公开(公告)号：US06942812B2

公开(公告)日：2005-09-13

申请号：US10281165

申请日：2002-10-28

申请人： Ryo Tateno ,  Masaru Koeda ,  Satoshi Irikuchi

发明人： Ryo Tateno ,  Masaru Koeda ,  Satoshi Irikuchi

IPC分类号： G02B5/28 ,  G02B26/00 ,  H01S3/08 ,  H01S3/098 ,  G01B9/02

CPC分类号： G02B26/001 ,  H01S3/08036

摘要： In producing an etalon, a thickness of an etalon base plate is measured, and the etalon base plate is placed in a process chamber. Then, a gas having a chemical reactivity with respect to a material of the etalon base plate is introduced into the process chamber, and a surface of the etalon base plate is etched for only a predetermined time corresponding to a thickness of the etalon base plate, thereby obtaining the etalon having a desired thickness.

摘要翻译： 在产生标准具时，测量标准具基板的厚度，并将标准具底板放置在处理室中。 然后，将具有与标准具基板的材料的化学反应性的气体引入处理室，并且将标准具基板的表面仅刻蚀对应于标准具基板的厚度的预定时间， 从而获得具有所需厚度的标准具。

公开(公告)号：US08092701B2

公开(公告)日：2012-01-10

申请号：US11948133

申请日：2007-11-30

申请人： Tetsuya Nagano ,  Masaru Koeda ,  Makoto Sato ,  Akira Sato ,  Shinji Miyauchi

发明人： Tetsuya Nagano ,  Masaru Koeda ,  Makoto Sato ,  Akira Sato ,  Shinji Miyauchi

IPC分类号： B44C1/22

CPC分类号： G02B5/1857 ,  B29D11/0074 ,  G01J3/18 ,  G02B5/1852 ,  G02B5/1861 ,  Y10T428/24479 ,  Y10T428/24612

摘要： A grating of the present invention has a groove cross section shaped, for example, like a sinusoidal wave or a sawtooth other than a laminar shape, and a groove bottom part shaped as a flat form. In a region wherein the groove cycle and the used wavelength are the same degree for wavelengths from near infrared to infrared, the grating of the present invention has the excellent spectrum performance (high efficiency in balance in a wide wavelength zone) more than a holographic grating and an echellette grating in related arts. When replicas for the grating of the present invention are manufactured, the engagement force of grooves with each other is small as the groove aspect ratio is small, and a release agent sufficiently reaches the groove bottom as the groove bottom is large.

摘要翻译： 本发明的光栅具有例如像正弦波或除了片状以外的锯齿状的槽状横截面，以及成形为平面形状的槽底部。 在其中槽周期和使用波长对于从近红外到红外线的波长相同的区域中，本发明的光栅具有比全息光栅更好的光谱性能（在宽波长区域中平衡的高效率） 和相关领域的电子格子。 当制造用于本发明的光栅的复制品时，由于沟槽纵横比小，沟槽的接合力小，并且当槽底部大时，剥离剂充分到达槽底。

公开(公告)号：US07455957B2

公开(公告)日：2008-11-25

申请号：US10993029

申请日：2004-11-19

申请人： Masaru Koeda

发明人： Masaru Koeda

IPC分类号： G03C5/00 ,  B29D11/00

CPC分类号： G02B5/1857 ,  G03H1/182 ,  G03H2260/14 ,  G03H2260/63

摘要： A substrate is subjected to holographic exposure to a sinusoidal or half-sinusoidal resist pattern corresponding to grating groove thereon. Thereafter, the substrate and the resist pattern are subjected to a first etching step at which they are irradiated with an ion beam obliquely at an angle that is identical to the blaze angle in the presence of CF4 as an etching gas, whereby they are cut until the height of the resist is about ⅓ of the initial value. Thereafter, the substrate is subjected to a second etching step at which the substrate is irradiated with an ion beam in the direction corresponding to the bisector of the vertex in the presence of a mixture of CF4 and O2 as an etching gas, whereby the substrate is cut until the resist disappears completely to an extent such that some overetching occurs.

