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    Very low dielectric constant plasma-enhanced CVD films
    1.
    发明授权
    Very low dielectric constant plasma-enhanced CVD films 有权
    非常低的介电常数等离子体增强CVD膜

    公开(公告)号：US07399697B2

    公开(公告)日：2008-07-15

    申请号：US11001755

    申请日：2004-12-02

    申请人： Robert P. Mandal

    发明人： Robert P. Mandal

    IPC分类号： H01L21/4763 ,  H01L21/31

    CPC分类号： C23C16/401 ,  C23C16/402 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31695 ,  Y10T428/249969 ,  Y10T428/249976 ,  Y10T428/249978 ,  Y10T428/249994

    摘要： The present invention provides a method for depositing nano-porous low dielectric constant films by reacting a mixture comprising an oxidizable silicon component and an oxidizable component having thermally labile groups with an oxidizing gas in gas-phase plasma-enhanced reaction. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a low-density structure. The nano-porous silicon oxide based films are useful for forming layers between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures.

    摘要翻译： 本发明提供了一种通过在气相等离子体增强反应中使包含可氧化硅组分和具有热不稳定基团的可氧化组分的混合物与氧化气体反应来沉积纳米多孔低介电常数薄膜的方法。 将沉积的氧化硅基膜退火以形成残留在具有低密度结构的纳米多孔氧化硅基膜中的分散的微观空隙。 纳米多孔氧化硅基膜可用于在具有或不具有衬层或盖层的金属线之间形成层。 纳米多孔氧化硅基膜也可以用作制造双镶嵌结构的金属间介电层。

    Very low dielectric constant plasma-enhanced CVD films
    2.
    发明授权
    Very low dielectric constant plasma-enhanced CVD films 有权

    公开(公告)号：US07094710B2

    公开(公告)日：2006-08-22

    申请号：US11001761

    申请日：2004-12-02

    申请人： Robert P. Mandal

    发明人： Robert P. Mandal

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： C23C16/401 ,  C23C16/402 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31695 ,  Y10T428/249969 ,  Y10T428/249976 ,  Y10T428/249978 ,  Y10T428/249994

    摘要： The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liable groups with nitrous oxide, oxygen, ozone, or other source of reactive oxygen in gas-phase plasma-enhanced reaction. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a low-density structure. The nano-porous silicon oxide based films are useful for forming layers between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures. Preferred nano-porous silicon oxide based films are produced by reaction of methylsilyl-1,4-dioxinyl ether or methylsiloxanyl furan and 2,4,6-trisilaoxane or cyclo-1,3,5,7-tetrasilylene-2,6-dioxy-4,8 dimethylene with nitrous oxide or oxygen followed by a cure/anneal that includes a gradual increase in temperature.

    Ionic additives for extreme low dielectric constant chemical formulations
    3.
    发明授权
    Ionic additives for extreme low dielectric constant chemical formulations 失效
    用于极低介电常数化学配方的离子添加剂

    公开(公告)号：US06896955B2

    公开(公告)日：2005-05-24

    申请号：US10219164

    申请日：2002-08-13

    申请人： Robert P. Mandal ,  Alexandros T. Demos ,  Timothy Weidman ,  Michael P. Nault ,  Nikolaos Bekiaris ,  Scott J. Weigel ,  Lee A. Senecal ,  James E. MacDougal ,  Hareesh Thridandam

    发明人： Robert P. Mandal ,  Alexandros T. Demos ,  Timothy Weidman ,  Michael P. Nault ,  Nikolaos Bekiaris ,  Scott J. Weigel ,  Lee A. Senecal ,  James E. MacDougal ,  Hareesh Thridandam

    IPC分类号： B05D5/12 ,  B05D7/24 ,  C01B33/16 ,  C09D5/25 ,  C09D183/02 ,  H01L21/20 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  B32B3/00

    CPC分类号： H01L21/02126 ,  C01B33/16 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695 ,  Y10S438/96 ,  Y10T428/249953 ,  Y10T428/249969

