摘要:
A low defect density (Ga,Al,In)N material. The (Ga, Al, In)N material may be of large area, crack-free character, having a defect density as low as 3×106 defects/cm2 or lower. Such (Ga,Al,In)N material is useful as a substrate for epitaxial growth of Group III-V nitride device structures thereon.
摘要翻译:低缺陷密度(Ga,Al,In)N材料。 (Ga,Al,In)N材料可能面积大,无裂纹,具有低至3×10 6缺陷/ cm 2以下的缺陷密度 。 这种(Ga,Al,In)N材料可用作其上的III-V族氮化物器件结构的外延生长的衬底。
摘要:
A low defect density (Ga,Al,In)N material. The (Ga, Al, In)N material may be of large area, crack-free character, having a defect density as low as 3×106 defects/cm2 or lower. Such (Ga,Al,In)N material is useful as a substrate for epitaxial growth of Group III-V nitride device structures thereon.
摘要翻译:低缺陷密度(Ga,Al,In)N材料。 (Ga,Al,In)N材料可以具有大面积,无裂纹特性,缺陷密度低至3×10 6缺陷/ cm 2或更低。 这种(Ga,Al,In)N材料可用作其上的III-V族氮化物器件结构的外延生长的衬底。