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1.发明授权Method of activating implanted impurities in broad area compound semiconductors by short time contact annealing 失效通过短时间接触退火激活广域化合物半导体中的植入杂质的方法
公开(公告)号：US4472206A
公开(公告)日：1984-09-18
申请号：US440655
申请日：1982-11-10
IPC分类号： C30B29/40 , C30B31/22 , H01L21/265 , H01L21/314 , H01L21/324 , H01L21/477
CPC分类号： H01L21/3245 , H01L21/26546 , H01L21/314
摘要： Ion implanted impurity activation in a multi-element compound semiconductor crystal such as gallium arsenide, GaAs, over a broad integrated circuit device area, is accomplished using a short time anneal, in the proximity of a uniform concentration of the most volatile element of said crystal, in solid form, over the broad integrated circuit device area surface. A GaAs integrated circuit wafer having ion implanted impurities in the surface for an integrated circuit is annealed in the vicinity of 800.degree.-900.degree. C. for a time of the order of 1-20 seconds in the proximity of a uniform layer of solid arsenic.
摘要翻译： 在广泛的集成电路器件区域上的多元素化合物半导体晶体（例如砷化镓，GaAs）中的离子注入杂质活化是通过使用短时间退火在所述晶体的最易挥发元素的均匀浓度附近 以固体形式，在广泛的集成电路器件区域表面上。 在集成电路表面上具有离子注入杂质的GaAs集成电路晶片在800-900℃附近在均匀的固体砷层附近退火约1-20秒的时间 。
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2.发明授权
公开(公告)号：US5508829A
公开(公告)日：1996-04-16
申请号：US264177
申请日：1994-06-22
申请人： John L. Freeouf , Rodney T. Hodgson , Peter D. Kirchner , Michael R. Melloch , Jerry M. Woodall , David D. Nolte
发明人： John L. Freeouf , Rodney T. Hodgson , Peter D. Kirchner , Michael R. Melloch , Jerry M. Woodall , David D. Nolte
IPC分类号： G02F1/355 , G02F1/015 , G02F1/35 , H01L31/0232
CPC分类号： G02F1/3551 , G02F2202/101 , G03H2001/0264
摘要： A light responsive device (10) has a body (12) that includes a matrix comprised of Group III-V material, the matrix having inclusions (14) comprised of a Group V material contained therein. The body is responsive to a presence of a light beam that has a spatially varying intensity for modifying in a corresponding spatially varying manner a distribution of trapped photoexcited charge carriers within the body. The distribution of trapped charge carriers induces a corresponding spatial variation in at least one optical property of the Group III-V material, such as the index of refraction of the Group III-V material and/or an absorption coefficient of the Group III-V material. The Group III-V material is comprised of LTG GaAs:As or LTG AlGaAs:As. In an optical storage medium embodiment of the invention the spatial variation in the intensity of the light beam results from a simultaneous application of a first light beam (LB1) and a second light beam (LB2) to the body, and from interference fringes resulting from an intersection of said first and second light beams.
摘要翻译： 光响应装置（10）具有主体（12），其包括由III-V族材料构成的基体，所述基体具有由其中所含的V族材料构成的夹杂物（14）。 身体响应于存在具有空间变化的强度的光束，以便以对应的空间变化的方式修改被俘获的光激发电荷载体在体内的分布。 捕获的电荷载体的分布在III-V族材料的至少一种光学性质中引起相应的空间变化，例如III-V族材料的折射率和/或III-V族的吸收系数 材料。 III-V族材料由LTG GaAs：As或LTG AlGaAs：As组成。 在本发明的光学存储介质的实施例中，光束的强度的空间变化是由于将第一光束（LB1）和第二光束（LB2）同时施加到主体，并且由干涉条纹 所述第一和第二光束的交叉。
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公开(公告)号：US4550257A
公开(公告)日：1985-10-29
申请号：US626178
申请日：1984-06-29
IPC分类号： H01L21/3205 , C23C16/04 , H01J37/317 , H01J37/32
CPC分类号： B82Y10/00 , B82Y40/00 , C23C16/047 , H01J37/3174 , H01J37/32 , H01J2237/31738 , H01J2237/31759 , Y10S977/857
摘要： The formation of lines of the order of 8 Angstroms wide is achieved using a tunneling current through a gas that changes to provide a residue that is the basis of the line. The tunneling current energy is tuned to the energy required to dissociate the gas.
