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    Control of liner thickness for improving thermal cycle reliability
    1.
    发明申请
    Control of liner thickness for improving thermal cycle reliability 失效
    控制衬套厚度，提高热循环的可靠性

    公开(公告)号：US20050227380A1

    公开(公告)日：2005-10-13

    申请号：US10815418

    申请日：2004-04-01

    申请人： Ronald Filippi ,  Lynne Gignac ,  Vincent McGahay ,  Conal Murray ,  Hazara Rathore ,  Thomas Shaw ,  Ping-Chuan Wang

    发明人： Ronald Filippi ,  Lynne Gignac ,  Vincent McGahay ,  Conal Murray ,  Hazara Rathore ,  Thomas Shaw ,  Ping-Chuan Wang

    IPC分类号： G06F13/28

    CPC分类号： G01R31/2881

    摘要： A device, system and method for evaluating reliability of a semiconductor chip are disclosed. Strain is determined at a location of interest in a structure. Failures are evaluated in a plurality of the structures after stress cycling to determine a strain threshold with respect to a feature characteristic. Structures on a chip or chips are evaluated based on the feature characteristic to predict reliability based on the strain threshold and the feature characteristic. Predictions and design changes may be made based on the results.

    摘要翻译： 公开了一种用于评估半导体芯片的可靠性的装置，系统和方法。 在结构中感兴趣的位置确定菌株。 在应力循环之后，在多个结构中评估失效以确定关于特征特征的应变阈值。 基于特征特征评估芯片或芯片上的结构，以基于应变阈值和特征特征来预测可靠性。 可以根据结果进行预测和设计更改。

    On-chip Cu interconnection using 1 to 5 nm thick metal cap
    6.
    发明申请
    On-chip Cu interconnection using 1 to 5 nm thick metal cap 有权
    使用1至5nm厚的金属帽的片上Cu互连

    公开(公告)号：US20060160350A1

    公开(公告)日：2006-07-20

    申请号：US11037970

    申请日：2005-01-18

    申请人： John Bruley ,  Roy Carruthers ,  Lynne Gignac ,  Chao-Kun Hu ,  Eric Liniger ,  Sandra Malhotra ,  Stephen Rossnagel

    发明人： John Bruley ,  Roy Carruthers ,  Lynne Gignac ,  Chao-Kun Hu ,  Eric Liniger ,  Sandra Malhotra ,  Stephen Rossnagel

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76849 ,  H01L21/76829 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： Disclosed is a procedure to coat the free surface of Cu damascene lines by a 1-5 nm thick element prior to deposition of the inter-level dielectric or dielectric diffusion barrier layer. The coating provides protection against oxidation, increases the adhesion strength between the Cu and dielectric, and reduces interface diffusion of Cu. In addition, the thin cap layer further increases electromigration Cu lifetime and reduces the stress induced voiding. The selective elements can be directly deposited onto the Cu embedded within the under layer dielectric without causing an electric short circuit between the Cu lines. These chosen elements are based on their high negative reduction potentials with oxygen and water, and a low solubility in and formation of compounds with Cu.

    摘要翻译： 公开了在沉积层间电介质或电介质扩散阻挡层之前，通过1-5nm厚的元件涂覆Cu镶嵌线的自由表面的步骤。 涂层提供防氧化保护，增加Cu和介电层之间的粘合强度，并减少Cu的界面扩散。 此外，薄盖层进一步增加电迁移Cu寿命，并减少应力引起的空隙。 选择元件可以直接沉积在嵌入在下层电介质中的Cu上，而不会在Cu线之间引起电短路。 这些选择的元素是基于它们具有氧和水的高的负还原电位，以及与Cu的化合物的低溶解度和形成。