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    GaN-based devices using (Ga, AL, In)N base layers
    1.
    发明授权
    GaN-based devices using (Ga, AL, In)N base layers 失效
    使用（Ga，AL，In）N基层的GaN基器件

    公开(公告)号：US6156581A

    公开(公告)日：2000-12-05

    申请号：US984473

    申请日：1997-12-03

    申请人： Robert P. Vaudo ,  Joan M. Redwing ,  Michael A. Tischler ,  Duncan W. Brown

    发明人： Robert P. Vaudo ,  Joan M. Redwing ,  Michael A. Tischler ,  Duncan W. Brown

    IPC分类号： C30B33/00 ,  H01L21/205 ,  H01L33/00

    CPC分类号： C30B33/00 ,  B82Y15/00 ,  C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  C30B29/36 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02439 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  Y10S117/915 ,  Y10T428/13 ,  Y10T428/21

    摘要： A method of forming a (gallium, aluminum, indium) nitride base layer on a substrate for subsequent fabrication, e.g., by MOCVD or MBE, of a microelectronic device structure thereon. Vapor-phase (Ga, Al, In) chloride is reacted with a vapor-phase nitrogenous compound in the presence of the substrate, to form (Ga, Al, In) nitride. The (Ga, Al, In) nitride base layer is grown on the substrate by HVPE, to yield a microelectronic device base comprising a substrate with the (Ga, Al, In) nitride base layer thereon. The product of such HVPE process comprises a device quality, single crystal crack-free base layer of (Ga, Al, In) N on the substrate, in which the thickness of the base layer may, for example, be on the order of 2 microns and greater and the defect density of the base layer may, for example, be on the order of 1E8 cm.sup.-2 or lower. Microelectronic devices thereby may be formed on the base layer, over a substrate of a foreign (poor lattice match) material, such as sapphire. Devices which may be fabricated utilizing the HVPE base layer of the invention include light emitting diodes, detectors, transistors, and semiconductor lasers.

    摘要翻译： 在衬底上形成（镓，铝，铟）氮化物基底层的方法，用于例如通过MOCVD或MBE制造其上的微电子器件结构。 在衬底存在下，使气相（Ga，Al，In）与气相含氮化合物反应，形成（Ga，Al，In）氮化物。 （Ga，Al，In）氮化物基层通过HVPE在衬底上生长，得到包含其上具有（Ga，Al，In）氮化物基底层的衬底的微电子器件基底。 这种HVPE工艺的产物包括在衬底上的（Ga，Al，In）N的器件质量，单晶无裂纹基底层，其中基底层的厚度可以例如为2 微米和更大，并且基底层的缺陷密度可以例如为1E8cm-2或更低的数量级。 因此，微电子器件可以形成在基底层上，在诸如蓝宝石的外来（差的晶格匹配）材料的衬底上。 可以使用本发明的HVPE基层制造的器件包括发光二极管，检测器，晶体管和半导体激光器。

    GaN-based devices using thick (Ga, Al, In)N base layers
    2.
    发明授权
    GaN-based devices using thick (Ga, Al, In)N base layers 有权
    使用厚（Ga，Al，In）N基层的GaN基器件

    公开(公告)号：US06533874B1

    公开(公告)日：2003-03-18

    申请号：US09656595

    申请日：2000-09-07

    申请人： Robert P. Vaudo ,  Joan M. Redwing ,  Michael A. Tischler ,  Duncan W. Brown ,  Jeffrey S. Flynn

    发明人： Robert P. Vaudo ,  Joan M. Redwing ,  Michael A. Tischler ,  Duncan W. Brown ,  Jeffrey S. Flynn

    IPC分类号： H01L2906

    CPC分类号： B82Y15/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02439 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079

