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1.发明授权Epitaxial silicon wafer, method for producing the same and subtrate for epitaxial silicon wafer 有权外延硅晶片，其制造方法和外延硅晶片的减渣公开(公告)号：US06565822B1
公开(公告)日：2003-05-20
申请号：US09646713
申请日：2000-09-21
IPC分类号： C09B3326
CPC分类号： C30B29/06 , C30B15/203
摘要： An epitaxial silicon wafer, which has no projections having a size of 100 nm or more and a height of 5 nm or more on an epitaxial layer, and a method for producing an epitaxial silicon wafer, wherein a single crystal ingot containing no I-region is grown when a silicon single crystal is grown by the CZ method, and an epitaxial layer is deposited on a silicon wafer sliced from the single crystal ingot and containing no I-region for the entire surface. An epitaxial wafer of high quality with no projection-like surface distortion observed as particles on an epi-layer surface is provided by forming a wafer having no I-region for the entire surface from a single crystal and depositing an epitaxial layer thereon, and a single crystal having no I-region for entire plane is produced with good yield and high productivity, thereby improving productivity of epi-wafers and realizing cost reduction.
摘要翻译： 在外延层上没有尺寸为100nm以上且高度为5nm以上的外延硅晶片和外延硅晶片的制造方法，其中，不含I区域的单晶锭 当通过CZ法生长硅单晶时生长，并且在从单晶锭切片的硅晶片上沉积外延层，并且在整个表面上不含有I区。 通过从单晶形成整个表面没有I区的晶片并在其上沉积外延层来提供高品质的外延晶片，其没有观察到作为外延表面上的颗粒的投射状表面变形， 以良好的产率和高生产率生产不具有整个平面的I区的单晶，从而提高外延片的生产率并实现成本降低。
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公开(公告)号：US06893499B2
公开(公告)日：2005-05-17
申请号：US10312921
申请日：2001-06-28
申请人： Izumi Fusegawa , Koji Kitagawa , Ryoji Hoshi , Masahiro Sakurada , Tomohiko Ohta
发明人： Izumi Fusegawa , Koji Kitagawa , Ryoji Hoshi , Masahiro Sakurada , Tomohiko Ohta
CPC分类号： C30B29/06 , C30B15/203
摘要： According to the present invention, there is disclosed a silicon single crystal wafer grown according to the CZ method which is a wafer having a diameter of 200 mm or more produced from a single crystal grown at a growth rate of 0.5 mm/min or more without doping except for a dopant for controlling resistance, wherein neither an octahedral void defect due to vacancies nor a dislocation cluster due to interstitial silicons exists as a grown-in defect, and a method for producing it. There can be provided a high quality silicon single crystal wafer having a large diameter wherein a silicon single crystal in which both of octahedral void defects and dislocation clusters which are growth defects are substantially eliminated is grown at higher rate compared with the conventional method by the usual CZ method, and furthermore by controlling a concentrations of interstitial oxygen in the crystal to be low, a precipitation amount is lowered and ununiformity of BMD in a plane of the wafer is improved, and provided a method for producing it.
摘要翻译： 根据本发明，公开了一种根据CZ方法生长的硅单晶晶片，其是由以0.5mm / min以上的生长速度生长的单晶产生的直径为200mm以上的晶片的晶片，没有 除了用于控制电阻的掺杂剂之外的掺杂，其中由于间隙硅而由空位引起的八面体空隙缺陷和位错簇都不作为生长缺陷而存在，以及其制造方法。 可以提供具有大直径的高质量硅单晶晶片，其中以常规方法与常规方法相比，以更高的速率生长其中八面体空隙缺陷和作为生长缺陷的位错簇基本上消除的硅单晶 CZ法，另外通过将晶体中的间隙氧的浓度控制得较低，降低析出量，提高晶片的平面内的BMD的不均匀性，并提供其制造方法。
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3.发明申请Quartz Glass Crucible for Pulling Silicon Single Crystal and Method of Manufacturing Quartz Glass Crucible for Pulling Silicon Single Crystal 审中-公开用于拉拔单晶的石英玻璃坩埚和用于拉制单晶硅的石英玻璃坩埚的制造方法公开(公告)号：US20100139549A1
公开(公告)日：2010-06-10
申请号：US11922422
申请日：2006-05-25
CPC分类号： C30B29/06 , C03B19/095 , C30B15/10 , C30B35/002 , Y02P40/57 , Y10T117/1032
摘要： The present invention is a quartz glass crucible 5 for pulling a silicon single crystal, comprising at least an outer layer portion 23 being a translucent glass layer containing multiple bubbles in it and an inner layer portion 24 being a transparent quartz glass layer having no bubbles and a smooth surface, formed on the inner surface of the outer layer portion 23, wherein the outer layer portion 23 contains bubbles of 0.1 to 0.3 mm in diameter at the density of 1.5 to 5.0×104 bubbles/cm3. Thus, there are provided a quartz glass crucible for pulling a silicon single crystal, the quartz glass crucible being increased in mechanical strength, making it possible to suppress deformation of a quartz glass crucible for pulling a silicon single crystal during a single crystal pulling process, thereby prevent degradation in yield rate due to dislocation in a single crystal and make the manufacture of a silicon single crystal highly efficient and a method of manufacturing the same quartz glass crucible.