    摘要： A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution. In some embodiments, the ionic additive is a compound chosen from a group of cationic additives of the general composition [NR(CH3)3]+A−, where R is a hydrophobic ligand of chain length 1 to 24, including tetramethylammonium and cetyltrimethylammonium, and A− is an anion, which may be chosen from the group consisting essentially of formate, nitrate, oxalate, acetate, phosphate, carbonate, and hydroxide and combinations thereof. Tetramethylammonium salts, or more generally tetraalkylammonium salts, or tetraorganoammonium salts or organoamines in acidic media are added to surfactant templated porous oxide precursor formulations to increase the ionic content, replacing alkali ion impurities (sodium and potassium) removed during surfactant purification, but which are found to exhibit beneficial effects in promoting the formation of the resulting dielectric.

    摘要翻译： 一种使用溶胶 - 凝胶方法沉积多孔氧化硅基膜的方法，该方法使用前体溶液制剂，其包含纯化的非离子表面活性剂和其它组分中的添加剂，其中添加剂是形成离子的离子添加剂或胺添加剂 铵型盐在酸性前体溶液中。 使用这种前体溶液制剂可以形成介电常数小于2.5，适当的机械性能和最低水平的碱金属杂质的薄膜。 在一个实施方案中，这通过纯化表面活性剂并将离子或胺添加剂例如四烷基铵盐和胺添加到原料前体溶液中来实现。 在一些实施方案中，离子添加剂是选自一般组成的阳离子添加剂组合物[NR（CH 3）3） 其中R是链长1至24的疏水性配体，包括四甲基铵和十六烷基三甲基铵，并且A是一种阴离子，其可以选自下组： 基本上由甲酸盐，硝酸盐，草酸盐，乙酸盐，磷酸盐，碳酸盐和氢氧化物组成。 在表面活性剂模板化的多孔氧化物前体制剂中加入四甲基铵盐或更一般的四烷基铵盐或四官能铵盐或有机胺，以增加离子含量，代替在表面活性剂纯化过程中除去的碱离子杂质（钠和钾），但发现 以促进所形成的电介质的形成。

    Method of uniformly coating a substrate
    6.
    发明授权
    Method of uniformly coating a substrate 有权
    均匀涂布基材的方法

    公开(公告)号：US06238735B1

    公开(公告)日：2001-05-29

    申请号：US09391964

    申请日：1999-09-08

    申请人： Robert P. Mandal ,  James C. Grambow ,  Ted C. Dettes ,  Donald R. Sauer ,  Emir Gurer ,  Edmond R. Ward

    发明人： Robert P. Mandal ,  James C. Grambow ,  Ted C. Dettes ,  Donald R. Sauer ,  Emir Gurer ,  Edmond R. Ward

    IPC分类号： B05D312

    CPC分类号： H01L21/6715 ,  B05D1/005 ,  B05D3/0486

    摘要： A method of and an apparatus for coating a substrate with a polymer solution to produce a film of uniform thickness, includes mounting the substrate inside an enclosed housing and passing a control gas, which may be a solvent vapor-bearing gas into the housing through an inlet. The polymer solution is deposited onto the surface of the substrate in the housing and the substrate is then spun. The control gas and any solvent vapor and particulate contaminants suspended in the control gas are exhausted from the housing through an outlet and the solvent vapor concentration is controlled by controlling the temperature of the housing and the solvent from which the solvent vapor-bearing gas is produced. Instead the concentration can be controlled by mixing gases having different solvent concentrations. The humidity of the gas may also be controlled.

    摘要翻译： 一种用聚合物溶液涂覆基材以产生均匀厚度的膜的方法和装置，包括将基板安装在封闭的壳体内，并将控制气体（其可以是溶剂蒸气承载气体）通过一个 进口。 聚合物溶液沉积在壳体中的基底表面上，然后旋转基底。 控制气体和悬浮在控制气体中的任何溶剂蒸汽和颗粒污染物通过出口从壳体排出，并且通过控制壳体的温度和产生溶剂蒸气的气体的溶剂来控制溶剂蒸汽浓度 。 而是可以通过混合具有不同溶剂浓度的气体来控制浓度。 也可以控制气体的湿度。