摘要翻译： 对基板进行全息曝光到对应于其上的光栅槽的正弦或半正弦抗蚀图案。 此后，对基板和抗蚀剂图案进行第一蚀刻步骤，在CF 4存在下，以与闪光角度相同的角度倾斜地照射离子束作为 蚀刻气体，由此它们被切割直到抗蚀剂的高度为初始值的大约1/3。 此后，对基板进行第二蚀刻步骤，在第二蚀刻步骤中，在存在CF 4和O 3的混合物的情况下，在与顶点的二等分线对应的方向上用离子束照射基板， 作为蚀刻气体，由此基板被切割直到抗蚀剂完全消失到发生一些过蚀刻的程度。

公开(公告)号：US5234537A

公开(公告)日：1993-08-10

申请号：US854684

申请日：1992-03-20

申请人： Tetsuya Nagano ,  Masaru Koeda

发明人： Tetsuya Nagano ,  Masaru Koeda

IPC分类号： C03C15/00 ,  C04B41/53 ,  C04B41/91 ,  G02B5/18 ,  G02B6/124 ,  H01L21/04

CPC分类号： G02B6/124 ,  C03C15/00 ,  C04B41/5346 ,  C04B41/91 ,  G02B5/1857 ,  H01L21/0475

摘要： A dry etching method for etching a surface of a substrate with plasma of mixed gas including i) gas that is reactive to the material of the substrate, and ii) inert gas. Accumulation of reaction products between the substrate and the reactive gas ions on the substrate is effectively eliminated by the ions of the inert gas plasma. Accordingly the etching rate of the substrate is not lowered. Silicon carbide (SiC) is one of the most suitable object of the plasma etching of the present invention, since it is hard to engrave by conventional dry etching methods.

公开(公告)号：US20060216478A1

公开(公告)日：2006-09-28

申请号：US11420932

申请日：2006-05-30

申请人： Tetsuya Nagano ,  Masaru Koeda ,  Makoto Sato ,  Akira Sato ,  Shinji Miyauchi

发明人： Tetsuya Nagano ,  Masaru Koeda ,  Makoto Sato ,  Akira Sato ,  Shinji Miyauchi

IPC分类号： B32B3/00

CPC分类号： G02B5/1857 ,  B29D11/0074 ,  G01J3/18 ,  G02B5/1852 ,  G02B5/1861 ,  Y10T428/24479 ,  Y10T428/24612

摘要： A grating of the present invention has a groove cross section shaped, for example, like a sinusoidal wave or a sawtooth other than a laminar shape, and a groove bottom part shaped as a flat form. In a region wherein the groove cycle and the used wavelength are the same degree for wavelengths from near infrared to infrared, the grating of the present invention has the excellent spectrum performance (high efficiency in balance in a wide wavelength zone) more than a holographic grating and an echellette grating in related arts. When replicas for the grating of the present invention are manufactured, the engagement force of grooves with each other is small as the groove aspect ratio is small, and a release agent sufficiently reaches the groove bottom as the groove bottom is large.

摘要翻译： 本发明的光栅具有例如像正弦波或除了片状以外的锯齿状的槽状横截面，以及成形为平面形状的槽底部。 在其中槽周期和使用波长对于从近红外到红外线的波长相同的区域中，本发明的光栅具有比全息光栅更好的光谱性能（在宽波长区域中平衡的高效率） 和相关领域的电子格子。 当制造用于本发明的光栅的复制品时，由于沟槽纵横比小，沟槽的接合力小，并且当槽底部大时，剥离剂充分到达槽底。

公开(公告)号：US20050130072A1

公开(公告)日：2005-06-16

申请号：US10993029

申请日：2004-11-19

申请人： Masaru Koeda

发明人： Masaru Koeda

IPC分类号： G02B5/18 ,  B29D11/00 ,  G03C5/00 ,  G03F7/20 ,  G03H1/18

CPC分类号： G02B5/1857 ,  G03H1/182 ,  G03H2260/14 ,  G03H2260/63

摘要： A substrate is subjected to holographic exposure to a sinusoidal or half-sinusoidal resist pattern corresponding to grating groove thereon. Thereafter, the substrate and the resist pattern are subjected to a first etching step at which they are irradiated with an ion beam obliquely at an angle that is identical to the blaze angle in the presence of CF4 as an etching gas, whereby they are cut until the height of the resist is about ⅓ of the initial value. Thereafter, the substrate is subjected to a second etching step at which the substrate is irradiated with an ion beam in the direction corresponding to the bisector of the vertex in the presence of a mixture of CF4 and O2 as an etching gas, whereby the substrate is cut until the resist disappears completely to an extent such that some overetching occurs.

