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    Molecular photoresists containing nonpolymeric silsesquioxanes
    1.
    发明授权
    Molecular photoresists containing nonpolymeric silsesquioxanes 有权
    含有非聚合倍半硅氧烷的分子光刻胶

    公开(公告)号：US07141692B2

    公开(公告)日：2006-11-28

    申请号：US10721302

    申请日：2003-11-24

    申请人： Robert David Allen ,  Wu-Song Huang ,  Mahmoud Khojasteh ,  Qinghuang Lin ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran ,  Hoa D. Truong

    发明人： Robert David Allen ,  Wu-Song Huang ,  Mahmoud Khojasteh ,  Qinghuang Lin ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran ,  Hoa D. Truong

    IPC分类号： C08G77/14

    CPC分类号： C07F7/21 ,  G03F7/0045 ,  G03F7/0755 ,  Y10S430/106 ,  Y10S430/127 ,  Y10T428/31663

    摘要： A nonpolymeric silsesquioxane is provided wherein at least one silicon atom of the silsesquioxane is directly or indirectly bound to an acid-cleavable substituent RCL. The silsesquioxane has a glass transition temperature Tg of greater than 50° C., and the RCL substituent can be cleaved from the silsesquioxane at a temperature below Tg, generally at least 5° C. below Tg. The remainder of the silicon atoms within the silsesquioxane structure may be bound to additional acid-cleavable groups, acid-inert polar groups RP, and/or acid-inert nonpolar groups RNP. The nonpolymeric silsesquioxane can be a polyhedral silsesquioxane optionally having one to three open vertices, such that the polyhedron appears to be a “partial cage” structure, or a macromer of two to four such polyhedral silsesquioxanes. Photoresist compositions containing the novel nonpolymeric silsesquioxanes are also provided, as is a method for using the compositions in preparing a patterned substrate.

    摘要翻译： 提供了一种非聚合倍半硅氧烷，其中倍半硅氧烷的至少一个硅原子直接或间接地结合到酸可裂解的取代基R CL上。 倍半硅氧烷的玻璃化转变温度T 大于50℃，R CL取代基可以在低于T℃的温度下从倍半硅氧烷中裂解， 通常在T g以下至少5℃。 倍半硅氧烷结构中的剩余硅原子可以与另外的酸可裂解基团，酸惰性极性基团R和P和/或酸惰性非极性基团R SUP>。 非聚合倍半硅氧烷可以是任选具有一至三个开放顶点的多面体倍半硅氧烷，使得多面体看起来是“部分笼”结构，或两至四个这样的多面体倍半硅氧烷的大分子单体。 还提供了含有新型非聚合倍半硅氧烷的光致抗蚀剂组合物，以及在制备图案化基材时使用该组合物的方法。

    Molecular photoresists containing nonpolymeric silsesquioxanes
    2.
    发明申请
    Molecular photoresists containing nonpolymeric silsesquioxanes 有权
    含有非聚合倍半硅氧烷的分子光刻胶

    公开(公告)号：US20050112382A1

    公开(公告)日：2005-05-26

    申请号：US10721302

    申请日：2003-11-24

    申请人： Robert Allen ,  Wu-Song Huang ,  Mahmoud Khojasteh ,  Qinghuang Lin ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran ,  Hoa Truong

    发明人： Robert Allen ,  Wu-Song Huang ,  Mahmoud Khojasteh ,  Qinghuang Lin ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran ,  Hoa Truong

    IPC分类号： B32B25/20 ,  C07F7/21 ,  G03F7/004 ,  G03F7/075

    CPC分类号： C07F7/21 ,  G03F7/0045 ,  G03F7/0755 ,  Y10S430/106 ,  Y10S430/127 ,  Y10T428/31663

    摘要： A nonpolymeric silsesquioxane is provided wherein at least one silicon atom of the silsesquioxane is directly or indirectly bound to an acid-cleavable substituent RCL. The silsesquioxane has a glass transition temperature Tg of greater than 50° C, and the RCL substituent can be cleaved from the silsesquioxane at a temperature below Tg, generally at least 5° C. below Tg. The remainder of the silicon atoms within the silsesquioxane structure may be bound to additional acid-cleavable groups, acid-inert polar groups RP, and/or acid-inert nonpolar groups RNP. The nonpolymeric silsesquioxane can be a polyhedral silsesquioxane optionally having one to three open vertices, such that the polyhedron appears to be a “partial cage” structure, or a macromer of two to four such polyhedral silsesquioxanes. Photoresist compositions containing the novel nonpolymeric silsesquioxanes are also provided, as is a method for using the compositions in preparing a patterned substrate.

