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    Magnetron design for RF/DC physical vapor deposition
    1.
    发明授权
    Magnetron design for RF/DC physical vapor deposition 有权
    用于RF / DC物理气相沉积的磁控管设计

    公开(公告)号：US08580094B2

    公开(公告)日：2013-11-12

    申请号：US13163817

    申请日：2011-06-20

    申请人： Rongjun Wang ,  Sally Lou ,  Muhammad Rasheed ,  Jianxin Lei ,  Xianmin Tang ,  Srinivas Gandikota ,  Ryan Hanson ,  Tza-Jing Gung ,  Keith A. Miller ,  Thanh X. Nguyen

    发明人： Rongjun Wang ,  Sally Lou ,  Muhammad Rasheed ,  Jianxin Lei ,  Xianmin Tang ,  Srinivas Gandikota ,  Ryan Hanson ,  Tza-Jing Gung ,  Keith A. Miller ,  Thanh X. Nguyen

    IPC分类号： C23C14/35

    CPC分类号： C23C14/35 ,  H01J37/3408 ,  H01J37/345 ,  H01J37/3461

    摘要： Methods and apparatus to improve target life and deposition uniformity in PVD chambers are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis, the shunt plate rotatable about the central axis, a first open loop magnetic pole arc coupled to the shunt plate at a first radius from the central axis, and a second open loop magnetic pole arc coupled the shunt plate at a first distance from the first open loop magnetic pole arc, wherein at least one of the first radius varies along the first open loop magnetic pole arc or the first distance varies along the second open loop magnetic pole arc. In some embodiments, a first polarity of the first open loop magnetic pole arc opposes a second polarity of the second open loop magnetic pole arc.

    摘要翻译： 本文提供了改善PVD室中的目标寿命和沉积均匀性的方法和装置。 在一些实施例中，磁控管组件包括具有中心轴线的分流板，分流板可围绕中心轴线旋转，第一开环磁极电弧在与中心轴线成第一半径处耦合到分流板，第二开路 环形磁极以与第一开环磁极弧成第一距离的方式将分流板电弧耦合，其中第一半径中的至少一个沿第一开环磁极弧变化，或者第一距离沿第二开环磁极变化 弧。 在一些实施例中，第一开环磁极的第一极性与第二开环磁极的第二极性相反。

    DEPOSITION RING AND ELECTROSTATIC CHUCK FOR PHYSICAL VAPOR DEPOSITION CHAMBER
    6.
    发明申请
    DEPOSITION RING AND ELECTROSTATIC CHUCK FOR PHYSICAL VAPOR DEPOSITION CHAMBER 有权
    用于物理蒸气沉积室的沉积环和静电吸盘

    公开(公告)号：US20120103257A1

    公开(公告)日：2012-05-03

    申请号：US13280771

    申请日：2011-10-25

    申请人： Muhammad Rasheed ,  Keith A. Miller ,  Rongjun Wang

    发明人： Muhammad Rasheed ,  Keith A. Miller ,  Rongjun Wang

    IPC分类号： C23C16/458 ,  C23C16/04 ,  C23C16/44

    CPC分类号： C23C14/50 ,  C23C14/3407 ,  C23C14/564 ,  C23C16/4585 ,  H01L21/68735

    摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.

    摘要翻译： 本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。 更具体地，本文所述的实施例涉及包括沉积环和基座组件的处理套件。 处理套件的组件单独工作，并且组合工作，以显着降低其在处理期间对基板周围的电场的影响。

    Substrate processing system having symmetric RF distribution and return paths
    8.
    发明授权
    Substrate processing system having symmetric RF distribution and return paths 有权
    基板处理系统具有对称的RF分布和返回路径

    公开(公告)号：US09255322B2

    公开(公告)日：2016-02-09

    申请号：US13436776

    申请日：2012-03-30

    申请人： Donny Young ,  Alan Ritchie ,  Muhammad Rasheed ,  Keith A. Miller

    发明人： Donny Young ,  Alan Ritchie ,  Muhammad Rasheed ,  Keith A. Miller

    IPC分类号： C23C14/34 ,  H01J37/32 ,  C23C14/35 ,  H01J37/34

    CPC分类号： C23C14/3407 ,  C23C14/35 ,  H01J37/32577 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3414

    摘要： A processing system may include a target having a central axis normal thereto; a source distribution plate having a target facing side opposing a backside of the target, wherein the source distribution plate includes a plurality of first features such that a first distance of a first radial RF distribution path along a given first diameter is about equal to a second distance of an opposing second radial RF distribution path along the given first diameter; and a ground plate opposing a target opposing side of the source distribution plate and having a plurality of second features disposed about the central axis and corresponding to the plurality of first features, wherein a third distance of a first radial RF return path along a given second diameter is about equal to a fourth distance of an opposing second radial RF return path along the given second diameter.