    摘要： A method of forming a (gallium, aluminum, indium) nitride base layer on a substrate for subsequent fabrication, e.g., by MOCVD or MBE, of a microelectronic device structure thereon. Vapor-phase (Ga, Al, In) chloride is reacted with a vapor-phase nitrogenous compound in the presence of the substrate, to form (Ga, Al, In) nitride. The (Ga, Al, In) nitride base layer is grown on the substrate by HVPE, to yield a microelectronic device base comprising a substrate with the (Ga, Al, In) nitride base layer thereon. The product of such HVPE process comprises a device quality, single crystal crack-free base layer of (Ga, Al, In) N on the substrate, in which the thickness of the base layer may, for example, be on the order of 2 microns and greater and the defect density of the base layer may, for example, be on the order of 1E8 cm−2 or lower. Microelectronic devices thereby may be formed on the base layer, over a substrate of a foreign (poor lattice match) material, such as sapphire. Devices which may be fabricated utilizing the HVPE base layer of the invention include light emitting diodes, detectors, transistors, and semiconductor lasers.

    摘要翻译： 在衬底上形成（镓，铝，铟）氮化物基底层的方法，用于例如通过MOCVD或MBE制造其上的微电子器件结构。 在衬底存在下，使气相（Ga，Al，In）与气相含氮化合物反应，形成（Ga，Al，In）氮化物。 （Ga，Al，In）氮化物基层通过HVPE在衬底上生长，得到包含其上具有（Ga，Al，In）氮化物基底层的衬底的微电子器件基底。 这种HVPE工艺的产物包括在衬底上的（Ga，Al，In）N的器件质量，单晶无裂纹基底层，其中基底层的厚度可以例如为2 微米和更大，并且基底层的缺陷密度可以例如为1E8cm-2或更低的数量级。 因此，微电子器件可以形成在基底层上，在诸如蓝宝石的外来（差的晶格匹配）材料的衬底上。 可以使用本发明的HVPE基层制造的器件包括发光二极管，检测器，晶体管和半导体激光器。

    Process and composition for drying of gaseous hydrogen halides
    3.
    发明授权
    Process and composition for drying of gaseous hydrogen halides 失效
    用于干燥气态卤化氢的方法和组合物

    公开(公告)号：US4853148A

    公开(公告)日：1989-08-01

    申请号：US29631

    申请日：1987-03-24

    申请人： Glenn M. Tom ,  Duncan W. Brown

    发明人： Glenn M. Tom ,  Duncan W. Brown

    IPC分类号： B01D53/28 ,  B01J20/02 ,  B01J20/22 ,  C01B7/00 ,  C01B7/07 ,  C01B7/09 ,  C01B7/13 ,  C01B7/19 ,  C01G1/06

    CPC分类号： C01B7/197 ,  B01D53/28 ,  C01B7/0718 ,  C01B7/093 ,  C01B7/135 ,  C01G1/06 ,  Y10S34/01

    摘要： A process for drying a gaseous hydrogen halide of the formula HX, wherein X is selected from the group consisting of bromine, chlorine, fluorine, and iodine, to remove water impurity therefrom, comprising:contacting the water impurity-containing gaseous hydrogen halide with a scavenger including a support having associated therewith one or more members of the group consisting of:(a) an active scavenging moiety selected from one or more members of the group consisting of:(i) metal halide compounds dispersed in the support, of the formula MX.sub.y ; and(ii) metal halide pendant functional groups of the formula -MX.sub.y-1 covalently bonded to the support, wherein M is a y-valent metal, and y is an integer whose value is from 1 to 3;(b) corresponding partially or fully alkylated compounds and/or pendant functional groups, of the metal halide compounds and/or pendant functional groups of (a);wherein the alkylated compounds and/or pendant functional groups, when present, are reactive with the gaseous hydrogen halide to form the corresponding halide compounds and/or pendant functional groups of (a); andM being selected such that the heat of formation, .DELTA.H.sub.f of its hydrated halide, MX.sub.y.(H.sub.2 O).sub.n, is governed by the relationship:.DELTA.H.sub.f .gtoreq.n.times.10.1 kilocalories/mole of such hydrated halide compoundwherein n is the number of water molecules bound to the metal halide in the metal halide hydrate.Also disclosed is an appertaining scavenger composition and a contacting apparatus wherein the scavenger is deployed in a bed for contacting with the water impurity-containing gaseous hydrogen halide.

