公开(公告)号：US20110042349A1

公开(公告)日：2011-02-24

申请号：US12544998

申请日：2009-08-20

申请人： Ronghui ZHOU ,  Ming JIANG ,  Xiaohai XIANG ,  Jinwen WANG ,  Guanghong LUO ,  Yun-Fei LI

发明人： Ronghui ZHOU ,  Ming JIANG ,  Xiaohai XIANG ,  Jinwen WANG ,  Guanghong LUO ,  Yun-Fei LI

IPC分类号： B44C1/22 ,  B05D5/12

CPC分类号： G11B5/855 ,  Y10T29/49048

摘要： A method for forming a write pole comprises forming a stop layer over a substrate layer of a wafer, the stop layer having an opening above a damascene trench in the substrate layer, and forming a buffer layer over the stop layer, the buffer layer having an opening above the opening of the stop layer. The method further comprises plating a layer of magnetic material over the wafer, disposing a first sacrificial material over a region of the magnetic material above the damascene trench, performing a milling or etching operation over the wafer to remove the magnetic material not covered by the first sacrificial material and to remove the first sacrificial material, disposing a second sacrificial material over the wafer, and performing a polishing operation over the wafer to remove the region of the magnetic material above the damascene trench, the second sacrificial material, and the buffer layer.

摘要翻译： 用于形成写极的方法包括在晶片的衬底层上形成阻挡层，所述阻挡层在衬底层中具有在镶嵌沟槽上方的开口，以及在停止层上形成缓冲层，所述缓冲层具有 在停止层的开口上方开口。 该方法还包括在晶片上镀覆一层磁性材料，在金刚石沟槽上方的磁性材料的区域上设置第一牺牲材料，在晶片上进行研磨或蚀刻操作，以去除第一 牺牲材料并且去除第一牺牲材料，在晶片上设置第二牺牲材料，以及在晶片上执行抛光操作以去除镶嵌沟槽，第二牺牲材料和缓冲层之上的磁性材料的区域。