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公开(公告)号：US4354198A
公开(公告)日：1982-10-12
申请号：US154700
申请日：1980-05-30
IPC分类号： H01L21/324 , H01L21/314 , H01L21/428 , H01L23/29 , H01L23/31 , H01L29/161
CPC分类号： H01L23/3171 , H01L21/428 , H01L23/291 , H01L2924/0002
摘要： The disclosure provides for the use of a group II-VI compound semiconductor as a surface passivator to control recombination of charge carriers at the surface of a group III-V compound semiconductor by a localized heating step. It is theorized for practice of the invention that the control of the recombination of the charge carriers is achieved by chemical reaction of the II-VI compound with excess group V element. In particular the disclosure provides for the use of a capping layer of laser annealed ZnS as a passivating layer on a GaAs device.
摘要翻译： 本公开提供了使用II-VI族化合物半导体作为表面钝化剂以通过局部加热步骤控制III-V族化合物半导体的表面上的载流子的重组。 对于本发明的实践，理论上可以通过II-VI化合物与过量的V族元素的化学反应来实现电荷载体的重组的控制。 具体地，本公开提供了在GaAs器件上使用激光退火的ZnS的覆盖层作为钝化层。
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2.发明授权
公开(公告)号：US5508829A
公开(公告)日：1996-04-16
申请号：US264177
申请日：1994-06-22
申请人： John L. Freeouf , Rodney T. Hodgson , Peter D. Kirchner , Michael R. Melloch , Jerry M. Woodall , David D. Nolte
发明人： John L. Freeouf , Rodney T. Hodgson , Peter D. Kirchner , Michael R. Melloch , Jerry M. Woodall , David D. Nolte
IPC分类号： G02F1/355 , G02F1/015 , G02F1/35 , H01L31/0232
CPC分类号： G02F1/3551 , G02F2202/101 , G03H2001/0264
摘要： A light responsive device (10) has a body (12) that includes a matrix comprised of Group III-V material, the matrix having inclusions (14) comprised of a Group V material contained therein. The body is responsive to a presence of a light beam that has a spatially varying intensity for modifying in a corresponding spatially varying manner a distribution of trapped photoexcited charge carriers within the body. The distribution of trapped charge carriers induces a corresponding spatial variation in at least one optical property of the Group III-V material, such as the index of refraction of the Group III-V material and/or an absorption coefficient of the Group III-V material. The Group III-V material is comprised of LTG GaAs:As or LTG AlGaAs:As. In an optical storage medium embodiment of the invention the spatial variation in the intensity of the light beam results from a simultaneous application of a first light beam (LB1) and a second light beam (LB2) to the body, and from interference fringes resulting from an intersection of said first and second light beams.
摘要翻译： 光响应装置（10）具有主体（12），其包括由III-V族材料构成的基体，所述基体具有由其中所含的V族材料构成的夹杂物（14）。 身体响应于存在具有空间变化的强度的光束，以便以对应的空间变化的方式修改被俘获的光激发电荷载体在体内的分布。 捕获的电荷载体的分布在III-V族材料的至少一种光学性质中引起相应的空间变化，例如III-V族材料的折射率和/或III-V族的吸收系数 材料。 III-V族材料由LTG GaAs：As或LTG AlGaAs：As组成。 在本发明的光学存储介质的实施例中，光束的强度的空间变化是由于将第一光束（LB1）和第二光束（LB2）同时施加到主体，并且由干涉条纹 所述第一和第二光束的交叉。
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公开(公告)号：US4550257A
公开(公告)日：1985-10-29
申请号：US626178
申请日：1984-06-29
IPC分类号： H01L21/3205 , C23C16/04 , H01J37/317 , H01J37/32
CPC分类号： B82Y10/00 , B82Y40/00 , C23C16/047 , H01J37/3174 , H01J37/32 , H01J2237/31738 , H01J2237/31759 , Y10S977/857
摘要： The formation of lines of the order of 8 Angstroms wide is achieved using a tunneling current through a gas that changes to provide a residue that is the basis of the line. The tunneling current energy is tuned to the energy required to dissociate the gas.
