CONTROL DEVICE AND CONTROL METHOD FOR MULTI-CYLINDER INTERNAL COMBUSTION ENGINE
    2.
    发明申请
    CONTROL DEVICE AND CONTROL METHOD FOR MULTI-CYLINDER INTERNAL COMBUSTION ENGINE 有权
    多缸内燃机的控制装置及控制方法

    公开(公告)号:US20150046066A1

    公开(公告)日:2015-02-12

    申请号:US14382342

    申请日:2013-03-05

    IPC分类号: F02D41/00 F02D41/30

    摘要: An electronic control unit, in an idle operating state, detects a crankshaft rotation fluctuation in each cylinder using a crank angle sensor, and updates an individual correction value for a control value for each fuel injection valve as a first learned value such that a degree of deviation in the crankshaft rotation fluctuation among the cylinders reduces. The electronic control unit uses a fuel pressure sensor to detect a manner of a fuel pressure fluctuation with fuel injection by each fuel injection valve, and updates an individual correction value for a control value for each fuel injection valve as a second learned value based on a result of comparison between a detected temporal waveform and a basic temporal waveform. In an idle operating state, a learning rate of the second learned value is reduced until the first learned value converges for the first time as compared with after its convergence.

    摘要翻译: 一种电子控制单元,在怠速运转状态下,利用曲轴转角传感器检测各气缸的曲轴旋转波动,并将每个燃料喷射阀的控制值的各个校正值更新为第一学习值, 气缸之间曲轴旋转波动的偏差减小。 电子控制单元使用燃料压力传感器,通过各燃料喷射阀的燃料喷射来检测燃料压力波动的方式,并且,将基于每个燃料喷射阀的每个燃料喷射阀的控制值的各个校正值作为第二学习值更新 检测到的时间波形与基本时间波形之间的比较结果。 在空闲运行状态下,减少第二学习值的学习率,直到第一学习值与收敛后相比第一次收敛为止为止。

    FUEL INJECTION CONTROL DEVICE AND FUEL INJECTION CONTROL METHOD FOR INTERNAL COMBUSTION ENGINE
    3.
    发明申请
    FUEL INJECTION CONTROL DEVICE AND FUEL INJECTION CONTROL METHOD FOR INTERNAL COMBUSTION ENGINE 有权
    燃油喷射控制装置和内燃机燃油喷射控制方法

    公开(公告)号:US20150019110A1

    公开(公告)日:2015-01-15

    申请号:US14383240

    申请日:2013-03-05

    IPC分类号: F02D41/36

    摘要: An electronic control unit detects a manner of fluctuation of a fuel pressure with injection of fuel by a fuel injection valve with the use of a fuel pressure sensor, and calculates a tendency of deviation of an actual fuel injection characteristic of the fuel injection valve with respect to a basic fuel injection characteristic on the basis of a result of comparison between a detected temporal waveform and a basic temporal waveform. The tendency of deviation is reflected at a predetermined reflection rate (R) at the time of updating a learned value (Gij) for compensating for an individual difference of the fuel injection valve. The predetermined reflection rate (R) is increased when an accumulated value (D) of a vehicle travel distance is shorter than a predetermined value (Dth) as compared with when the accumulated value (D) is longer than or equal to the predetermined value (Dth).

    摘要翻译: 电子控制单元通过使用燃料压力传感器由燃料喷射阀喷射燃料来检测燃料压力的波动的方式,并且计算燃料喷射阀的实际燃料喷射特性相对于 基于检测到的时间波形与基本时间波形之间的比较结果,获得基本的燃料喷射特性。 在更新用于补偿燃料喷射阀的个体差异的学习值(Gij)时,以预定的反射率(R)反映偏差的趋势。 与当累积值(D)大于或等于预定值(D)相比,当车辆行驶距离的累积值(D)小于预定值(Dth)时,预定反射率(R)增加 Dth)。

    Polycrystalline silicon wafer
    5.
    发明授权
    Polycrystalline silicon wafer 有权
    多晶硅片

    公开(公告)号:US08987737B2

    公开(公告)日:2015-03-24

    申请号:US14003388

    申请日:2012-03-08

    摘要: Provided is a polycrystalline silicon wafer produced by a melting and unidirectional solidification method, where the polycrystalline silicon wafer has a diameter of 450 mm or more, a thickness of 900 μm or more, and an average crystal grain size of 5 to 50 mm, and is made up of one piece. The present invention provides a large-sized polycrystalline silicon wafer having a wafer size of 450 mm or more, of which: mechanical properties are similar to those of monocrystalline silicon wafers; the crystal size is large; the surface roughness is low; the surface has a high cleanliness; the polished surface has less unevenness by having a definite crystal orientation; and the sag value is similar to that of monocrystalline silicon wafers.

