Photosensitive composition
    1.
    发明授权
    Photosensitive composition 失效
    感光组合物

    公开(公告)号:US5063134A

    公开(公告)日:1991-11-05

    申请号:US455783

    申请日:1990-01-02

    摘要: A photosensitive composition contains a polymer having a unit represented by formula I, and a photosensitive agent: ##STR1## wherein each of R.sub.1 to R.sub.4 represents a hydrogen atom, an alkyl group, an alkoxyl group, or a substituted or non-substituted allyl group, at least one of R.sub.1 to R.sub.4 being an alkyl groups having 1 to 10 carbon atoms and containing silicon, l represents a positive integer, and each of a and b represents an integer from 1 to 3, and c represents an integer from 0 to 2, a+b+c not exceeding 4.

    摘要翻译: 感光性组合物含有具有式I表示的单元的聚合物和光敏剂:其中R 1〜R 4各自表示氢原子,烷基,烷氧基或取代或未取代的光敏剂, 取代的烯丙基,R 1至R 4中的至少一个为具有1至10个碳原子且含有硅的烷基,l表示正整数,a和b各自表示1至3的整数,c表示整数 从0到2,a + b + c不超过4。

    Polysilanes, Polysiloxanes and silicone resist materials containing
these compounds
    5.
    发明授权
    Polysilanes, Polysiloxanes and silicone resist materials containing these compounds 失效
    聚硅烷,聚硅氧烷和含有这些化合物的硅氧烷抗蚀材料

    公开(公告)号:US4822716A

    公开(公告)日:1989-04-18

    申请号:US938874

    申请日:1986-12-08

    摘要: The polysilanes and polysiloxanes of the present invention are polymers that contain silicon in the principal chain, and contain in the side chains alkaline soluble groups such as phenol-based hydroxy group and carboxyl group.One silicone resist material of the present invention comprises the polysilane or the polysiloxane in the above.Another silicone resist material of the present invention contains the above polysilane or polysiloxane, and an appropriate photosensitive agent.Still another silicone resist material of the present invention does not contain the above photosensitive agent, and in its stead, it contains a group that possesses photosensitive to ultraviolet rays or the like, via a siloxane bonding in the principal chain. As a substance with such photosensitivity, one may mention, for example, o-nitrobenzylsilyl groups that presents alkaline solubility when it is irradiated by ultraviolet rays.Accordingly, the silicone resist materials of the present invention, especially the second and third silicone resist materials, are alkaline developable, and also possess a superior resistance to oxygen plasma. Therefore, they can be used as a top layer film in the two-layered resist system, making it possible to form very fine resist patterns, fast and with a minimum number of processing steps.

    摘要翻译: 本发明的聚硅烷和聚硅氧烷是在主链中含有硅并且在侧链中含有碱性可溶性基团如苯酚基羟基和羧基的聚合物。 本发明的一种硅氧烷抗蚀剂材料包含上述聚硅烷或聚硅氧烷。 本发明的另一种硅氧烷抗蚀剂材料含有上述聚硅烷或聚硅氧烷和适当的感光剂。 本发明的另一种硅氧烷抗蚀剂材料不含上述光敏剂,代替其中含有通过主链中的硅氧烷键具有紫外线等感光性的基团。 作为具有这种光敏性的物质,可以提及例如当用紫外线照射时呈现碱溶性的邻硝基苄基甲硅烷基。 因此,本发明的有机硅抗蚀剂材料,特别是第二和第三有机硅抗蚀剂材料是碱显影的,并且还具有优异的耐氧等离子体性。 因此,它们可以用作双层抗蚀剂系统中的顶层膜,使得可以形成非常精细的抗蚀剂图案,并且具有最少数量的加工步骤。

    Polysilanes, polysiloxanes and silicone resist materials containing
these compounds
    6.
    发明授权
    Polysilanes, polysiloxanes and silicone resist materials containing these compounds 失效
    含有这些化合物的聚硅烷,聚硅氧烷和硅氧烷抗蚀材料

    公开(公告)号:US5198520A

    公开(公告)日:1993-03-30

    申请号:US673185

    申请日:1991-03-21

    摘要: The polysilanes and polysiloxanes of the present invention are polymers that contain silicon in the principal chain, and contain in the side chains alkaline soluble groups such as phenol-based hydroxy group and carboxyl group.One silicone resist material of the present invention comprises the polysilane or the polysiloxane in the above.Another silicone resist material of the present invention contains the above polysilane or polysiloxane, and an appropriate photosensitive agent.Still another silicone resist material of the present invention does not contain the above photosensitive agent, and in its stead, it contains a group that possesses photosensitive to ultraviolet rays or the like, via a siloxane bonding in the principal chain. As a substance with such photosensitivity, one may mention, for example, o-nitrobenzylsilyl groups that presents alkaline solubility when it is irradiated by ultraviolet rays.Accordingly, the silicone resist materials of the present invention, especially the second and third silicone resist materials, are alkaline developable, and also possess a superior resistance to oxygen plasma. Therefore, they can be used as a top layer film in the two-layered resist system, making it possible to form very fine resist patterns, fast and with a minimum number of processing steps.

    摘要翻译: 本发明的聚硅烷和聚硅氧烷是在主链中含有硅并且在侧链中含有碱性可溶性基团如苯酚基羟基和羧基的聚合物。 本发明的一种硅氧烷抗蚀剂材料包含上述聚硅烷或聚硅氧烷。 本发明的另一种硅氧烷抗蚀剂材料含有上述聚硅烷或聚硅氧烷和适当的感光剂。 本发明的另一种硅氧烷抗蚀剂材料不含上述光敏剂,代替其中含有通过主链中的硅氧烷键具有紫外线等感光性的基团。 作为具有这种光敏性的物质,可以提及例如当用紫外线照射时呈现碱溶性的邻硝基苄基甲硅烷基。 因此,本发明的有机硅抗蚀剂材料,特别是第二和第三有机硅抗蚀剂材料是碱显影的,并且还具有优异的耐氧等离子体性。 因此,它们可以用作双层抗蚀剂系统中的顶层膜,使得可以形成非常精细的抗蚀剂图案,并且具有最少数量的加工步骤。

    A silicone resist materials containing a polysiloxane and a
photo-sensitive agent
    7.
    发明授权
    A silicone resist materials containing a polysiloxane and a photo-sensitive agent 失效
    含有聚硅氧烷和光敏剂的硅氧烷抗蚀剂材料

    公开(公告)号:US5017453A

    公开(公告)日:1991-05-21

    申请号:US304231

    申请日:1989-01-31

    摘要: The polysilanes and polysiloxanes of the present invention are polymers that contain silicon in the principal chain, and contain in the side chains alkaline soluble groups such as phenol-based hydroxy group and carboxyl group.One silicone resist material of the present invention comprises the polysilane or the polysiloxane in the above.Another silicone resist material of the present invention contains the above polysilane or polysiloxane, and an appropriate photosensitive agent.Still another silicone resist material of the present invention does not contain the above photosensitive agent, and in its stead, it contains a group that possesses photosensitive to ultraviolet rays or the like, via a siloxane bonding in the principal chain. As a substance with such photosensitivity, one may mention, for example, o-nitrogenzylsilyl groups that presents alkaline solubility when it is irradiated by ultraviolet rays.Accordingly, the silicone resist materials of the present invention, especially the second and third silicone resist materials, are alkaline developable, and also possess a superior resistance to oxygen plasma. Therefore, they can be used as a top layer film in the two-layered resist system, making it possible to form very fine resist patterns, fast and with a minimum number of processing steps.