摘要翻译： 使用穿过气体的隧道电流来实现8埃量级的线的形成，该气体改变以提供作为线的基础的残留物。 隧道电流能量被调节到解离气体所需的能量。
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公开(公告)号：US5471948A
公开(公告)日：1995-12-05
申请号：US240880
申请日：1994-05-11
申请人： Jeremy Burroughes , Rodney T. Hodgson , David T. McInturff , Michael R. Melloch , Nobuo Otsuka , Paul M. Solomon , Alan C. Warren , Jerry M. Woodall
发明人： Jeremy Burroughes , Rodney T. Hodgson , David T. McInturff , Michael R. Melloch , Nobuo Otsuka , Paul M. Solomon , Alan C. Warren , Jerry M. Woodall
IPC分类号： H01L31/0232 , H01L31/105 , H01L21/20
CPC分类号： H01L31/0232 , H01L31/105
摘要： A doped or undoped photoresponsive material having metallic precipitates, and a PiN photodiode utilizing the material for detecting light having a wavelength of 1.3 micrometers. The PiN photodiode includes a substrate having a first compound semiconductor layer disposed thereon. The PiN photodiode further includes an optically responsive compound semiconductor layer disposed above the first compound semiconductor layer. The optically responsive layer includes a plurality of buried Schottky barriers, each of which is associated with an inclusion within a crystal lattice of a Group III-V material. The PiN device also includes a further compound semiconductor layer disposed above the optically responsive layer. For a transversely illuminated embodiment, waveguiding layers may also be disposed above and below the PiN structure. In one example the optically responsive layer is comprised of GaAs:As. The GaAs:As exhibits a very low room temperature dark current, even under forward bias conditions, and a responsivity to 1.3 micrometer radiation modulated at frequencies greater than 1 GHz.
摘要翻译： 具有金属沉淀物的掺杂或未掺杂的光响应材料，以及利用该材料用于检测波长为1.3微米的光的PiN光电二极管。 PiN光电二极管包括其上设置有第一化合物半导体层的基板。 PiN光电二极管还包括设置在第一化合物半导体层上方的光学响应化合物半导体层。 光学响应层包括多个埋置的肖特基势垒，其中每个都包含在III-V族材料的晶格内。 PiN器件还包括设置在光学响应层上方的另一化合物半导体层。 对于横向照明的实施例，也可以在PiN结构的上方和下方设置波导层。 在一个实例中，光响应层由GaAs：As组成。 GaAs：As表现出非常低的室温暗电流，即使在正向偏置条件下，并且对频率大于1 GHz的1.3微米辐射的响应度也是如此。
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5.发明授权Method of activating implanted impurities in broad area compound semiconductors by short time contact annealing 失效通过短时间接触退火激活广域化合物半导体中的植入杂质的方法
公开(公告)号：US4472206A
公开(公告)日：1984-09-18
申请号：US440655
申请日：1982-11-10
IPC分类号： C30B29/40 , C30B31/22 , H01L21/265 , H01L21/314 , H01L21/324 , H01L21/477
CPC分类号： H01L21/3245 , H01L21/26546 , H01L21/314
摘要： Ion implanted impurity activation in a multi-element compound semiconductor crystal such as gallium arsenide, GaAs, over a broad integrated circuit device area, is accomplished using a short time anneal, in the proximity of a uniform concentration of the most volatile element of said crystal, in solid form, over the broad integrated circuit device area surface. A GaAs integrated circuit wafer having ion implanted impurities in the surface for an integrated circuit is annealed in the vicinity of 800.degree.-900.degree. C. for a time of the order of 1-20 seconds in the proximity of a uniform layer of solid arsenic.
摘要翻译： 在广泛的集成电路器件区域上的多元素化合物半导体晶体（例如砷化镓，GaAs）中的离子注入杂质活化是通过使用短时间退火在所述晶体的最易挥发元素的均匀浓度附近 以固体形式，在广泛的集成电路器件区域表面上。 在集成电路表面上具有离子注入杂质的GaAs集成电路晶片在800-900℃附近在均匀的固体砷层附近退火约1-20秒的时间 。
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公开(公告)号：US4202704A
公开(公告)日：1980-05-13
申请号：US968887
申请日：1978-12-13
IPC分类号： H01L31/04 , H01L31/055
CPC分类号： H01L31/055 , Y02E10/52
摘要： Enhanced efficiency can be achieved in the construction of semiconductor optical energy conversion devices such as solar cells by providing a translucent frequency shifting supporting member with appropriate doping such as Al.sub.2 O.sub.3 :Cr.sup.+3 (Ruby) that is capable of shifting the wavelength of incident light energy in the direction of greatest efficiency of the semiconductor device. The efficiency can be further enhanced by providing a crystal perfection accommodation region between the active region of the device and the light frequency shifting substrate.
摘要翻译： 通过提供具有适当掺杂的半透明变频支撑构件，例如能够移动入射光能量的波长的Al 2 O 3 :Cr + 3（红宝石），可以在诸如太阳能电池的半导体光能转换装置的构造中实现增强的效率 在半导体器件效率最高的方向。 通过在器件的有源区域和光变换衬底之间提供晶体完整的容纳区域可以进一步提高效率。
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7.发明授权
公开(公告)号：US4920069A
公开(公告)日：1990-04-24
申请号：US183489
申请日：1988-04-15
IPC分类号： H01L21/20 , H01L21/263
CPC分类号： H01L21/2633 , H01L21/02395 , H01L21/02543 , H01L21/02546 , H01L21/02639 , Y10S148/017 , Y10S148/05 , Y10S148/065 , Y10S148/135 , Y10S148/169
摘要： Submicron structure fabrication is accomplished by providing vapor chemical erosion of a compound crystal by suppressing the more volatile elements so that the less volatile element is provided with an anti-agglomeration and erosion rate limiting capability which can be followed by subsequent regrowth in the same environment. The erosion is sensitive to crystallographic orientation.