    摘要翻译： 提供了一种非聚合倍半硅氧烷，其中倍半硅氧烷的至少一个硅原子直接或间接地结合到酸可裂解的取代基R CL上。 倍半硅氧烷的玻璃化转变温度T 大于50℃，R CL取代基可以在低于T T的温度下从倍半硅氧烷中裂解 通常在T T以下至少5℃。 倍半硅氧烷结构中的剩余硅原子可以与另外的酸可裂解基团，酸惰性极性基团R和P和/或酸惰性非极性基团R SUP>。 非聚合倍半硅氧烷可以是任选具有一至三个开放顶点的多面体倍半硅氧烷，使得多面体看起来是“部分笼”结构，或两至四个这样的多面体倍半硅氧烷的大分子单体。 还提供了含有新型非聚合倍半硅氧烷的光致抗蚀剂组合物，以及在制备图案化基材时使用该组合物的方法。

    Interconnect structure and method of fabricating
    4.
    发明授权
    Interconnect structure and method of fabricating 有权
    互连结构和制造方法

    公开(公告)号：US08334203B2

    公开(公告)日：2012-12-18

    申请号：US12814162

    申请日：2010-06-11

    申请人： Qinghuang Lin ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran

    发明人： Qinghuang Lin ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran

    IPC分类号： H01L21/4763

    CPC分类号： H01L23/5329 ,  G03F7/0035 ,  G03F7/40 ,  H01L21/02123 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/743 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L23/53295 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： An interconnect structure is provided which comprises a semiconductor substrate; a patterned and cured photoresist wherein the photoresist contains a low k dielectric substitutent and contains a fortification layer on its top and sidewall surfaces forming vias or trenches; and a conductive fill material in the vias or trenches. Also provided is a method for fabricating an interconnect structure which comprises depositing a photoresist onto a semiconductor substrate, wherein the photoresist contains a low k dielectric constituent; imagewise exposing the photoresist to actinic radiation; then forming a pattern of vias or trenches in the photoresist; surface fortifying the pattern of vias or trenches proving a fortification layer on the top and sidewalls of the vias or trenches; curing the pattern of vias or trenches thereby converting the photoresist into a dielectric; and filling the vias and trenches with a conductive fill material.

    摘要翻译： 提供一种互连结构，其包括半导体衬底; 图案化和固化的光致抗蚀剂，其中光致抗蚀剂含有低k电介质替代物，并且在其顶部和侧壁表面上包含形成通孔或沟槽的强化层; 以及通孔或沟槽中的导电填充材料。 还提供了一种用于制造互连结构的方法，其包括在半导体衬底上沉积光致抗蚀剂，其中光致抗蚀剂含有低k电介质成分; 将光刻胶成像曝光于光化辐射; 然后在光致抗蚀剂中形成通孔或沟槽的图案; 表面强化通孔或沟槽的图案，证明通孔或沟槽的顶部和侧壁上的强化层; 固化通孔或沟槽的图案，从而将光致抗蚀剂转化为电介质; 并用导电填充材料填充通孔和沟槽。

    INTERCONNECT STRUCTURE AND METHOD OF FABRICATING
    5.
    发明申请
    INTERCONNECT STRUCTURE AND METHOD OF FABRICATING 有权
    互连结构和制作方法

