利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

21 条记录 (耗时 0.037 秒)

    Method for forming an infrared detector having a refractory metal
    2.
    发明授权
    Method for forming an infrared detector having a refractory metal 失效
    形成具有难熔金属的红外检测器的方法

    公开(公告)号：US5188970A

    公开(公告)日：1993-02-23

    申请号：US865595

    申请日：1992-04-09

    申请人： Rudy L. York ,  Joseph D. Luttmer ,  Chang F. Wan ,  Thomas W. Orent ,  Larry D. Hutchins ,  Art Simmons

    发明人： Rudy L. York ,  Joseph D. Luttmer ,  Chang F. Wan ,  Thomas W. Orent ,  Larry D. Hutchins ,  Art Simmons

    IPC分类号： H01L31/113

    CPC分类号： H01L31/113

    摘要： Method of manufacturing an infrared detector having a refractory metal (16) within the metal-insulator-semiconductor structure (MIS) provides a process applicable for high volume production of infrared focal plane array detectors. The process of the present invention uses a refractory metal such as tantalum as the gate (16) which is less susceptible to the etching by the bromine solution used to etch the vias (22) as compared to aluminum. Additionally, the etching of the refractory metal film to form the MIS structure can be done with a fluorine-containing plasma, thus avoiding the corrosion of the metal associated with etching aluminum metal films in a chlorine-containing plasma.

    摘要翻译： 在金属 - 绝缘体 - 半导体结构（MIS）内制造具有难熔金属（16）的红外检测器的方法提供了适用于大量生产红外焦平面阵列检测器的方法。 本发明的方法使用诸如钽的难熔金属作为栅极（16），与铝相比，其不利于用于蚀刻通孔（22）的溴溶液的蚀刻。 此外，可以用含氟等离子体进行难熔金属膜的蚀刻以形成MIS结构，从而避免与含氯等离子体中的蚀刻铝金属膜相关的金属的腐蚀。

    Method for dry etching openings in integrated circuit layers
    3.
    发明授权
    Method for dry etching openings in integrated circuit layers 失效
    集成电路层干蚀刻开孔方法

    公开(公告)号：US5157000A

    公开(公告)日：1992-10-20

    申请号：US652506

    申请日：1991-02-08

    申请人： Jerome L. Elkind ,  Patricia B. Smith ,  Larry D. Hutchins ,  Joseph D. Luttmer ,  Rudy L. York ,  Julie S. England

    发明人： Jerome L. Elkind ,  Patricia B. Smith ,  Larry D. Hutchins ,  Joseph D. Luttmer ,  Rudy L. York ,  Julie S. England

    IPC分类号： H01L21/465 ,  H01L21/467 ,  H01L21/4757

    CPC分类号： H01L21/465 ,  H01L21/467 ,  H01L21/47573 ,  Y10S148/051

    摘要： A process is disclosed through which vias (50) can be formed by the reaction of an etchant species (52) with a mercury cadmium telluride (HgCdTe) or zinc sulfide (ZnS) layer (42). The activating gases (20) are preferably a hydrogen gas or a methane gas which is excited in a diode plasma reactor (100) which has an RF power source (13) applied to one of two parallel electrodes. The etching occurs in selected areas in a photoresist pattern (44) residing over the ZnS or HgCdTe layer (42). Wet etching the layer (42) with a wet etchant (54) following the dry etching, improves the via (50) by making the walls (48) smoother, and allowing for expansion of the vias (50) to a dimension necessary for proper operation of a HgCdTe-based infrared detector.

    摘要翻译： 公开了通过蚀刻剂物质（52）与碲化汞镉（HgCdTe）或硫化锌（ZnS）层（42）的反应可以形成通孔（50）的方法。 活性气体（20）优选为在二次电等离子体反应器（100）中激发的氢气或甲烷气体，二极管等离子体反应器（100）具有施加到两个平行电极之一的RF电源（13）。 蚀刻发生在驻留在ZnS或HgCdTe层（42）上的光致抗蚀剂图案（44）中的选定区域中。 在干蚀刻之后用湿蚀刻剂（54）湿蚀刻层（42），通过使壁（48）更平滑并允许将通孔（50）膨胀到适当的尺寸所需的尺寸来改善通孔（50） 基于HgCdTe的红外探测器的运行。

    Wafer processing apparatus having independently controllable energy sources
    8.
    发明授权
    Wafer processing apparatus having independently controllable energy sources 失效
    具有独立可控能量源的晶片处理装置

    公开(公告)号：US5138973A

    公开(公告)日：1992-08-18

    申请号：US282917

    申请日：1988-12-05

    申请人： Cecil J. Davis ,  Rhett B. Jucha ,  Joseph D. Luttmer ,  Rudy L. York ,  Lee M. Loewenstein ,  Robert T. Matthews ,  Randall C. Hildenbrand

    发明人： Cecil J. Davis ,  Rhett B. Jucha ,  Joseph D. Luttmer ,  Rudy L. York ,  Lee M. Loewenstein ,  Robert T. Matthews ,  Randall C. Hildenbrand

    IPC分类号： C23C16/48 ,  C23C16/517 ,  C23C16/54

    CPC分类号： C23C16/482 ,  C23C16/517 ,  C23C16/54

    摘要： A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer and controlled independent of the in situ plasma. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator is usefully included between the ultraviolet plasma space and the processing space near the wafer face, so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face.

    摘要翻译： 一种处理装置和方法，其中晶片暴露于由与晶片分离的第一等离子体产生的活化物质，但处于晶片上游的处理气流中，并且还暴露于由第二等离子体产生的等离子体轰击 其具有基本上邻接晶片表面的暗空间。 原位等离子体功率相对较低，远距离等离子体可以产生活化物质，因此可以调整原位等离子体功率水平以优化等离子体轰击。 照亮正在处理的晶片的表面的紫外线是通过等离子体产生的，该等离子体位于真空室内，但远离晶片的表面并独立于原位等离子体进行控制。 设计气体流动系统是有用的，使得紫外线发生等离子体具有其自身的气体进料，并且来自紫外线发生等离子体的反应产物基本上不流动或扩散到晶片面。 紫外等离子体空间与晶片表面附近的处理空间有效地包含透明隔离器，使得紫外线等离子体能够在与晶片面附近使用的真空度稍微不同的真空度下工作。