    摘要翻译: 提供了一种通过熔融和单向凝固方法制造的多晶硅晶片,其中多晶硅晶片的直径为450mm以上,厚度为900μm以上,平均晶粒尺寸为5〜50mm, 由一件组成。 本发明提供了具有450mm以上的晶片尺寸的大尺寸多晶硅晶片,其中:机械性能类似于单晶硅晶片; 晶体尺寸大; 表面粗糙度低; 表面清洁度高; 通过具有确定的晶体取向,抛光表面具有较小的不均匀性; 并且下垂值与单晶硅晶片相似。

    COMPOSITIONS AND METHODS FOR THE TREATMENT OF NERVOUS DISORDERS ASSOCIATED WITH DIABETES
    6.
    发明申请
    COMPOSITIONS AND METHODS FOR THE TREATMENT OF NERVOUS DISORDERS ASSOCIATED WITH DIABETES 审中-公开
    用于治疗与糖尿病有关的神经疾病的组合物和方法

    公开(公告)号:US20140194353A1

    公开(公告)日:2014-07-10

    申请号:US13990523

    申请日:2011-11-29

    IPC分类号: A61K38/28 G01N33/53

    CPC分类号: A61K38/28 G01N33/53

    摘要: Compositions and methods for treating neural dysfunction. A exemplary method comprises administering to a subject having a neuropathy, e.g., a cognitive dysfunction or Alzheimer's, a therapeutically effective amount of an insulin or insulin analog, wherein the insulin or insulin analog crosses the BBB and/or a compound that increases SREBP-2 expression or activity in the CNS of the subject.

    摘要翻译: 治疗神经功能障碍的组合物和方法。 一种示例性方法包括对具有神经病,例如认知功能障碍或阿尔茨海默病的受试者施用治疗有效量的胰岛素或胰岛素类似物,其中胰岛素或胰岛素类似物穿过BBB和/或增加SREBP-2的化合物 表达或活动在CNS的主题。

    Hybrid silicon wafer
    7.
    发明授权
    Hybrid silicon wafer 有权
    混合硅片

    公开(公告)号:US08512868B2

    公开(公告)日:2013-08-20

    申请号:US13499304

    申请日:2010-10-28

    IPC分类号: B32B9/04 B32B13/04 C01B33/02

    摘要: A hybrid silicon wafer which is a silicon wafer having a structure wherein the main plane orientation of polycrystalline silicon that is prepared by a unidirectional solidification/melting method is (311), and monocrystalline silicon is embedded in the polycrystalline silicon. The hybrid silicon wafer according to any one of claims 1 to 6, wherein the purity of the polycrystalline silicon portion excluding gas components is 6N or higher, the total amount of metal impurities is 1 wtppm or less, and, among the metal impurities, Cu, Fe, Ni, and Al are respectively 0.1 wtppm or less. Thus, a hybrid silicon wafer having the functions of both a polycrystalline silicon wafer and a monocrystalline silicon wafer is provided and the occurrence of polish bumps and macro-sized unevenness between the polycrystalline silicon and the monocrystalline silicon are prevented.

    摘要翻译: 具有以下结构的硅晶片的混合硅晶片,其中通过单向凝固/熔融法制备的多晶硅的主平面取向为(311),单晶硅嵌入多晶硅中。 7.根据权利要求1〜6中任一项所述的复合硅晶片,其特征在于,除了气体成分以外的多晶硅部分的纯度为6N以上,金属杂质的总量为1重量ppm以下,在金属杂质中,Cu ,Fe,Ni,Al分别为0.1重量ppm以下。 因此,提供了具有多晶硅晶片和单晶硅晶片的功能的混合硅晶片,并且防止了多晶硅和单晶硅之间的抛光凸起和宏观尺寸的不均匀性的出现。

    VEHICLE ENGINE CONTROL DEVICE
    8.
    发明申请
    VEHICLE ENGINE CONTROL DEVICE 有权
    车用发动机控制装置

    公开(公告)号:US20130196820A1

    公开(公告)日:2013-08-01

    申请号:US13818004

    申请日:2010-08-20

    IPC分类号: B60W10/02 B60W10/06

    摘要: A vehicle engine control device stopping fuel injection if a predetermined fuel cut condition is satisfied, is provided, during running with the fuel injection stopped, when inertia of a power transmission system rotating with the engine has a smaller rate of inertia of the power transmission system acting on rotation of an output shaft of the engine, the fuel injection being started at a lower engine rotation speed as compared to the case of a larger rate of inertia of the power transmission system acting on rotation of the output shaft of the engine, a clutch capable of connecting and interrupting power transmission between the engine and the power transmission system being interposed between the engine and the power transmission system, a rate of inertia of the power transmission system acting on rotation of the output shaft of the engine being configured to decrease as a clutch stroke of the clutch that is an operation amount of a clutch pedal increases, and an engine rotation speed for starting the fuel injection being set to a lower value as the clutch stroke increases.

