利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

21 条记录 (耗时 0.019 秒)

    Optical energy conversion
    1.
    发明授权
    Optical energy conversion 失效
    光能转换

    公开(公告)号：US4202704A

    公开(公告)日：1980-05-13

    申请号：US968887

    申请日：1978-12-13

    申请人： Rodney T. Hodgson ,  Harold J. Hovel ,  Jerry M. Woodall

    发明人： Rodney T. Hodgson ,  Harold J. Hovel ,  Jerry M. Woodall

    IPC分类号： H01L31/04 ,  H01L31/055

    CPC分类号： H01L31/055 ,  Y02E10/52

    摘要： Enhanced efficiency can be achieved in the construction of semiconductor optical energy conversion devices such as solar cells by providing a translucent frequency shifting supporting member with appropriate doping such as Al.sub.2 O.sub.3 :Cr.sup.+3 (Ruby) that is capable of shifting the wavelength of incident light energy in the direction of greatest efficiency of the semiconductor device. The efficiency can be further enhanced by providing a crystal perfection accommodation region between the active region of the device and the light frequency shifting substrate.

    摘要翻译： 通过提供具有适当掺杂的半透明变频支撑构件，例如能够移动入射光能量的波长的Al 2 O 3 :Cr + 3（红宝石），可以在诸如太阳能电池的半导体光能转换装置的构造中实现增强的效率 在半导体器件效率最高的方向。 通过在器件的有源区域和光变换衬底之间提供晶体完整的容纳区域可以进一步提高效率。

    LTG AlGaAs non-linear optical material and devices fabricated therefrom
    2.
    发明授权
    LTG AlGaAs non-linear optical material and devices fabricated therefrom 失效
    LTG AlGaAs非线性光学材料及其制造的器件

    公开(公告)号：US5508829A

    公开(公告)日：1996-04-16

    申请号：US264177

    申请日：1994-06-22

    申请人： John L. Freeouf ,  Rodney T. Hodgson ,  Peter D. Kirchner ,  Michael R. Melloch ,  Jerry M. Woodall ,  David D. Nolte

    发明人： John L. Freeouf ,  Rodney T. Hodgson ,  Peter D. Kirchner ,  Michael R. Melloch ,  Jerry M. Woodall ,  David D. Nolte

    IPC分类号： G02F1/355 ,  G02F1/015 ,  G02F1/35 ,  H01L31/0232

    CPC分类号： G02F1/3551 ,  G02F2202/101 ,  G03H2001/0264

    摘要： A light responsive device (10) has a body (12) that includes a matrix comprised of Group III-V material, the matrix having inclusions (14) comprised of a Group V material contained therein. The body is responsive to a presence of a light beam that has a spatially varying intensity for modifying in a corresponding spatially varying manner a distribution of trapped photoexcited charge carriers within the body. The distribution of trapped charge carriers induces a corresponding spatial variation in at least one optical property of the Group III-V material, such as the index of refraction of the Group III-V material and/or an absorption coefficient of the Group III-V material. The Group III-V material is comprised of LTG GaAs:As or LTG AlGaAs:As. In an optical storage medium embodiment of the invention the spatial variation in the intensity of the light beam results from a simultaneous application of a first light beam (LB1) and a second light beam (LB2) to the body, and from interference fringes resulting from an intersection of said first and second light beams.

    摘要翻译： 光响应装置（10）具有主体（12），其包括由III-V族材料构成的基体，所述基体具有由其中所含的V族材料构成的夹杂物（14）。 身体响应于存在具有空间变化的强度的光束，以便以对应的空间变化的方式修改被俘获的光激发电荷载体在体内的分布。 捕获的电荷载体的分布在III-V族材料的至少一种光学性质中引起相应的空间变化，例如III-V族材料的折射率和/或III-V族的吸收系数 材料。 III-V族材料由LTG GaAs：As或LTG AlGaAs：As组成。 在本发明的光学存储介质的实施例中，光束的强度的空间变化是由于将第一光束（LB1）和第二光束（LB2）同时施加到主体，并且由干涉条纹 所述第一和第二光束的交叉。

    Method of making a compound semiconductor having metallic inclusions
    5.
    发明授权
    Method of making a compound semiconductor having metallic inclusions 失效
    制造具有金属夹杂物的化合物半导体的方法

    公开(公告)号：US5471948A

    公开(公告)日：1995-12-05

    申请号：US240880

    申请日：1994-05-11

    申请人： Jeremy Burroughes ,  Rodney T. Hodgson ,  David T. McInturff ,  Michael R. Melloch ,  Nobuo Otsuka ,  Paul M. Solomon ,  Alan C. Warren ,  Jerry M. Woodall

