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1.发明授权公开(公告)号：US10897254B2
公开(公告)日：2021-01-19
申请号：US16263409
申请日：2019-01-31
Applicant: Rohm Co., Ltd.
Inventor： Yuji Ishimatsu , Motohiro Ando
Abstract: A power semiconductor drive circuit includes a parallel circuit connected to a gate of a power semiconductor element and constituted by two transistors for setting gate resistance of the power semiconductor element; a gate voltage monitoring circuit connected to the gate of the power semiconductor element and the parallel circuit, wherein a monitoring voltage is set in the gate voltage monitoring circuit to monitor a gate voltage of the power semiconductor element; a signal delay circuit to delay an output signal of the gate voltage monitoring circuit; and a gate control circuit to change the magnitude of combined resistance of the parallel circuit based on an output signal output from the signal delay circuit.
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2.发明申请公开(公告)号：US20190165783A1
公开(公告)日：2019-05-30
申请号：US16263409
申请日：2019-01-31
Applicant: Rohm Co., Ltd.
Inventor： Yuji Ishimatsu , Motohiro Ando
Abstract: A power semiconductor drive circuit includes a parallel circuit connected to a gate of a power semiconductor element and constituted by two transistors for setting gate resistance of the power semiconductor element; a gate voltage monitoring circuit connected to the gate of the power semiconductor element and the parallel circuit, wherein a monitoring voltage is set in the gate voltage monitoring circuit to monitor a gate voltage of the power semiconductor element; a signal delay circuit to delay an output signal of the gate voltage monitoring circuit; and a gate control circuit to change the magnitude of combined resistance of the parallel circuit based on an output signal output from the signal delay circuit.
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3.发明授权公开(公告)号：US10224929B2
公开(公告)日：2019-03-05
申请号：US15646826
申请日：2017-07-11
Applicant: Rohm Co., Ltd.
Inventor： Yuji Ishimatsu , Motohiro Ando
Abstract: A power semiconductor drive circuit includes a parallel circuit connected to a gate of a power semiconductor element and constituted by two transistors for setting gate resistance of the power semiconductor element; a gate voltage monitoring circuit connected to the gate of the power semiconductor element and the parallel circuit, wherein a monitoring voltage is set in the gate voltage monitoring circuit to monitor a gate voltage of the power semiconductor element; a signal delay circuit to delay an output signal of the gate voltage monitoring circuit; and a gate control circuit to change the magnitude of combined resistance of the parallel circuit based on an output signal output from the signal delay circuit.
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Patent Agency Ranking
公开(公告)号：US09270111B2
公开(公告)日：2016-02-23
申请号：US13903729
申请日：2013-05-28
Applicant: Rohm Co., Ltd.
Inventor： Motohiro Ando , Akio Sasabe
IPC: H02H9/02 , H03K17/082 , H03K17/16
CPC classification number: H02H9/025 , H03K17/0822 , H03K17/166
Abstract: The load drive device of the present invention comprises a load drive unit for switching on/off output current that flows to an inductive load; and an overcurrent protection circuit for detecting whether the output current is in an overcurrent state, wherein the load drive unit has an output transistor connected to one end of the inductive load; and a pre-driver for generating a control signal of the output transistor in accordance with an input signal, and the pre-driver has a first drive unit for switching on/off the output transistor during normal operation; and a second drive unit for switching off the output transistor more slowly than the first drive unit during overcurrent protection operation.
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公开(公告)号：US11329572B2
公开(公告)日：2022-05-10
申请号：US17037150
申请日：2020-09-29
Applicant: ROHM CO., LTD.
Inventor： Motohiro Ando
Abstract: Provided is a semiconductor device that has a configuration provided with: a driving unit for driving an upper switching element and a lower switching element according to a control signal for controlling the driving of the upper switching element and the lower switching element, which are connected in series to constitute a bridge circuit; an insulating unit having an insulating transformer; and a package for sealing at least a part of the insulating unit and the driving unit. The insulating unit transmits a signal corresponding to the control signal to the driving unit side while insulating the signal.
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公开(公告)号：US10833595B2
公开(公告)日：2020-11-10
申请号：US16307398
申请日：2017-06-28
Applicant: ROHM CO., LTD.
Inventor： Motohiro Ando
Abstract: Provided is a semiconductor device that has a configuration provided with: a driving unit for driving an upper switching element and a lower switching element according to a control signal for controlling the driving of the upper switching element and the lower switching element, which are connected in series to constitute a bridge circuit; an insulating unit having an insulating transformer; and a package for sealing at least a part of the insulating unit and the driving unit. The insulating unit transmits a signal corresponding to the control signal to the driving unit side while insulating the signal.
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7.发明授权公开(公告)号：US09729150B2
公开(公告)日：2017-08-08
申请号：US14877057
申请日：2015-10-07
Applicant: Rohm Co., Ltd.
Inventor： Yuji Ishimatsu , Motohiro Ando
CPC classification number: H03K19/0016 , H03K17/162 , H03K17/163
Abstract: A power semiconductor drive circuit includes a parallel circuit connected to a gate of a power semiconductor element and constituted by two transistors for setting gate resistance of the power semiconductor element; a gate voltage monitoring circuit connected to the gate of the power semiconductor element and the parallel circuit, wherein a monitoring voltage is set in the gate voltage monitoring circuit to monitor a gate voltage of the power semiconductor element; a signal delay circuit to delay an output signal of the gate voltage monitoring circuit; and a gate control circuit to change the magnitude of combined resistance of the parallel circuit based on an output signal output from the signal delay circuit.
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公开(公告)号：US20130279047A1
公开(公告)日：2013-10-24
申请号：US13903729
申请日：2013-05-28
Applicant: Rohm Co., Ltd.
Inventor： Motohiro Ando , Akio Sasabe
IPC: H02H9/02
CPC classification number: H02H9/025 , H03K17/0822 , H03K17/166
Abstract: The load drive device of the present invention comprises a load drive unit for switching on/off output current that flows to an inductive load; and an overcurrent protection circuit for detecting whether the output current is in an overcurrent state, wherein the load drive unit has an output transistor connected to one end of the inductive load; and a pre-driver for generating a control signal of the output transistor in accordance with an input signal, and the pre-driver has a first drive unit for switching on/off the output transistor during normal operation; and a second drive unit for switching off the output transistor more slowly than the first drive unit during overcurrent protection operation.
Abstract translation: 本发明的负载驱动装置包括负载驱动单元，用于接通/关闭流向电感负载的输出电流; 以及过电流保护电路，用于检测输出电流是否处于过电流状态，其中所述负载驱动单元具有连接到所述电感性负载的一端的输出晶体管; 以及用于根据输入信号产生输出晶体管的控制信号的预驱动器，并且所述预驱动器具有用于在正常操作期间接通/关断所述输出晶体管的第一驱动单元; 以及第二驱动单元，用于在过电流保护操作期间比第一驱动单元更慢地关断输出晶体管。
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