摘要翻译： 使用穿过气体的隧道电流来实现8埃量级的线的形成，该气体改变以提供作为线的基础的残留物。 隧道电流能量被调节到解离气体所需的能量。
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公开(公告)号：US5471948A
公开(公告)日：1995-12-05
申请号：US240880
申请日：1994-05-11
申请人： Jeremy Burroughes , Rodney T. Hodgson , David T. McInturff , Michael R. Melloch , Nobuo Otsuka , Paul M. Solomon , Alan C. Warren , Jerry M. Woodall
发明人： Jeremy Burroughes , Rodney T. Hodgson , David T. McInturff , Michael R. Melloch , Nobuo Otsuka , Paul M. Solomon , Alan C. Warren , Jerry M. Woodall
IPC分类号： H01L31/0232 , H01L31/105 , H01L21/20
CPC分类号： H01L31/0232 , H01L31/105
摘要： A doped or undoped photoresponsive material having metallic precipitates, and a PiN photodiode utilizing the material for detecting light having a wavelength of 1.3 micrometers. The PiN photodiode includes a substrate having a first compound semiconductor layer disposed thereon. The PiN photodiode further includes an optically responsive compound semiconductor layer disposed above the first compound semiconductor layer. The optically responsive layer includes a plurality of buried Schottky barriers, each of which is associated with an inclusion within a crystal lattice of a Group III-V material. The PiN device also includes a further compound semiconductor layer disposed above the optically responsive layer. For a transversely illuminated embodiment, waveguiding layers may also be disposed above and below the PiN structure. In one example the optically responsive layer is comprised of GaAs:As. The GaAs:As exhibits a very low room temperature dark current, even under forward bias conditions, and a responsivity to 1.3 micrometer radiation modulated at frequencies greater than 1 GHz.
摘要翻译： 具有金属沉淀物的掺杂或未掺杂的光响应材料，以及利用该材料用于检测波长为1.3微米的光的PiN光电二极管。 PiN光电二极管包括其上设置有第一化合物半导体层的基板。 PiN光电二极管还包括设置在第一化合物半导体层上方的光学响应化合物半导体层。 光学响应层包括多个埋置的肖特基势垒，其中每个都包含在III-V族材料的晶格内。 PiN器件还包括设置在光学响应层上方的另一化合物半导体层。 对于横向照明的实施例，也可以在PiN结构的上方和下方设置波导层。 在一个实例中，光响应层由GaAs：As组成。 GaAs：As表现出非常低的室温暗电流，即使在正向偏置条件下，并且对频率大于1 GHz的1.3微米辐射的响应度也是如此。
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公开(公告)号：US4354198A
公开(公告)日：1982-10-12
申请号：US154700
申请日：1980-05-30
IPC分类号： H01L21/324 , H01L21/314 , H01L21/428 , H01L23/29 , H01L23/31 , H01L29/161
CPC分类号： H01L23/3171 , H01L21/428 , H01L23/291 , H01L2924/0002
摘要： The disclosure provides for the use of a group II-VI compound semiconductor as a surface passivator to control recombination of charge carriers at the surface of a group III-V compound semiconductor by a localized heating step. It is theorized for practice of the invention that the control of the recombination of the charge carriers is achieved by chemical reaction of the II-VI compound with excess group V element. In particular the disclosure provides for the use of a capping layer of laser annealed ZnS as a passivating layer on a GaAs device.
摘要翻译： 本公开提供了使用II-VI族化合物半导体作为表面钝化剂以通过局部加热步骤控制III-V族化合物半导体的表面上的载流子的重组。 对于本发明的实践，理论上可以通过II-VI化合物与过量的V族元素的化学反应来实现电荷载体的重组的控制。 具体地，本公开提供了在GaAs器件上使用激光退火的ZnS的覆盖层作为钝化层。
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公开(公告)号：US4202704A
公开(公告)日：1980-05-13
申请号：US968887
申请日：1978-12-13
IPC分类号： H01L31/04 , H01L31/055
CPC分类号： H01L31/055 , Y02E10/52
摘要： Enhanced efficiency can be achieved in the construction of semiconductor optical energy conversion devices such as solar cells by providing a translucent frequency shifting supporting member with appropriate doping such as Al.sub.2 O.sub.3 :Cr.sup.+3 (Ruby) that is capable of shifting the wavelength of incident light energy in the direction of greatest efficiency of the semiconductor device. The efficiency can be further enhanced by providing a crystal perfection accommodation region between the active region of the device and the light frequency shifting substrate.
