摘要:
An apparatus for growing a single crystal (20) comprising at least a main chamber (1) enclosing a crucible (5, 6) for accommodating a raw material melt (4) and a heater (7) for heating the raw material melt and a pulling chamber (2) continuously provided above the main chamber, into which a grown single crystal is pulled and stored, wherein the apparatus further comprises a cooling cylinder (11) that extends at least from a ceiling of the main chamber toward a raw material melt surface so as to surround a single crystal under pulling (3) and is forcibly cooled with a cooling medium, and an auxiliary cooling member (13) extending below the cooling cylinder and having a cylindrical shape or a shape tapered toward the downward direction. There is provided an apparatus for growing a single crystal that can exert cooling effect on a grown single crystal to the maximum extent so as to accelerate the crystal growth rate and safely produce a single crystal without leakage of cooling medium due to breakage etc.
摘要:
According to the present invention, there is disclosed a silicon single crystal wafer grown according to the CZ method which is a wafer having a diameter of 200 mm or more produced from a single crystal grown at a growth rate of 0.5 mm/min or more without doping except for a dopant for controlling resistance, wherein neither an octahedral void defect due to vacancies nor a dislocation cluster due to interstitial silicons exists as a grown-in defect, and a method for producing it. There can be provided a high quality silicon single crystal wafer having a large diameter wherein a silicon single crystal in which both of octahedral void defects and dislocation clusters which are growth defects are substantially eliminated is grown at higher rate compared with the conventional method by the usual CZ method, and furthermore by controlling a concentrations of interstitial oxygen in the crystal to be low, a precipitation amount is lowered and ununiformity of BMD in a plane of the wafer is improved, and provided a method for producing it.
摘要:
In a method manufacturing a silicon single crystal 8 according to an MCZ method, a flow rate of an inert gas flowing in a growth furnace 1 during growth of the silicon single crystal 8 and/or a pressure in the growth furnace 1 is altered according to a pulling amount of the silicon single crystal 8 to adjust an interstitial oxygen concentration therein. By altering a flow rate of an inert gas flowing in the growth furnace or a pressure therein, an amount of oxygen evaporating as an oxide from a surface of a silicon melt 10 in the vicinity of a crystal growth interface can be easily adjusted, and thereby, an oxygen amount included in the silicon melt 10 can be controlled with ease.
摘要:
An epitaxial silicon wafer, which has no projections having a size of 100 nm or more and a height of 5 nm or more on an epitaxial layer, and a method for producing an epitaxial silicon wafer, wherein a single crystal ingot containing no I-region is grown when a silicon single crystal is grown by the CZ method, and an epitaxial layer is deposited on a silicon wafer sliced from the single crystal ingot and containing no I-region for the entire surface. An epitaxial wafer of high quality with no projection-like surface distortion observed as particles on an epi-layer surface is provided by forming a wafer having no I-region for the entire surface from a single crystal and depositing an epitaxial layer thereon, and a single crystal having no I-region for entire plane is produced with good yield and high productivity, thereby improving productivity of epi-wafers and realizing cost reduction.
摘要:
The present invention provides an apparatus and a method for producing a silicon semiconductor single crystal which can stabilize and homogenize an amount of precipitated oxygen in the direction of the crystal growth axis when growing a silicon semiconductor single crystal. The apparatus for producing a silicon semiconductor single crystal by the Czochralski method comprises a main growth furnace having a crucible retaining silicon melt disposed therein for growing a silicon semiconductor single crystal, and an upper growth furnace for housing therein and cooling the silicon semiconductor single crystal pulled from the silicon melt, wherein the upper growth furnace communicated to a ceiling section of the main growth furnace is provided with an upper insulating member for surrounding a pulled silicon semiconductor single crystal.
摘要:
A silicon wafer sliced from a silicon single crystal having a low oxygen concentration is used as an epitaxial substrate to provide semiconductor silicon single crystal wafers exhibiting good electrical characteristics at a low cost. A semiconductor silicon single crystal having a resistivity in a range of 0.005 to 0.02 .OMEGA..multidot.cm and an oxygen concentration of 12.times.10.sup.17 atoms/cm.sup.3 (ASTM'79) or less is manufactured by a Czochralski (CZ) method. The resulting silicon single crystal is shaped into a silicon single crystal substrate on which a silicon single crystal is epitaxially grown.
摘要翻译:使用从低氧浓度的硅单晶切片的硅晶片作为外延基板,以低成本提供具有良好电特性的半导体硅单晶晶片。 通过Czochralski(CZ)法制造电阻率为0.005〜0.02ΩEG·xcm,氧浓度为12×10 17 atoms / cm 3(ASTM'79)以下的半导体硅单晶。 将所得的硅单晶成形为其上外延生长硅单晶的硅单晶衬底。
摘要:
The present invention provides a silicon wafer sliced from a silicon single crystal ingot grown by the Czochralski method under such conditions that V-rich region should become dominant, wherein count number of particles having a size of 0.1 &mgr;m or more is 1 count/cm2 or less when particles are counted by using a particle counter and a method for producing a silicon single crystal. Thus, there is provided a production technique that can improve productivity and reduce cost for high quality silicon wafers of excellent device characteristics by further reducing density and size of defects such as COP.
摘要:
The present invention provides a method for producing a silicon wafer from a defect-free silicon single crystal grown by a CZ method, the method comprising: preparing a silicon wafer obtained by slicing the defect-free silicon single crystal and subjected to mirror-polishing; then performing a heat treatment step of subjecting the mirror-polished silicon wafer to heat treatment at a temperature of 500° C. or higher but 600° C. or lower for 4 hours or more but 6 hours or less; and performing a repolishing step of repolishing the silicon wafer after the heat treatment step such that a polishing amount becomes 1.5 μm or more. Therefore, it is an object to provide a method by which a silicon wafer can be produced at a high yield, the silicon wafer in which LPDs are reduced to a minimum, the silicon wafer with a low failure-incidence rate in an inspection step and a shipment stage.
摘要:
A method for producing a silicon single crystal by the Czochralski method with carbon-doping comprising: charging a polycrystalline silicon material and any one of a carbon dopant selected from the group consisting of an organic compound, an organic compound and a silicon wafer, carbon powder and a silicon wafer, an organic compound and carbon powder, and an organic compound and carbon powder and a silicon wafer into a crucible and melting the polycrystalline silicon material and the carbon dopant; and then growing a silicon single crystal from the melt of the polycrystalline silicon material and the carbon dopant. And a carbon-doped silicon single crystal produced by the method. Thereby, there is provided a method for producing a silicon single crystal with carbon-doping in which the crystal can be doped with carbon easily at low cost, and carbon concentration in the crystal can be controlled precisely.
摘要:
Methods for producing a silicon wafer from a defect-free silicon single crystal grown by a Czochralski (CZ) method are provided. The methods comprise: preparing a silicon wafer obtained by slicing the defect-free silicon single crystal and subjected to mirror-polishing; then performing a heat treatment step of subjecting the mirror-polished silicon wafer to heat treatment at a temperature of 500° C. or higher but 600° C. or lower for 4 hours or more but 6 hours or less; and performing a repolishing step of repolishing the silicon wafer after the heat treatment step such that a polishing amount becomes 1.5 μm or more. Therefore, it is an object to provide a method by which a silicon wafer can be produced at a high yield, the silicon wafer in which Light Point Defects (LPDs) are reduced to a minimum, the silicon wafer with a low failure-incidence rate in an inspection step and a shipment stage.