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公开(公告)号:US20110298020A1
公开(公告)日:2011-12-08
申请号:US13189883
申请日:2011-07-25
申请人: Ryoichi KAJIWARA , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa
发明人: Ryoichi KAJIWARA , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa
IPC分类号: H01L29/772
CPC分类号: H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012
摘要: A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.
摘要翻译: 一种半导体器件,其中第一金属部件经由包含第一贵金属的第一金属体接合到半导体元件的第一电极,并且第二金属部件经由包含第二贵金属的第二金属体接合到第二电极 金属。
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公开(公告)号:US20080169537A1
公开(公告)日:2008-07-17
申请号:US12046741
申请日:2008-03-12
申请人: Ryoichi KAJIWARA , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa
发明人: Ryoichi KAJIWARA , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa
IPC分类号: H01L23/495
CPC分类号: H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012
摘要: A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.
摘要翻译: 一种半导体器件,其中第一金属部件经由包含第一贵金属的第一金属体接合到半导体元件的第一电极,并且第二金属部件经由包含第二贵金属的第二金属体接合到第二电极 金属。
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公开(公告)号:US20100187678A1
公开(公告)日:2010-07-29
申请号:US12691175
申请日:2010-01-21
申请人: Ryoichi KAJIWARA , Shigehisa MOTOWAKI , Kazutoshi ITO , Toshiaki ISHII , Katsuo ARAI , Takuya NAKAJO , Hidemasa KAGII
发明人: Ryoichi KAJIWARA , Shigehisa MOTOWAKI , Kazutoshi ITO , Toshiaki ISHII , Katsuo ARAI , Takuya NAKAJO , Hidemasa KAGII
IPC分类号: H01L23/495 , H01L21/60
CPC分类号: H01L21/56 , H01L23/3107 , H01L23/49513 , H01L23/49524 , H01L23/49562 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/85 , H01L2224/04026 , H01L2224/05624 , H01L2224/05644 , H01L2224/0603 , H01L2224/29101 , H01L2224/2919 , H01L2224/29339 , H01L2224/29347 , H01L2224/32245 , H01L2224/40245 , H01L2224/40247 , H01L2224/40249 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/48724 , H01L2224/48747 , H01L2224/4903 , H01L2224/49051 , H01L2224/49171 , H01L2224/73265 , H01L2224/83192 , H01L2224/83439 , H01L2224/83801 , H01L2224/8384 , H01L2224/8385 , H01L2224/83855 , H01L2224/83856 , H01L2224/8392 , H01L2224/83951 , H01L2224/84801 , H01L2224/8485 , H01L2224/85447 , H01L2224/8592 , H01L2224/92 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/0781 , H01L2924/10253 , H01L2924/12044 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/30105 , H01L2924/351 , H01L2924/05432 , H01L2224/78 , H01L2924/00 , H01L2924/00012 , H01L2924/01032 , H01L2924/3512 , H01L2224/48744
摘要: In a structure of a semiconductor device, a Si chip and a metal leadframe are jointed by metallic bond via a porous joint layer made of high conductive metal, having a three-dimensional network structure and using Ag as a bonding material, and a film containing Zn oxide or Al oxide is formed on a surface of a semiconductor assembly contacting to a polymer resin. In this manner, by the joint with the joint layer having the porous structure mainly made of Ag, thermal stress load of the Si chip can be reduced, and fatigue life of the joint layer itself can be improved. Besides, since adhesion of the polymer resin to the film can be enhanced by the anchor effect, occurrence of cracks in a bonding portion can be prevented, so that a highly-reliable Pb-free semiconductor device can be provided.
摘要翻译: 在半导体器件的结构中,Si芯片和金属引线框通过金属接合,通过具有三维网状结构的高导电性金属的多孔接合层,使用Ag作为接合材料,以及含有 在与聚合物树脂接触的半导体组件的表面上形成氧化锌或氧化铝。 以这种方式,通过与主要由Ag形成的多孔结构的接合层的接合,可以降低Si片的热应力负荷,并且可以提高接合层本身的疲劳寿命。 此外,由于通过锚固效应可以提高聚合物树脂对膜的粘附性,可以防止接合部发生裂纹,从而可以提供高可靠性的无铅半导体器件。
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4.SEMICONDUCTOR APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS, AND JOINT MATERIAL 有权
标题翻译: 半导体器件,半导体器件的制造方法和接合材料公开(公告)号:US20090096100A1
公开(公告)日:2009-04-16
申请号:US12246811
申请日:2008-10-07
申请人: Ryoichi KAJIWARA , Kazutoshi Itou , Hiroi Oka , Takuya Nakajo , Yuichi Yato
发明人: Ryoichi KAJIWARA , Kazutoshi Itou , Hiroi Oka , Takuya Nakajo , Yuichi Yato
IPC分类号: H01L23/488 , H01L21/60 , H01B1/22
CPC分类号: H01L23/49562 , H01L23/49513 , H01L23/49524 , H01L24/16 , H01L24/29 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/81 , H01L24/83 , H01L2224/0401 , H01L2224/04026 , H01L2224/0603 , H01L2224/13099 , H01L2224/13144 , H01L2224/16225 , H01L2224/29101 , H01L2224/29111 , H01L2224/29139 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/32013 , H01L2224/32225 , H01L2224/32245 , H01L2224/37124 , H01L2224/37147 , H01L2224/40245 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/73204 , H01L2224/73265 , H01L2224/81193 , H01L2224/81801 , H01L2224/8184 , H01L2224/83455 , H01L2224/83801 , H01L2224/8384 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/1033 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15311 , H01L2924/15747 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/30105 , H01L2924/351 , H05K3/321 , H05K2201/0116 , H05K2201/0218 , H05K2201/0272 , H05K2201/10636 , H05K2203/1131 , H05K2203/121 , H05K2203/125 , Y02P70/611 , H01L2924/00014 , H01L2924/00 , H01L2924/01032 , H01L2924/3512 , H01L2924/00012
摘要: A die bonding portion is metallically bonded by well-conductive Cu metal powders with a maximum particle diameter of about 15 μm to 200 μm and adhesive layers of Ag, and minute holes are evenly dispersed in a joint layer. With this structure, the reflow resistance of about 260° C. and reliability under thermal cycle test can be ensured without using lead.