    摘要翻译: 在满足规定的燃料切断条件的情况下,设置停止燃料喷射的车辆发动机控制装置,在停止燃料的行驶中,当与发动机一起旋转的动力传递系统的惯性具有较小的动力传递系统的惯量 作用于发动机的输出轴的旋转,与作为发动机的输出轴的旋转的动力传递系统的较大惯量的情况相比,燃料喷射以较低的发动机转速开始, 能够连接和中断发动机和动力传递系统之间的动力传递的离合器插入在发动机和动力传动系统之间,作用在发动机的输出轴的旋转上的动力传动系统的惯性率被配置为减小 作为离合器的作为离合器踏板的操作量的离合器行程增加,并且发动机旋转 d随着离合器行程的增加而将燃油喷射设定为较低的值。

    Sintered sputtering target made of refractory metals
    9.
    发明授权
    Sintered sputtering target made of refractory metals 有权
    由难熔金属制成的烧结溅射靶

    公开(公告)号:US08118984B2

    公开(公告)日:2012-02-21

    申请号:US12279067

    申请日:2007-02-22

    申请人: Ryo Suzuki

    发明人: Ryo Suzuki

    IPC分类号: C23C14/00 C25B11/00 C25B13/00

    摘要: Proposed is a sintered sputtering target containing two or more types of refractory metals. In particular, proposed is a sintered sputtering target of refractory metals that is able to improve the target structure to prevent the dropout of metal particles other than the matrix-forming major component, improve the deposition quality as well as the workability of the target by reducing impurities such as gas components, enhancing the density and eliminating the generation of arcing and particles in sputtering. This sintered sputtering target of refractory metals is composed of one or more types of minor components selected from W, Ta and Hf at less than 50 at % as well as at least one or more major components selected from Ru, Rh and Ir and inevitable impurities as the remainder. The metal structure of the major component comprises a granular minor component metal phase, or an alloy phase or a compound phase of the major and the minor component having an average grain size of 100 μm to 500 μm.

    摘要翻译: 提出的是含有两种以上难熔金属的烧结溅射靶。 特别地,提出了一种难熔金属的烧结溅射靶,其能够改善目标结构以防止除基体形成主要成分之外的金属颗粒的脱落,通过减少来提高沉积质量以及靶的可加工性 诸如气体组分的杂质,增强了密度并消除了溅射中电弧和颗粒的产生。 难熔金属的烧结溅射靶由小于50at%的选自W,Ta和Hf的一种或多种次要组分以及选自Ru,Rh和Ir中的至少一种或多种主要成分和不可避免的杂质构成 作为剩余部分。 主要成分的金属组织包括平均粒径为100μm〜500μm的粒状次成分金属相或主成分和次要成分的合金相或化合物相。

    Hybrid Silicon Wafer and Method of Producing the Same
    10.
    发明申请
    Hybrid Silicon Wafer and Method of Producing the Same 有权
    混合硅晶片及其制造方法

    公开(公告)号:US20120009374A1

    公开(公告)日:2012-01-12

    申请号:US12832150

    申请日:2010-07-08

    IPC分类号: B32B3/02 B29D7/00 C01B33/02

    摘要: Provided is a hybrid silicon wafer in which molten state polycrystalline silicon and solid state single-crystal silicon are mutually integrated, comprising fine crystals having an average crystal grain size of 8 mm or less at a polycrystalline portion within 10 mm from a boundary with a single-crystal portion. Additionally provided is a method of manufacturing a hybrid silicon wafer, wherein a columnar single-crystal silicon ingot is sent in a mold in advance, molten silicon is cast around and integrated with the single-crystal ingot to prepare an ingot complex of single-crystal silicon and polycrystalline silicon, and a wafer shape is cut out therefrom. The provided hybrid silicon wafer comprises the functions of both a polycrystalline silicon wafer and a single-crystal wafer.

    摘要翻译: 提供了一种混合硅晶片,其中熔融状态的多晶硅和固态单晶硅相互整合,包括在与单个边界的边界10mm以内的多晶部分处具有8mm或更小的平均晶粒尺寸的细晶体 晶体部分。 另外提供了一种制造混合硅晶片的方法,其中预先在模具中输送柱状单晶硅锭,将熔融硅铸造并与单晶锭一体化以制备单晶锭锭 硅和多晶硅,并从其中切出晶片形状。 所提供的混合硅晶片包括多晶硅晶片和单晶晶片的功能。