    公开(公告)号：US20130009323A1

    公开(公告)日：2013-01-10

    申请号：US13613890

    申请日：2012-09-13

    申请人： Qinghuang Lin ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran

    发明人： Qinghuang Lin ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran

    IPC分类号： H01L23/48

    CPC分类号： H01L23/5329 ,  G03F7/0035 ,  G03F7/40 ,  H01L21/02123 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/743 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L23/53295 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： An interconnect structure is provided which comprises a semiconductor substrate; a patterned and cured photoresist wherein the photoresist contains a low k dielectric substitutent and contains a fortification layer on its top and sidewall surfaces forming vias or trenches; and a conductive fill material in the vias or trenches. Also provided is a method for fabricating an interconnect structure which comprises depositing a photoresist onto a semiconductor substrate, wherein the photoresist contains a low k dielectric constituent; imagewise exposing the photoresist to actinic radiation; then forming a pattern of vias or trenches in the photoresist; surface fortifying the pattern of vias or trenches proving a fortification layer on the top and sidewalls of the vias or trenches; curing the pattern of vias or trenches thereby converting the photoresist into a dielectric; and filling the vias and trenches with a conductive fill material.

    摘要翻译： 提供一种互连结构，其包括半导体衬底; 图案化和固化的光致抗蚀剂，其中光致抗蚀剂含有低k电介质替代物，并且在其顶部和侧壁表面上包含形成通孔或沟槽的强化层; 以及通孔或沟槽中的导电填充材料。 还提供了一种用于制造互连结构的方法，其包括在半导体衬底上沉积光致抗蚀剂，其中光致抗蚀剂含有低k电介质成分; 将光刻胶成像曝光于光化辐射; 然后在光致抗蚀剂中形成通孔或沟槽的图案; 表面强化通孔或沟槽的图案，证明通孔或沟槽的顶部和侧壁上的强化层; 固化通孔或沟槽的图案，从而将光致抗蚀剂转化为电介质; 并用导电填充材料填充通孔和沟槽。

    INTERCONNECT STRUCTURE AND METHOD OF FABRICATING
    6.
    发明申请
    INTERCONNECT STRUCTURE AND METHOD OF FABRICATING 有权
    互连结构和制作方法

    公开(公告)号：US20110304053A1

    公开(公告)日：2011-12-15

    申请号：US12814162

    申请日：2010-06-11

    申请人： Qinghuang Lin ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran

    发明人： Qinghuang Lin ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran

    IPC分类号： H01L23/522 ,  H01L21/60

    CPC分类号： H01L23/5329 ,  G03F7/0035 ,  G03F7/40 ,  H01L21/02123 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/743 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L23/53295 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： An interconnect structure is provided which comprises a semiconductor substrate; a patterned and cured photoresist wherein the photoresist contains a low k dielectric substitutent and contains a fortification layer on its top and sidewall surfaces forming vias or trenches; and a conductive fill material in the vias or trenches. Also provided is a method for fabricating an interconnect structure which comprises depositing a photoresist onto a semiconductor substrate, wherein the photoresist contains a low k dielectric constituent; imagewise exposing the photoresist to actinic radiation; then forming a pattern of vias or trenches in the photoresist; surface fortifying the pattern of vias or trenches proving a fortification layer on the top and sidewalls of the vias or trenches; curing the pattern of vias or trenches thereby converting the photoresist into a dielectric; and filling the vias and trenches with a conductive fill material.

    摘要翻译： 提供一种互连结构，其包括半导体衬底; 图案化和固化的光致抗蚀剂，其中光致抗蚀剂含有低k电介质替代物，并且在其顶部和侧壁表面上包含形成通孔或沟槽的强化层; 以及通孔或沟槽中的导电填充材料。 还提供了一种用于制造互连结构的方法，其包括在半导体衬底上沉积光致抗蚀剂，其中光致抗蚀剂含有低k电介质成分; 将光刻胶成像曝光于光化辐射; 然后在光致抗蚀剂中形成通孔或沟槽的图案; 表面强化通孔或沟槽的图案，证明通孔或沟槽的顶部和侧壁上的强化层; 固化通孔或沟槽的图案，从而将光致抗蚀剂转化为电介质; 并用导电填充材料填充通孔和沟槽。