    摘要翻译： 处理系统可以包括具有与其正交的中心轴的目标; 源分布板，其具有与所述靶的背面相对的目标面对侧，其中所述源分配板包括多个第一特征，使得沿着给定第一直径的第一径向RF分配路径的第一距离大约等于第二特征 沿着给定的第一直径的相对的第二径向RF分配路径的距离; 以及与所述源分配板的目标相对侧相对的并且具有围绕所述中心轴线设置并对应于所述多个第一特征的多个第二特征的接地板，其中沿着给定的第二部分的第一径向RF返回路径的第三距离 直径约等于沿着给定的第二直径的相对的第二径向RF返回路径的第四距离。

    Substrate processing system with mechanically floating target assembly
    9.
    发明授权
    Substrate processing system with mechanically floating target assembly 有权
    具有机械浮动目标组件的基板处理系统

    公开(公告)号：US09303311B2

    公开(公告)日：2016-04-05

    申请号：US13435949

    申请日：2012-03-30

    申请人： Donny Young ,  Alan Ritchie ,  Uday Pai ,  Muhammad Rasheed ,  Keith A. Miller

    发明人： Donny Young ,  Alan Ritchie ,  Uday Pai ,  Muhammad Rasheed ,  Keith A. Miller

    IPC分类号： C23C14/24 ,  C23C14/34 ,  H01J37/34 ,  C23C14/35

    CPC分类号： C23C14/3407 ,  C23C14/35 ,  H01J37/3417 ,  H01J37/3435

    摘要： Substrate processing systems are provided herein. In some embodiments, a substrate processing system may include a target assembly having a target comprising a source material to be deposited on a substrate; a grounding assembly disposed about the target assembly and having a first surface that is generally parallel to and opposite a backside of the target assembly; a support member coupled to the grounding assembly to support the target assembly within the grounding assembly; one or more insulators disposed between the backside of the target assembly and the first surface of the grounding assembly; and one or more biasing elements disposed between the first surface of the grounding assembly and the backside of the target assembly to bias the target assembly toward the support member.

    摘要翻译： 本文提供基板处理系统。 在一些实施例中，衬底处理系统可以包括目标组件，其具有包含待沉积在衬底上的源材料的靶; 设置在所述目标组件周围并且具有大致平行于所述目标组件的背面并相对于所述目标组件的后侧的第一表面的接地组件; 联接到所述接地组件以将所述目标组件支撑在所述接地组件内的支撑构件; 设置在目标组件的背面与接地组件的第一表面之间的一个或多个绝缘体; 以及设置在接地组件的第一表面和目标组件的后侧之间的一个或多个偏置元件，以将目标组件朝向支撑构件偏压。

    Apparatus for enabling concentricity of plasma dark space
    10.
    发明授权
    Apparatus for enabling concentricity of plasma dark space 有权
    用于实现等离子体暗室的同心度的装置

    公开(公告)号：US08702918B2

    公开(公告)日：2014-04-22

    申请号：US13327689

    申请日：2011-12-15

    申请人： Alan Ritchie ,  Donny Young ,  Keith A. Miller ,  Muhammad Rasheed ,  Steve Sansoni ,  Uday Pai

    发明人： Alan Ritchie ,  Donny Young ,  Keith A. Miller ,  Muhammad Rasheed ,  Steve Sansoni ,  Uday Pai

    IPC分类号： C23C14/56

    CPC分类号： C23C14/34 ,  H01J37/3417 ,  H01J37/3423 ,  H01J37/3435 ,  H01J37/3441

    摘要： In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.

    摘要翻译： 在一些实施例中，衬底处理装置可以包括腔体; 设置在所述室主体顶部的盖子; 耦合到所述盖的目标组件，所述目标组件包括待沉积在衬底上的材料的靶; 环形暗空间屏蔽，其具有围绕靶的外边缘设置的内壁; 邻近所述暗室屏蔽的外边缘设置的密封环; 以及支撑构件，其紧邻所述支撑构件的外端并且径向向内延伸，使得所述支撑构件支撑所述密封环和所述环形暗空间屏蔽，其中所述支撑构件在联接到所述盖时提供足够的压缩，使得 在支撑构件和密封环以及密封环和目标组件之间形成密封件。