    Metal complex source reagents for MOCVD
    4.
    发明授权
    Metal complex source reagents for MOCVD 失效
    用于MOCVD的金属络合物源试剂

    公开(公告)号：US5453494A

    公开(公告)日：1995-09-26

    申请号：US181800

    申请日：1994-01-18

    申请人： Peter S. Kirlin ,  Duncan W. Brown ,  Robin A. Gardiner

    发明人： Peter S. Kirlin ,  Duncan W. Brown ,  Robin A. Gardiner

    IPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/448 ,  G01T5/08 ,  G02B6/02 ,  G02B6/036 ,  H01L39/24 ,  C06F5/00 ,  C07D213/22 ,  H01B12/00

    CPC分类号： G02B6/02 ,  C23C16/18 ,  C23C16/40 ,  C23C16/408 ,  C23C16/409 ,  C23C16/4481 ,  C23C16/4483 ,  C23C16/45561 ,  H01L39/2441

    摘要： Metal organic chemical vapor deposition (MOCVD) source reagents useful for formation of metal-containing films, such as thin film copper oxide high temperature superconductor (HTSC) materials. The source reagents have the formula MAyX wherein: M is a metal such as Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm Yb, Lu Bi, Tl, Y or Pb; A is a monodentate or multidentate organic ligand; y is 2 or 3; MAy is a stable sub-complex at STP conditions; and X is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O, and F. The ligand A may for example be selected from beta-diketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases. The complexes of the invention utilize monodentate or multidentate ligands to provide additional coordination to the metal atom, so that the resulting complex is of enhanced volatility characteristics, and enhanced suitability for MOCVD applications.

    摘要翻译： 用于形成含金属膜的金属有机化学气相沉积（MOCVD）源试剂，如薄膜氧化铜高温超导体（HTSC）材料。 所述源试剂具有下式：其中：M是金属如Cu，Ba，Sr，La，Nd，Ce，Pr，Sm，Eu，Th，Gd，Tb，Dy，Ho，Er，Tm Yb，Lu Bi ，Tl，Y或Pb; A是单齿或多齿有机配体; y为2或3; 在STP条件下，MAy是一个稳定的子复合体; 并且X是与M配位且含有独立地选自元素C，N，H，S，O和F的原子的一个或多个原子的单齿或多齿配体。配体A可以例如选自 β-二酮酸酯，环戊二烯基，烷基，全氟烷基，醇盐，全氟烷氧基化物和希夫碱。 本发明的络合物利用单齿或多齿配位体为金属原子提供额外的配位，使得所得复合物具有增强的挥发性特征，并且增强了对MOCVD应用的适用性。

    Method of forming a superconducting oxide layer by MOCVD
    5.
    发明授权
    Method of forming a superconducting oxide layer by MOCVD 失效
    通过MOCVD形成超导氧化物层的方法

    公开(公告)号：US5280012A

    公开(公告)日：1994-01-18

    申请号：US918141

    申请日：1992-07-22

    申请人： Peter S. Kirlin ,  Duncan W. Brown ,  Robin A. Gardiner

    发明人： Peter S. Kirlin ,  Duncan W. Brown ,  Robin A. Gardiner

    IPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/448 ,  G01T5/08 ,  G02B6/02 ,  G02B6/036 ,  H01L39/24 ,  C23C16/00 ,  B05D5/12

    CPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/408 ,  C23C16/409 ,  C23C16/4481 ,  C23C16/4483 ,  C23C16/45561 ,  G02B6/02 ,  H01L39/2441 ,  Y10S505/73 ,  Y10S505/734

    摘要： This invention is directed to the metal organic chemical vapor deposition (MOCVD) formation of copper oxide superconductor materials. Various source reagents of Group II elements suitable for high temperature superconductor (HTSC) material formation are described, including beta-diketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases, as well as complexes of such Group II compounds, utilizing monodentate or multidentate ligands to provide additional coordination to the Group IIA atom, so that the resulting complex is of enhanced volatility characteristics, and enhanced suitability for MOCVD applications. Also disclosed are methods of synthesizing such compounds and complexes, including a method of making Group II metal beta-diketonate compounds having enhanced thermal stability characteristics.