摘要翻译： 对基板进行全息曝光到对应于其上的光栅槽的正弦或半正弦抗蚀图案。 此后，对基板和抗蚀剂图案进行第一蚀刻步骤，在CF 4存在下，以与闪光角度相同的角度倾斜地照射离子束作为 蚀刻气体，由此它们被切割直到抗蚀剂的高度为初始值的大约1/3。 此后，对基板进行第二蚀刻步骤，在第二蚀刻步骤中，在存在CF 4和O 3的混合物的情况下，在与顶点的二等分线对应的方向上用离子束照射基板， 作为蚀刻气体，由此基板被切割直到抗蚀剂完全消失到发生一些过蚀刻的程度。

公开(公告)号：US20080088930A1

公开(公告)日：2008-04-17

申请号：US11948133

申请日：2007-11-30

申请人： Tetsuya Nagano ,  Masaru Koeda ,  Makoto Sato ,  Akira Sato ,  Shinji Miyauchi

发明人： Tetsuya Nagano ,  Masaru Koeda ,  Makoto Sato ,  Akira Sato ,  Shinji Miyauchi

IPC分类号： G02B5/18 ,  B29D11/00

CPC分类号： G02B5/1857 ,  B29D11/0074 ,  G01J3/18 ,  G02B5/1852 ,  G02B5/1861 ,  Y10T428/24479 ,  Y10T428/24612

摘要： A grating of the present invention has a groove cross section shaped, for example, like a sinusoidal wave or a sawtooth other than a laminar shape, and a groove bottom part shaped as a flat form. In a region wherein the groove cycle and the used wavelength are the same degree for wavelengths from near infrared to infrared, the grating of the present invention has the excellent spectrum performance (high efficiency in balance in a wide wavelength zone) more than a holographic grating and an echellette grating in related arts. When replicas for the grating of the present invention are manufactured, the engagement force of grooves with each other is small as the groove aspect ratio is small, and a release agent sufficiently reaches the groove bottom as the groove bottom is large.

摘要翻译： 本发明的光栅具有例如像正弦波或除了片状以外的锯齿状的槽状横截面，以及成形为平面形状的槽底部。 在其中槽周期和使用波长对于从近红外到红外线的波长相同的区域中，本发明的光栅具有比全息光栅更好的光谱性能（在宽波长区域中平衡的高效率） 和相关领域的电子格子。 当制造用于本发明的光栅的复制品时，由于沟槽纵横比小，沟槽的接合力小，并且当槽底部大时，剥离剂充分到达槽底。

公开(公告)号：US07129028B2

公开(公告)日：2006-10-31

申请号：US10459463

申请日：2003-06-12

申请人： Masaru Koeda ,  Yuji Tanaka ,  Akio Soejima

发明人： Masaru Koeda ,  Yuji Tanaka ,  Akio Soejima

IPC分类号： G03C5/00 ,  B29D11/00

CPC分类号： G03F7/0005 ,  G01J3/1838 ,  G03H1/0244 ,  G03H1/028 ,  G03H2001/0296 ,  G03H2260/63

摘要： In a method of forming a holographic grating, a photoresist layer is formed on an optical substrate, and a resist pattern is formed in the photoresist layer to have grooves depth deeper than a predetermined depth of diffraction grating grooves to be formed. Then, the photoresist layer with the resist pattern is etched by an ion beam generated by a mixed gas containing a fluorine based gas and oxygen until the resist pattern is substantially completely disappears. Thus, the diffraction grating grooves having the predetermined depth are directly engraved on the optical glass plate.

公开(公告)号：US5363238A

公开(公告)日：1994-11-08

申请号：US64912

申请日：1993-05-24

申请人： Yasuhiro Akune ,  Kichiya Tanino ,  Masaru Koeda ,  Tetsuya Nagano ,  Kazuo Sano ,  Eiji Ishiguro

发明人： Yasuhiro Akune ,  Kichiya Tanino ,  Masaru Koeda ,  Tetsuya Nagano ,  Kazuo Sano ,  Eiji Ishiguro

IPC分类号： G02B5/18 ,  G21K1/06 ,  G02B27/44

CPC分类号： G21K1/06

摘要： The present invention discloses diffraction gratings which do not generate any thermal strain and can perform extremely high-precision and high-efficiency diffraction nearly free from scattered beams. The diffraction gratings are built by allowing the chemically deposited film of silicon carbide whose crystal planes are strongly oriented to the (220) planes in terms of Miller indices to form on the substrate comprising sintered silicon carbide, polishing the surface of the deposited film to 5 .ANG. RMS or less, and directly etched laminar-type grating grooves on that surface by using ion-beam etching.

摘要翻译： 本发明公开了不产生任何热应变的衍射光栅，能够实现几乎不受分散光束的极高精度和高效率的衍射。 衍射光栅是通过使坩埚的化学沉积膜以米勒指数方向强烈地取向（220）面的碳化硅的化学沉积膜形成在包含烧结碳化硅的衬底上，将沉积膜的表面抛光至5 ANGSTROM RMS或更小，以及通过使用离子束蚀刻在该表面上直接蚀刻的层状光栅槽。