摘要翻译： 通过提供具有适当掺杂的半透明变频支撑构件，例如能够移动入射光能量的波长的Al 2 O 3 :Cr + 3（红宝石），可以在诸如太阳能电池的半导体光能转换装置的构造中实现增强的效率 在半导体器件效率最高的方向。 通过在器件的有源区域和光变换衬底之间提供晶体完整的容纳区域可以进一步提高效率。
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公开(公告)号：US4366493A
公开(公告)日：1982-12-28
申请号：US161611
申请日：1980-06-20
IPC分类号： H01L29/80 , H01L21/28 , H01L21/331 , H01L29/06 , H01L29/201 , H01L29/43 , H01L29/45 , H01L29/73 , H01L29/772 , H01L29/86 , H01L27/12
CPC分类号： H01L29/86 , H01L29/201 , H01L29/452 , H01L29/772
摘要： A semiconductor device of the ballistic type, wherein the carrier transport in the body of the device from one electrode to the other takes place essentially free of collisions, is fabricated with a semiconductor body having a long mean-free path, a body width between ohmic electrodes that is less than or equal to the product of the velocity of a carrier and the time to a collision, but more than the distance that will permit quantum mechanical tunnelling, an impressed voltage less than required for an intervalley carrier transition and having the ohmic external contact on each surface of the body free of any barrier to carrier flow. A ballistic type triode device is provided with a current modulating electrode included within the body of the device. The triode device body is of n type conductivity gallium arsenide containing a zinc doped p type conductivity gallium arsenide current modulating inclusion in the body and having, as at least one ohmic external contact, a graded bandgap indium gallium arsenide region.
摘要翻译： 一种防弹型半导体器件，其中将器件本体中的载体从一个电极输送至另一个电极的载体基本上没有碰撞发生，其半导体本体具有长的无平均通路，欧姆体之间的体宽 电极小于或等于载体速度与碰撞时间的乘积，但大于允许量子力学隧道的距离，外加电压小于间隔载波转换所需的电压，并具有欧姆 身体每个表面上的外部接触没有载体流动的任何障碍。 弹道式三极管装置设置有包括在装置主体内的电流调制电极。 三极管器件本体是n型导电性砷化镓，其含有锌掺杂的p型导电砷化镓电流，其调节包含在体内并具有作为至少一个欧姆外部接触的梯度带隙铟镓砷区域。
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8.发明授权Annealing of ion implanted III-V compounds in the presence of another III-V 失效在具有较高解离压力的另一种III-V化合物的存在下退火离子注入的III-V化合物
公开(公告)号：US4312681A
公开(公告)日：1982-01-26
申请号：US142916
申请日：1980-04-23
IPC分类号： H01L21/265 , H01L21/324 , H01L21/477
CPC分类号： H01L21/3245 , Y10S148/056 , Y10S148/084
摘要： Practice of the disclosure reduces thermal decomposition and retains stoichiometry during annealing of a multiple element intermetallic semiconductor material by heating it in an environment with an excess of the most volatile constituent. In particular, practice of the disclosure is obtained by annealing a GaAs wafer with a surface into which Si has been implanted while the surface is in proximity to InAs.
摘要翻译： 本公开的实践减少了热分解，并且在多元素金属间半导体材料的退火期间通过在具有过量挥发性成分的环境中加热来保持化学计量。 特别地，本公开的实践是通过在表面接近InAs的情况下将具有Si的表面退火成GaAs晶片获得的。
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公开(公告)号：US4757369A
公开(公告)日：1988-07-12
申请号：US60700
申请日：1987-06-10
IPC分类号： H01L21/338 , H01L21/28 , H01L21/285 , H01L29/41 , H01L29/43 , H01L29/45 , H01L29/80 , H01L29/812 , H01L29/167 , H01L23/48 , H01L29/161 , H01L29/62
CPC分类号： H01L21/28581 , H01L21/28575 , H01L29/452
摘要： A layer of an amphoteric dopant on the surface of a group III-V intermetallic semiconductor crystal will diffuse into the crystal surface in a heating cycle forming a stable contact. The contact can be ohmic or rectifying depending on the localized presence of an excess of one crystal ingredient. A layer of Si on GaAs upon heating forms a rectifying contact. When the layer of Si contains As, the contact is ohmic.
摘要翻译： 在III-V族金属间半导体晶体表面上的两性掺杂剂层将在形成稳定接触的加热循环中扩散到晶体表面。 接触可以是欧姆的或整流的，这取决于过量的一种晶体成分的局部存在。 在加热时GaAs上的Si层形成整流接触。 当Si层含有As时，接触是欧姆的。
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公开(公告)号：US4638342A
公开(公告)日：1987-01-20
申请号：US419381
申请日：1982-09-17
IPC分类号： H01L29/80 , H01L21/338 , H01L29/772 , H01L29/812 , H01L29/56
CPC分类号： H01L29/8122 , H01L29/7722
摘要： An electrical device which employs two-dimensional space charge modulation in a semiconductor structure. The device has an approximately Debye length wide contact and a rectifying contact positioned adjacent to each other within a Debye length on a semiconductor body and a contact remotely positioned. A bias on the rectifying contact will effect conduction between the other contacts.
摘要翻译： 一种在半导体结构中采用二维空间电荷调制的电子装置。 该器件在半导体本体上的德拜长度和远程定位的触点之间具有大致德拜长度的宽触点和整流触点彼此相邻定位。 整流触点的偏压将影响其他触点之间的导通。
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