摘要翻译: 芯片接合部分由具有约15μm至200μm的最大粒径和Ag的粘合剂层的良好导电的Cu金属粉末金属地结合,并且微孔均匀地分散在接合层中。 利用这种结构,可以在不使用铅的情况下确保约260℃的回流电阻和热循环试验下的可靠性。
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5.METAL-RESIN COMPOSITE, METHOD FOR PRODUCING THE SAME, BUSBAR, MODULE CASE, AND RESINOUS CONNECTOR PART 有权
标题翻译: 金属树脂复合材料,其制造方法,母线,模块和环形连接器部件公开(公告)号:US20120141818A1
公开(公告)日:2012-06-07
申请号:US13308586
申请日:2011-12-01
CPC分类号: C23C16/56 , C22F1/10 , C22F1/165 , H01L21/56 , H01L23/049 , H01L23/24 , H01L23/296 , H01L23/3142 , H01L23/3735 , H01L2224/45124 , H01L2224/48091 , H01L2224/48472 , H01L2224/73265 , H01L2924/13055 , H01L2924/181 , H01L2924/19107 , H01L2924/30107 , Y10T428/12458 , Y10T428/12472 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要: Provided are a metal-resin composite having excellent adhesive strength, a method for producing the same, a busbar, a module case, and a resinous connector part. The metal-resin composite comprises a metallic member 1 including a metal with a high melting point of 500° C. or more, a resin member 2 being integrated with the metallic member 1; and an alloy layer 3 including a metal with a low melting point lower than 500° C. The alloy layer 3 is arranged between the metallic member 1 and the resin member 2, and has average surface roughness thereof in the range from 5 nm or more to less than 1 μm at the interface between the alloy layer 3 and the resin member 2. Herein, a period of the unevenness formed on the interface of the alloy layer 3 is in the range from 5 nm or more to less than 1 μm.
摘要翻译: 提供具有优异的粘合强度的金属 - 树脂复合材料,其制造方法,母线,模块壳体和树脂连接器部件。 金属 - 树脂复合材料包括金属构件1,其包括具有500℃或更高熔点的金属的金属构件1,与金属构件1成一体的树脂构件2; 以及包含低于500℃的低熔点金属的合金层3.合金层3配置在金属构件1与树脂构件2之间,其平均表面粗糙度为5nm以上 在合金层3和树脂构件2之间的界面处小于1μm。这里,在合金层3的界面上形成的凹凸的周期在5nm以上至小于1μm的范围内。
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6.
公开(公告)号:US20110290863A1
公开(公告)日:2011-12-01
申请号:US13117361
申请日:2011-05-27
CPC分类号: H01B1/02 , B22F3/22 , B22F2998/00 , B22F2998/10 , B23K1/0016 , B23K1/206 , B23K2101/40 , C22C1/0466 , H01B1/22 , H01L23/49513 , H01L23/4952 , H01L23/49582 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L2224/04026 , H01L2224/04042 , H01L2224/05644 , H01L2224/0603 , H01L2224/27332 , H01L2224/29339 , H01L2224/32245 , H01L2224/45014 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48724 , H01L2224/48744 , H01L2224/73265 , H01L2224/83055 , H01L2224/83065 , H01L2224/83097 , H01L2224/83192 , H01L2224/83455 , H01L2224/8384 , H01L2224/8392 , H01L2224/83951 , H01L2224/83986 , H01L2224/85205 , H01L2224/92247 , H01L2924/00011 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/12044 , H01L2924/15747 , H01L2924/181 , H01L2924/00014 , B22F3/10 , B22F1/02 , H01L2924/00012 , H01L2924/00 , H01L2224/2919 , H01L2224/29101 , H01L2924/3512 , H01L2224/83205
摘要: An object of the present invention is to provide a composition of a sintering Ag paste which can metallically bond to a nonprecious metal member with high strength as well as to a precious metal member, in a sintering Ag paste which metallically bonds to a metal at a low temperature, and to provide a bonding method to obtain a joint part having high strength. The sintering Ag paste is a material containing a solution of an organic silver complex that is easily decomposed by heat regardless of an atmosphere. Furthermore, the bonding method includes: metallizing a face of a nonprecious metal with Ag in a non-oxidizing atmosphere in a step prior to sintering Ag particles; and then sintering the Ag particles in an oxidizing atmosphere.
摘要翻译: 本发明的目的是提供一种烧结Ag糊料的组合物,该组合物可以在与金属结合的烧结Ag糊料中金属结合到金属上,该组合物可以金属结合到具有高强度的非贵重金属构件以及贵金属构件 并且提供接合方法以获得具有高强度的接合部。 烧结Ag糊料是含有有机银络合物的溶液的材料,无论气氛如何,其易于被热分解。 此外,接合方法包括:在烧结Ag颗粒之前的步骤中,在非氧化性气氛中将Ag非金属金属的金属化金属化; 然后在氧化气氛中烧结Ag粒子。
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