    摘要翻译： 本发明涉及氧化铜超导材料的金属有机化学气相沉积（MOCVD）的形成。 描述了适用于高温超导体（HTSC）材料形成的II族元素的各种源试剂，包括β-二酮酸酯，环戊二烯基，烷基，全氟烷基，烷氧基，全氟烷氧基和席夫碱，以及这些II族化合物的配合物，利用 单齿或多齿配体，以提供与IIA族原子的额外配位，使得所得复合物具有增强的挥发性特征，并增强了对MOCVD应用的适用性。 还公开了合成这种化合物和络合物的方法，包括制备具有增强的热稳定性特征的II族金属β-二酮化合物的方法。

    Chemical vapor desposition of silicon carbide
    7.
    发明授权
    Chemical vapor desposition of silicon carbide 失效
    化学气相沉积碳化硅

    公开(公告)号：US4923716A

    公开(公告)日：1990-05-08

    申请号：US248651

    申请日：1988-09-26

    申请人： Duncan W. Brown ,  James D. Parsons

    发明人： Duncan W. Brown ,  James D. Parsons

    IPC分类号： C23C16/32

    CPC分类号： C23C16/325

    摘要： Silicon carbide is deposted by chemical vapor deposition from a vapor source having a single molecular species that provides both the silicon and the carbon. The molecular species has the composition C.sub.n Si.sub.n H.sub.m, where m ranges from 2n+1 to 4n+1 inclusive and n ranges from 2 to 6 inclusive, and exhibits a primary pyrolysis mechanism producing reactive fragments containing both silicon and carbon atoms. Unbalanced decomposition paths are avoided. The silicon and carbon atoms are necessarily codeposited in equal numbers and at equal rates onto the substrate, producing stoichiometric deposited silicon carbide. Preferred molecular sources include H.sub.3 SiCH.sub.2 CH.sub.2 SiH.sub.3, a silacycloalkane of the form (--SiH.sub.2 CH.sub.2 --).sub.p, where p is 2, 3, 4, or 5, and a cyclic structure of the form (--SiH(CH.sub.3)--).sub.q, where q is 4 or 5.

    摘要翻译： 碳化硅通过化学气相沉积从具有提供硅和碳的单一分子种类的蒸气源中沉淀出来。 分子种类具有CnSinHm的组成，其中m范围为2n + 1至4n + 1，n为2至6，包括端值在内，并且表现出产生含有硅和碳原子的反应性片段的初级热解机理。 避免了不平衡的分解路径。 硅和碳原子必须以相等的数量和相等的速率共沉积到衬底上，产生化学计量沉积的碳化硅。 优选的分子源包括H3SiCH2CH2SiH3，（-SiH2CH2-）p形式的硅环烷烃，其中p为2,3,4或5，以及形式（-SiH（CH3） - ）q的环状结构，其中q为 4或5。

    Fluid storage and dispensing vessel with modified high surface area solid as fluid storage medium
    9.
    发明授权
    Fluid storage and dispensing vessel with modified high surface area solid as fluid storage medium 失效
    具有改进的高表面积固体的流体储存和分配容器作为流体储存介质