    发明人： Jeremy Burroughes ,  Rodney T. Hodgson ,  David T. McInturff ,  Michael R. Melloch ,  Nobuo Otsuka ,  Paul M. Solomon ,  Alan C. Warren ,  Jerry M. Woodall

    IPC分类号： H01L31/0232 ,  H01L31/105 ,  H01L21/20

    CPC分类号： H01L31/0232 ,  H01L31/105

    摘要： A doped or undoped photoresponsive material having metallic precipitates, and a PiN photodiode utilizing the material for detecting light having a wavelength of 1.3 micrometers. The PiN photodiode includes a substrate having a first compound semiconductor layer disposed thereon. The PiN photodiode further includes an optically responsive compound semiconductor layer disposed above the first compound semiconductor layer. The optically responsive layer includes a plurality of buried Schottky barriers, each of which is associated with an inclusion within a crystal lattice of a Group III-V material. The PiN device also includes a further compound semiconductor layer disposed above the optically responsive layer. For a transversely illuminated embodiment, waveguiding layers may also be disposed above and below the PiN structure. In one example the optically responsive layer is comprised of GaAs:As. The GaAs:As exhibits a very low room temperature dark current, even under forward bias conditions, and a responsivity to 1.3 micrometer radiation modulated at frequencies greater than 1 GHz.

    摘要翻译： 具有金属沉淀物的掺杂或未掺杂的光响应材料，以及利用该材料用于检测波长为1.3微米的光的PiN光电二极管。 PiN光电二极管包括其上设置有第一化合物半导体层的基板。 PiN光电二极管还包括设置在第一化合物半导体层上方的光学响应化合物半导体层。 光学响应层包括多个埋置的肖特基势垒，其中每个都包含在III-V族材料的晶格内。 PiN器件还包括设置在光学响应层上方的另一化合物半导体层。 对于横向照明的实施例，也可以在PiN结构的上方和下方设置波导层。 在一个实例中，光响应层由GaAs：As组成。 GaAs：As表现出非常低的室温暗电流，即使在正向偏置条件下，并且对频率大于1 GHz的1.3微米辐射的响应度也是如此。

    Compound semiconductor having metallic inclusions and devices fabricated therefrom
    6.
    发明授权
    Compound semiconductor having metallic inclusions and devices fabricated therefrom 失效
    具有金属夹杂物的复合半导体及其制造的器件

    公开(公告)号：US5371399A

    公开(公告)日：1994-12-06

    申请号：US104423

    申请日：1993-08-09

    申请人： Jeremy Burroughes ,  Rodney T. Hodgson ,  David T. McInturff ,  Michael R. Melloch ,  Nobuo Otsuka ,  Paul M. Solomon ,  Alan C. Warren ,  Jerry M Woodall

    发明人： Jeremy Burroughes ,  Rodney T. Hodgson ,  David T. McInturff ,  Michael R. Melloch ,  Nobuo Otsuka ,  Paul M. Solomon ,  Alan C. Warren ,  Jerry M Woodall

    IPC分类号： H01L31/0232 ,  H01L31/105 ,  H01L29/48

    CPC分类号： H01L31/0232 ,  H01L31/105

    摘要： A doped or undoped photoresponsive material having metallic precipitates, and a PiN photodiode utilizing the material for detecting light having a wavelength of 1.3 micrometers. The PiN photodiode includes a substrate having a first compound semiconductor layer disposed thereon. The PiN photodiode further includes an optically responsive compound semiconductor layer disposed above the first compound semiconductor layer. The optically responsive layer includes a plurality of buried Schottky barriers, each of which is associated with an inclusion within a crystal lattice of a Group III-V material. The PiN device also includes a further compound semiconductor layer disposed above the optically responsive layer. For a transversely illuminated embodiment, waveguiding layers may also be disposed above and below the PiN structure. In one example the optically responsive layer is comprised of GaAs:As. The GaAs:As exhibits a very low room temperature dark current, even under forward bias conditions, and a responsivity to 1.3 micrometer radiation modulated at frequencies greater than 1 GHz.

    摘要翻译： 具有金属沉淀物的掺杂或未掺杂的光响应材料，以及利用该材料用于检测波长为1.3微米的光的PiN光电二极管。 PiN光电二极管包括其上设置有第一化合物半导体层的基板。 PiN光电二极管还包括设置在第一化合物半导体层上方的光学响应化合物半导体层。 光学响应层包括多个埋置的肖特基势垒，其中每个都包含在III-V族材料的晶格内。 PiN器件还包括设置在光学响应层上方的另一化合物半导体层。 对于横向照明的实施例，也可以在PiN结构的上方和下方设置波导层。 在一个实例中，光响应层由GaAs：As组成。 GaAs：As表现出非常低的室温暗电流，即使在正向偏置条件下，并且对频率大于1 GHz的1.3微米辐射的响应度也是如此。