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1.发明授权Set of masks including a first mask and a second trimming mask with a semitransparent region having a transparency between 20% and 80% to control diffraction effects and obtain maximum depth of focus for the projection of structure patterns onto a semiconductor wafer 失效包括具有第一掩模和第二修整掩模的掩模，其具有透明度在20％至80％之间的半透明区域以控制衍射效应并获得用于将结构图案投影到半导体晶片上的最大焦深公开(公告)号：US07393614B2
公开(公告)日：2008-07-01
申请号：US10792693
申请日：2004-03-05
申请人： Roderick Köhle , Rainer Pforr , Jörg Thiele , Wolfgang Dettmann , Markus Hofsäss , Mario Hennig
发明人： Roderick Köhle , Rainer Pforr , Jörg Thiele , Wolfgang Dettmann , Markus Hofsäss , Mario Hennig
CPC分类号： G03F7/70466 , G03F1/30 , G03F1/34 , G03F1/70
摘要： A set of at least two masks for the projection of structure patterns coordinated with one another by a projection system into the same photosensitive layer of a semiconductor wafer, in which the set of at least two masks includes a primary mask having an opaque structure element, which is formed at a first position on the first mask. A second mask of the set, for example a trimming mask, which is assigned to the first mask, can have a semitransparent region assigned to the structure element of the first mask. The semitransparent region can be formed at the same position on the second mask as the opaque structure element on the first mask. With the aid of the suitable choice of the transparency of the semitransparent region, it is possible to enable an undesirable resist region to be trimmed away for enlargement of a process window during exposure of the photosensitive layer on the semiconductor wafer.
摘要翻译： 一组至少两个掩模，用于通过投影系统将相互配合的结构图案投影到半导体晶片的相同感光层中，其中该组至少两个掩模包括具有不透明结构元件的主掩模， 其形成在第一掩模上的第一位置。 该集合的第二掩码（例如，被分配给第一掩码的修剪掩模）可以具有分配给第一掩码的结构元素的半透明区域。 半透明区域可以形成在第二掩模上与第一掩模上的不透明结构元件相同的位置处。 借助于半透明区域的透明度的适当选择，有可能在半导体晶片上的感光层曝光期间使不期望的抗蚀剂区域被修剪以放大处理窗口。
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公开(公告)号：US07393613B2
公开(公告)日：2008-07-01
申请号：US10791763
申请日：2004-03-04
申请人： Wolfgang Dettmann , Jörg Thiele , Rainer Pforr , Mario Hennig , Karsten Zeiler
发明人： Wolfgang Dettmann , Jörg Thiele , Rainer Pforr , Mario Hennig , Karsten Zeiler
CPC分类号： G03F7/705 , G03F1/70 , G03F7/70466
摘要： A set of at least two masks, coordinated with one another, for the projection of structure patterns, into the same photosensitive layer arranged on a semiconductor wafer. The first mask includes a semitransparent or nontransparent first layer, which is arranged on a first substrate and in which at least one first opening is formed at a first position, the first opening having a first lateral dimension, which is greater than the resolution limit of a projection system for the projection of the structure patterns. The second mask includes a semitransparent or nontransparent second layer, which is arranged on a second substrate and in which at least one dummy structure assigned to the first opening is formed at a second position, the dummy structure having a second lateral dimension, which is smaller than the resolution limit of the projection system wherein the first position on the first mask corresponds to the second position on the second mask.
摘要翻译： 一组至少两个掩模，用于将结构图案的投影彼此配合到设置在半导体晶片上的相同感光层中。 第一掩模包括半透明或不透明的第一层，其布置在第一基板上，并且其中至少一个第一开口形成在第一位置，第一开口具有第一横向尺寸，该第一横向尺寸大于 用于投影结构图案的投影系统。 第二掩模包括半透明或不透明的第二层，其布置在第二基板上，并且其中在第二位置处形成分配给第一开口的至少一个虚拟结构，该虚拟结构具有第二横向尺寸，该第二横向尺寸较小 比投影系统的分辨率极限，其中第一掩模上的第一位置对应于第二掩模上的第二位置。
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公开(公告)号：US07045254B2
公开(公告)日：2006-05-16
申请号：US10307800
申请日：2002-12-02
IPC分类号： G03F9/00
摘要： A mask, and in particular a phase shift product mask, utilizes predetermined defects being produced during the fabrication thereof in the so-called “second layer” process. The defects are identified by markers in their direct vicinity. The markers are quadrangular and indicate, by virtue of their number in combination with their configuration, information about the respectively assigned defect, such as, for example, defect type, defect size, etc.
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4.发明授权公开(公告)号：US07262850B2
公开(公告)日：2007-08-28
申请号：US10735414
申请日：2003-12-12
IPC分类号： G01B11/00
CPC分类号： G01N21/95623 , G01N2021/95676 , G03F1/84 , G06T7/001 , G06T2207/10056 , G06T2207/30148
摘要： The invention relates to a method for inspection of periodic structures on lithography masks using a microscope with adjustable illumination and an operating element for movement of a mechanical stage with the lithography mask attached to it in order to record images of the lithography mask at a computer-controlled location on the lithography mask. The position, the size and the pitch specification of the lithography mask are stored.
摘要翻译： 本发明涉及一种使用具有可调节照明的显微镜对光刻掩模上的周期性结构进行检查的方法，以及用于使光刻掩模附着于其上的机械台的运动的操作元件，以便在计算机可读介质上记录光刻掩模的图像， 控制位置在光刻掩模上。 存储光刻掩模的位置，尺寸和间距规格。
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