Attenuating phase shift photomasks
    1.
    发明授权
    Attenuating phase shift photomasks 失效
    衰减相移光掩模

    公开(公告)号:US06174631B1

    公开(公告)日:2001-01-16

    申请号:US09484149

    申请日:2000-01-18

    IPC分类号: G03F900

    CPC分类号: G03F1/32 G03F1/56

    摘要: Transmissive attenuated embedded phase shifter photomasks comprising at least one polymeric material, preferably an amorphous fluoropolymer or an amorphous fluoropolymer doped with a fluorine functionalized organosilane, and organosilicates, or combinations thereof, the polymeric material having: (a) an index of refraction (n) in a range from 1.2 to 2.0, preferably in the range from 1.26 to 1.8, at a selected lithographic wavelength below 400 nm; and (b) an extinction coefficient (k) in a range from 0.04 to 0.8, preferably in the range from 0.06 to 0.59 at the selected lithographic wavelength below 400 nm.

    摘要翻译: 透射衰减的嵌入式移相器光掩模包括至少一种聚合材料,优选无定形含氟聚合物或掺杂有氟官能化的有机硅烷的无定形含氟聚合物,以及有机硅酸盐或其组合,所述聚合物材料具有:(a)折射率(n) 在选择的光刻波长低于400nm的范围内为1.2至2.0,优选在1.26至1.8的范围内; 和(b)在低于400nm的选定光刻波长下,在0.04至0.8的范围内,优选在0.06至0.59的范围内的消光系数(k)。

    Attenuating phase shift photomasks
    2.
    发明授权
    Attenuating phase shift photomasks 失效
    衰减相移光掩模

    公开(公告)号:US06096460A

    公开(公告)日:2000-08-01

    申请号:US294575

    申请日:1999-04-20

    摘要: Transmissive attenuated embedded phase shifter photomasks comprising at least one polymeric material, preferably an amorphous fluoropolymer or an amorphous fluoropolymer doped with a fluorine functionalized organosilane, and organosilicates, or combinations thereof, the polymeric material having: (a) an index of refraction (n) in a range from 1.2 to 2.0, preferably in the range from 1.26 to 1.8, at a selected lithographic wavelength below 400 nm; and (b) an extinction coefficient (k) in a range from 0.04 to 0.8, preferably in the range from 0.06 to 0.59 at the selected lithographic wavelength below 400 nm.

    摘要翻译: 透射衰减的嵌入式移相器光掩模包括至少一种聚合材料,优选无定形含氟聚合物或掺杂有氟官能化的有机硅烷的无定形含氟聚合物,以及有机硅酸盐或其组合,所述聚合物材料具有:(a)折射率(n) 在选择的光刻波长低于400nm的范围内为1.2至2.0,优选在1.26至1.8的范围内; 和(b)在低于400nm的选定光刻波长下,在0.04至0.8的范围内,优选在0.06至0.59的范围内的消光系数(k)。