摘要:
A method of testing chips having each a plurality of contact pads, the chips are arranged on a semiconductor wafer or on a printed circuit and are tested with a test system having a test head provided with a plurality of probes, the method comprising the steps of: a) moving the test head and the chips towards each other by a distance which is smaller than a predefined maximum length; b) determining the presence of a contact between the probes and the contact pads by performing an electrical test via the probes to yield a predetermined electrical result; and c) repeating steps a) and b) until the electrical test no longer yields the predetermined electrical result or until the predefined maximum length is reached. The invention also provides for a test system for carrying out the inventive method.
摘要:
A self test circuit provides a general statement about the condition of a coupled memory which indicates whether a wanted or unwanted manipulation or alteration of the memory has occurred. The contents of the memory are not derivable from the general statement. The general statement is preferably a "fail" or "pass" statement stating whether a deviation in the contents of the memory with respect to a last executed test has been detected or not. The testing of a non-volatile memory is executed by generating a signature from the contents of the non-volatile memory and comparing the generated signature with a reference value of the signature. When the comparison of the generated signature with the reference value indicates a different, a signal is issued and access to the non-volatile memory is restricted and/or a failure procedure is started. Access to the non-volatile memory is allowed when the comparison signature with the reference value indicates no difference. In order to allow a test of whether an alteration of the contents of the non-volatile memory has happened between successive authorized applications, a new signature from the contents of the non-volatile memory is generated after each application and stored as a new reference value.
摘要:
A system for measuring a test voltage level (Vx) in a location within a chip is presented. The system includes an on-chip measurement device with an on-chip comparator and an on-chip storage. The on-chip comparator is configured for comparing the test voltage (Vx) to be measured to a reference voltage (Vref), while the on-chip storage is configured for storing the result of this comparison. The system also includes external (off-chip) equipment for generating the reference voltage (Vref), for generating probe signals for probing the state of the storage and for retrieving the state of said on-chip storage.
摘要:
A system for measuring a test voltage level (Vx) in a location within a chip is presented. The system includes an on-chip measurement device with an on-chip comparator and an on-chip storage. The on-chip comparator is configured for comparing the test voltage (Vx) to be measured to a reference voltage (Vref), while the on-chip storage is configured for storing the result of this comparison. The system also includes external (off-chip) equipment for generating the reference voltage (Vref), for generating probe signals for probing the state of the storage and for retrieving the state of said on-chip storage.
摘要:
A method for performing a test of a high-speed integrated circuit with at least one functional unit and built-in self-test features by a low-speed test system. The method comprises the steps of transforming an external clock signal from the test system into a faster internal clock signal within the integrated circuit, generating a test pattern according to a predetermined scheme, and applying the test pattern to the functional unit, comparing a response from the functional unit with an expected test pattern. If the response differs from the expected test pattern, then an internal failure signal is generated and the internal failure signal is extended to a length, which may be recognized by the test system. Further the present invention relates to a high-speed integrated circuit with at least one functional unit and built-in self-test features.
摘要:
A digital system and method for scanning sequential logic elements are disclosed. The digital system may comprise a plurality of sequential logic elements subdivided into power domains, wherein at least one of the power domains is power gated; a scan chain configured for processing a scan data sequence; a scan enable switch configured for controlling a scan mode; and at least one shadow engine, wherein the at least one shadow engine comprises a control circuit. At least some of the power domains may be interconnected to the scan chain with the scan enable switch, and the scan enable switch may control the scan mode by asserting a scan enable signal. The at least one power gated power domain with one or more sequential logic elements to be power gated may be bypassed via the at least one shadow engine.
摘要:
A method for performing a test of a high-speed integrated circuit with at least one functional unit and built-in self-test features by a low-speed test system. The method comprises the steps of transforming an external clock signal from the test system into a faster internal clock signal within the integrated circuit, generating a test pattern according to a predetermined scheme, and applying the test pattern to the functional unit, comparing a response from the functional unit with an expected test pattern. If the response differs from the expected test pattern, then an internal failure signal is generated and the internal failure signal is extended to a length, which may be recognized by the test system. Further the present invention relates to a high-speed integrated circuit with at least one functional unit and built-in self-test features.
摘要:
In a first aspect, a method is provided that includes the steps of (1) receiving a circuit design having a plurality of latches; and (2) allowing one or more latches of the circuit design to be locally treated as exhibiting latch transparency during modeling of the timing behavior of the circuit design. Numerous other aspects are provided.
摘要:
A multiport array comprises a read section which is separated from an array of memory cells and which forms a plurality of data-out ports each consisting of a predetermined number of output lines. The read section comprises a multiplex network containing a plurality of multiplex arrays each associated with one of the data-out ports (0,1, . . . ,15). The multiplex arrays are connected to the data read lines of the memory cells and are selected by read addresses. The multiplex arrays comprise transmission elements which connect selected ones of the data read lines to the associated data-out port.
摘要:
A multiport memory cell having a reduced number of write wordlines is disclosed. The multiport memory cell capable of simultaneously reading data from and writing data to a storage cell comprises a storage cell for storing data, a decoder, write wordlines, write bitlines, read wordlines, and read bitlines. The write wordlines and the write bitlines are utilized to input write data into the storage cell. The read wordlines and the read bitlines are utilized to output data from the storage cell. The write bitlines are directly coupled to the storage cell, and some or all of the write wordlines are coupled to the storage cell via the decoder for the purpose of wire reduction. Similar to the write bitlines, all the read bitlines and read wordlines are directly coupled to the storage cell.