利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

26 条记录 (耗时 0.026 秒)

    Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures
    6.
    发明授权
    Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures 失效
    用于减少碳化硅外延生长和所得碳化硅结构中的微管形成的方法

    公开(公告)号：US5679153A

    公开(公告)日：1997-10-21

    申请号：US346618

    申请日：1994-11-30

    申请人： Vladimir A. Dmitriev ,  Svetlana V. Rendakova ,  Vladimir A. Ivantsov ,  Calvin H. Carter, Jr.

    发明人： Vladimir A. Dmitriev ,  Svetlana V. Rendakova ,  Vladimir A. Ivantsov ,  Calvin H. Carter, Jr.

    IPC分类号： C30B19/02 ,  C30B19/04 ,  C30B29/36 ,  H01L21/205 ,  H01L21/208

    CPC分类号： C30B19/04 ,  C30B29/36 ,  Y10S438/931

    摘要： A method is disclosed for producing epitaxial layers of silicon carbide that are substantially free of micropipe defects. The method comprises growing an epitaxial layer of silicon carbide on a silicon carbide substrate by liquid phase epitaxy from a melt of silicon carbide in silicon and an element that enhances the solubility of silicon carbide in the melt. The atomic percentage of that element predominates over the atomic percentage of silicon in the melt. Micropipe defects propagated by the substrate into the epitaxial layer are closed by continuing to grow the epitaxial layer under the proper conditions until the epitaxial layer has a thickness at which micropipe defects present in the substrate are substantially no longer reproduced in the epitaxial layer, and the number of micropipe defects in the epitaxial layer is substantially reduced.

    摘要翻译： 公开了一种用于生产基本上没有微孔缺陷的碳化硅外延层的方法。 该方法包括通过从硅中的碳化硅熔体液相外延生长碳化硅衬底上的外延层，以及提高碳化硅在熔体中的溶解度的元素。 该元素的原子百分比优于熔体中硅的原子百分比。 通过在适当的条件下继续生长外延层直到外延层具有在外延层中基本上不再再现衬底中的微管缺陷的厚度，使由衬底传播到外延层中的微管缺陷闭合，并且 外延层中的微管缺陷的数量显着减少。

    Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product
    9.
    发明授权
    Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product 失效
    用于消除碳化硅外延层和所得产品中的残余氮污染的装置

    公开(公告)号：US5119540A

    公开(公告)日：1992-06-09

    申请号：US558196

    申请日：1990-07-24

    申请人： Hua-Shuang Kong ,  Thomas G. Coleman ,  Calvin H. Carter, Jr.

    发明人： Hua-Shuang Kong ,  Thomas G. Coleman ,  Calvin H. Carter, Jr.

    IPC分类号： C30B25/02 ,  C30B25/12

    CPC分类号： C30B25/12 ,  C30B25/02 ,  C30B29/36 ,  Y10T428/131

    摘要： The invention is a method, and associated apparatus and product, of forming extremely pure epitaxial layers of silicon carbide by reducing the carrier concentration of residual nitrogen in silicon carbide formed by chemical vapor deposition processes. The method comprises placing a substrate upon which an epitaxial layer of silicon carbide will form upon a susceptor, and in which the susceptor is formed of a material that will not generate undesired nitrogen-containing out gases at the temperatures at which chemical vapor deposition of silicon carbide will take place from appropriate source gases. The substrate is heated to a temperature at which chemical vapor deposition of silicon carbide will take place from appropriate source gases by inductively heating the susceptor using an induction frequency that heats the susceptor material. Silicon-containing and carbon-containing source gases are then introduced that will form an epitaxial layer of silicon carbide upon the heated substrate.

    摘要翻译： 本发明是通过降低通过化学气相沉积工艺形成的碳化硅中的残留氮的载流子浓度，形成极其纯的碳化硅外延层的方法和相关的装置和产品。 该方法包括放置一个衬底，碳化硅外延层将在其上形成在感受体上，并且其中感受体由在硅化学气相沉积的温度下不会产生不需要的含氮气体的材料形成 碳化物将从适当的源气体发生。 将衬底加热到​​通过使用加热感受体材料的感应频率感应加热感受器从适当的源气体发生碳化硅的化学气相沉积的温度。 然后引入含硅和含碳源气体，其将在加热的基底上形成碳化硅的外延层。

    Semi-insulating silicon carbide without vanadium domination
    10.
    发明授权
    Semi-insulating silicon carbide without vanadium domination 有权
    半绝缘碳化硅无钒支配

    公开(公告)号：US06403982B2

    公开(公告)日：2002-06-11

    申请号：US09757950

    申请日：2001-01-10

    申请人： Calvin H. Carter, Jr. ,  Mark Brady ,  Valeri F. Tsvetkov

    发明人： Calvin H. Carter, Jr. ,  Mark Brady ,  Valeri F. Tsvetkov

    IPC分类号： H01L310312

    CPC分类号： C30B23/00 ,  C30B29/36 ,  C30B33/00

    摘要： A semi-insulating bulk single crystal of silicon carbide is disclosed that has a resistivity of at least 5000 &OHgr;-cm at room temperature and a concentration of deep level trapping elements that is below the amounts that will affect the resistivity of the crystal, preferably below detectable levels. A method of forming the crystal is also disclosed, along with some resulting devices that take advantage of the microwave frequency capabilities of devices formed using substrates according to the invention.

    摘要翻译： 公开了一种半绝缘体碳化硅单晶，其在室温下的电阻率至少为5000欧姆 - 厘米，深层捕集元素的浓度低于将影响晶体电阻率的量，优选低于 可检测水平。 还公开了形成晶体的方法，以及利用根据本发明的基板形成的器件的微波频率能力的一些所得到的器件。