摘要翻译： 亚微米结构的制造是通过抑制更多的挥发性元素来提供化合物晶体的蒸汽化学腐蚀来实现的，从而使挥发性较低的元件具有抗附聚和侵蚀速率限制能力，随后可以在相同的环境中随后再生长。 侵蚀对晶体取向敏感。
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公开(公告)号：US4807006A
公开(公告)日：1989-02-21
申请号：US64186
申请日：1987-06-19
IPC分类号： H01L31/09 , G01J1/02 , H01L31/00 , H01L31/0304 , H01L31/108 , H01L31/109 , H01L27/14
CPC分类号： H01L31/03046 , H01L31/1085 , H01L31/109 , Y02E10/544 , Y02P70/521
摘要： A semiconductor photodetector is formed of interdigitated, metal-semiconductor-metal electrodes disposed on a surface of semi-insulating semiconductor material, gallium arsenide. Radiation such as infra-red or visible light is converted to an electric current flowing between the electrodes upon application of a bias voltage between the electrodes. A Schottky barrier at the junction of each electrode surface and the semiconductor surface limits current flow to that produced by photons. Tunneling of charge carriers of the current under the Schottky barrier, which tunneling results from the entrapment of charge carriers on the semiconductor surface, is inhibited by the production of a heterojunction surface layer upon the foregoing surface between the electrodes to repulse the charge carriers and prevent their entrapment at the surface. The heterojunction layer may be doped to enhance the repulsion of charge carriers. The heterojunction surface layer is of sufficient thickness to prevent tunneling of photogenerated carriers to a noncontacted region of the surface of the heterojunction layer and to also permit efficient repulsion of charge carriers from the surface. Longer wavelength photodetectors may also be formed in this way by providing misfit dislocation regions between the interaction region, which may be GaInAs, and a GaAs substrate, thereby providing a pseudo-morphic interaction region which is graded back to a heterojunction layer at the surface.
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公开(公告)号：US4757369A
公开(公告)日：1988-07-12
申请号：US60700
申请日：1987-06-10
IPC分类号： H01L21/338 , H01L21/28 , H01L21/285 , H01L29/41 , H01L29/43 , H01L29/45 , H01L29/80 , H01L29/812 , H01L29/167 , H01L23/48 , H01L29/161 , H01L29/62
CPC分类号： H01L21/28581 , H01L21/28575 , H01L29/452
摘要： A layer of an amphoteric dopant on the surface of a group III-V intermetallic semiconductor crystal will diffuse into the crystal surface in a heating cycle forming a stable contact. The contact can be ohmic or rectifying depending on the localized presence of an excess of one crystal ingredient. A layer of Si on GaAs upon heating forms a rectifying contact. When the layer of Si contains As, the contact is ohmic.
摘要翻译： 在III-V族金属间半导体晶体表面上的两性掺杂剂层将在形成稳定接触的加热循环中扩散到晶体表面。 接触可以是欧姆的或整流的，这取决于过量的一种晶体成分的局部存在。 在加热时GaAs上的Si层形成整流接触。 当Si层含有As时，接触是欧姆的。
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10.发明授权
公开(公告)号：US4597825A
公开(公告)日：1986-07-01
申请号：US718987
申请日：1985-04-02
IPC分类号： H01L21/314 , H01L23/29 , H01L23/31 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L23/3171 , H01L21/314 , H01L23/291 , H01L23/298 , H01L2924/0002
摘要： Crystalline compound semiconductors are passivated with a layer of the most volatile element thereof to prevent the formation of oxides that would interfere with further processing. A GaAs crystal is provided with a surface layer of arsenic. The arsenic layer is formed by exposure to light having a photon energy greater than 1.8 eV, at a power density of 0.01 to 0.5 watts per cm.sup.2 while the GaAs immersed in a 1:1 HCl:H.sub.2 O solution for a period of 10-30 minutes. The intermediate processing passivated GaAs crystal may be stored and handled in air and the As layer is removed by low temperature baking.
摘要翻译： 结晶化合物半导体被其最易挥发的元素层钝化以防止会妨碍进一步加工的氧化物的形成。 GaAs晶体设置有砷的表面层。 通过暴露于具有大于1.8eV的光子能量的光而形成砷层，功率密度为0.01至0.5瓦特/ cm2，而GaAs浸入1:1的HCl:H 2 O溶液中10-30分钟 。 中间处理钝化GaAs晶体可以在空气中储存和处理，并且通过低温烘烤除去As层。
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