚合物,其中R 1表示氢(H),1至20个碳的直链或支链烷基或 1至20个碳的半或全氟化直链或支链烷基; 其中R 2表示未取代的脂族基团或具有与取代的脂族基团的每个碳上连接的具有0或1个三氟甲基(CF 3 N 3)基团的取代的脂族基团,或 取代或未取代的芳基; 其中R 3表示氢(H),甲基(CH 3),三氟甲基(CF 3),二氟甲基(CHF 2) (CH 2 CO 2),或半或全氟化脂族链; 并且其中R 4表示三氟甲基(CF 3 S),二氟甲基(CH 2)2,氟甲基(CH 2 CH 2) )或半或全氟取代或未取代的脂族基团。 本文还提供了使用光致抗蚀剂组合物图案化衬底的方法。