    公开(公告)号：US6027547A

    公开(公告)日：2000-02-22

    申请号：US080536

    申请日：1998-05-18

    申请人： Glenn M. Tom ,  Duncan W. Brown

    发明人： Glenn M. Tom ,  Duncan W. Brown

    IPC分类号： B01D53/04

    CPC分类号： B01D53/0415 ,  B01D53/02 ,  B01D2253/102 ,  B01D2253/104 ,  B01D2253/108 ,  B01D2253/25 ,  B01D2253/306 ,  B01D2257/20 ,  B01D2257/304 ,  B01D2257/406 ,  B01D2257/553 ,  B01D2257/93 ,  B01D2258/0216 ,  B01D2259/40088 ,  B01D2259/4525 ,  B01D2259/4541

    摘要： A fluid storage and dispensing system, comprising: a fluid storage and dispensing vessel constructed and arranged for selective dispensing of fluid therefrom; a solid-phase support in the vessel; and an affinity medium on the solid-phase support, wherein the affinity medium reversibly takes up the fluid when contacted therewith, and from which the fluid is disengagable under dispensing conditions. The affinity medium may be a liquid, oil, gel, or solid (porous solid, thin film solid, or bulk solid). The system of the invention may be employed for the storage and dispensing of fluids such as hydride, halide and dopant gases for manufacturing of semiconductor products.

    摘要翻译： 一种流体储存和分配系统，包括：构造和布置用于从其中选择性分配流体的流体储存和分配容器; 船上固相支撑; 和固相载体上的亲和介质，其中所述亲和介质在与其接触时可逆地吸收流体，并且在分配条件下流体可以从其中分离。 亲和介质可以是液体，油，凝胶或固体（多孔固体，薄膜固体或本体固体）。 本发明的系统可用于储存和分配诸如用于制造半导体产品的氢化物，卤化物和掺杂剂气体的流体。

    Growth of BaSrTiO.sub.3 using polyamine-based precursors
    10.
    发明授权
    Growth of BaSrTiO.sub.3 using polyamine-based precursors 失效
    使用多胺类前体生长BaSrTiO3

    公开(公告)号：US5919522A

    公开(公告)日：1999-07-06

    申请号：US835768

    申请日：1997-04-08

    申请人： Thomas H. Baum ,  Gregory T. Stauf ,  Peter S. Kirlin ,  Duncan W. Brown ,  Robin A. Gardiner ,  Gautam Bhandari ,  Brian A. Vaartstra

    发明人： Thomas H. Baum ,  Gregory T. Stauf ,  Peter S. Kirlin ,  Duncan W. Brown ,  Robin A. Gardiner ,  Gautam Bhandari ,  Brian A. Vaartstra

    IPC分类号： C07C49/12 ,  C07C211/14 ,  C23C16/18 ,  C23C16/40 ,  C23C16/448 ,  C23C16/00

    CPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/409 ,  C23C16/4481

    摘要： A method of forming a thin film of BaSrTiO.sub.3 on a substrate in a chemical vapor deposition zone, with transport of a metal precursor composition for the metal-containing film to the chemical vapor deposition zone via a liquid delivery apparatus including a vaporizer. A liquid precursor material is supplied to the liquid delivery apparatus for vaporization thereof to yield the vapor-phase metal precursor composition. The vapor-phase metal precursor composition is flowed to the chemical vapor deposition zone for deposition of metal on the substrate to form the metal-containing film. The liquid precursor material includes a metalorganic polyamine complex, the use of which permits the achievement of sustained operation of the liquid delivery chemical vapor deposition process between maintenance events, due to the low decomposition levels achieved in the vaporization of the polyamine-complexed precursor.

    摘要翻译： 一种在化学气相沉积区中在衬底上形成BaSrTiO3薄膜的方法，该方法通过包括蒸发器的液体输送装置将含金属膜的金属前体组合物输送到化学气相沉积区。 将液体前体材料供给到液体输送装置中以使其蒸发以产生气相金属前体组合物。 气相金属前体组合物流到化学气相沉积区，用于在基底上沉积金属以形成含金属膜。 液体前体材料包括金属有机多胺络合物，其用途允许在维持事件之间实现液体输送化学气相沉积工艺的持续操作，这是由于在多胺络合的前体的蒸发中实现的低分解水平。