摘要翻译： 本发明是一种用于拉制单晶硅的石英玻璃坩埚5，至少包括外层多数部分23和外层部分23，该外层部分23是包含多个气泡的半透明玻璃层，内层部分24是不含气泡的透明石英玻璃层， 形成在外层部23的内表面上的光滑表面，其中，外层部23的密度为1.5〜5.0×10 4个气泡/ cm 3的直径为0.1〜0.3mm的气泡。 因此，提供了用于拉制单晶硅的石英玻璃坩埚，石英玻璃坩埚的机械强度提高，从而可以抑制在单晶拉制工艺期间拉出硅单晶的石英玻璃坩埚的变形， 从而防止由于单晶中的位错导致的成品率的降低，并且制造高效的硅单晶，以及制造相同的石英玻璃坩埚的方法。
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4.发明授权公开(公告)号：US07294196B2
公开(公告)日：2007-11-13
申请号：US10512470
申请日：2003-05-07
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203
摘要： In a method for producing a silicon single crystal by Czochralski method, the single crystal is grown with controlling a growth rate between a growth rate at a boundary where a defect region detected by Cu deposition remaining after disappearance of OSF ring disappears when gradually decreasing a growth rate of silicon single crystal during pulling and a growth rate at a boundary where a high oxygen precipitation Nv region having a density of BMDs of 1×107 numbers/cm3 or more and/or a wafer lifetime of 30 μsec or less after oxygen precipitation treatment disappears when gradually decreasing the growth rate further. Thereby, there is provided a silicon single crystal which does not belong to any of V region rich in vacancy, OSF region and I region rich in interstitial silicon, and has excellent electrical characteristics and gettering capability, so that yield of devices can be surely improved, and also an epitaxial wafer.
摘要翻译： 在通过Czochralski法制造单晶硅的方法中，通过控制在逐渐减小生长时OSF环消失后残留的Cu沉积检测到的缺陷区域的边界处的生长速度之间的生长速率生长单晶 拉伸时的硅单晶速率和BMD密度为1×10 7 / cm 3以上的高氧沉淀Nv区域的边界处的生长速度，以及 /或在氧沉淀处理后30微米或更小的晶片寿命在进一步降低生长速率时消失。 由此，提供了不属于富含空隙的V区，OSF区和富含间隙硅的I区的任何一种的硅单晶，并且具有优异的电特性和吸杂能力，从而可以可靠地提高器件的产量 ，以及外延晶片。
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公开(公告)号：US07129123B2
公开(公告)日：2006-10-31
申请号：US10500580
申请日：2003-10-24
CPC分类号： H01L21/76254 , C30B29/06 , C30B33/005 , C30B33/04 , C30B33/06 , C30B33/10
摘要： In a method for producing an SOI wafer comprising steps of implanting ions from a bond wafer surface to form an ion-implanted layer inside the wafer, bonding the ion-implanted bond wafer surface and a surface of a base wafer via an oxide film or directly, and forming an SOI wafer by delaminating by heat treatment a part of the bond wafer at the ion-implanted layer, the bond wafer is a silicon wafer that consists of a silicon single crystal grown by Czochralski method, that is occupied by N region outside OSF generated in a ring shape and that has no defect region detected by Cu deposition method. Thereby, even an extremely thin SOI layer having a thickness of 200 nm or less, can provide an SOI wafer that has an excellent electric property without micro pits caused by acid cleaning, and can be produced without increasing the number of processes.
摘要翻译： 在制造SOI晶片的方法中，包括从接合晶片表面注入离子以在晶片内部形成离子注入层的步骤，通过氧化膜或直接键合离子注入的接合晶片表面和基底晶片的表面 ，并且通过在离子注入层处热处理接合晶片的一部分来形成SOI晶片，接合晶片是由通过Czochralski方法生长的硅单晶组成的硅晶片，其被N区域外部占据 OSF以环形形成，并且没有通过Cu沉积法检测到缺陷区域。 因此，即使是厚度为200nm以下的极薄的SOI层也能够提供具有优异的电性能的SOI晶片，而不会产生由酸清洗引起的微凹坑，并且可以在不增加工艺数的情况下制造。
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公开(公告)号：US20060174819A1
公开(公告)日：2006-08-10
申请号：US10561865
申请日：2004-05-27
CPC分类号： C30B29/06 , C30B15/203
摘要： The present invention is a method for producing a single crystal of which a whole plane in a radial direction is a defect-free region with pulling the single crystal from a raw material melt in a chamber by Czochralski method, wherein a pulling condition is changed in a direction of the crystal growth axis during pulling the single crystal so that a margin of a pulling rate is always a predetermined value or more that the single crystal of which the whole plane in a radial direction is a defect-free region can be pulled. Thereby, there can be provided a method for producing a single crystal in which when a single crystal is produced by CZ method, the single crystal of which a whole plane in a radial direction is a defect-free region entirely in a direction of the crystal growth axis can be produced with stability.
摘要翻译： 本发明是一种单晶的制造方法，其中，通过Czochralski法从室内的原料熔融物中拉出单晶，其径向全平面为无缺陷区域，其中拉拔条件发生变化 拉伸单晶时的晶体生长轴的方向，使得拉伸速度的余量总是预先确定的值以上，使得整个平面在径向方向上的单晶是无缺陷区域。 因此，可以提供一种单晶的制造方法，其中当通过CZ法制造单晶时，其整个平面在径向方向上的无缺陷区域的单晶完全在晶体的方向上 生长轴可以稳定地生产。
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7.发明申请Silicon single crystal wafer and epitaxial wafer, and method for producing silicon single crystal 有权硅单晶晶片和外延晶片，以及硅单晶的制造方法公开(公告)号：US20050252441A1
公开(公告)日：2005-11-17
申请号：US10512470
申请日：2003-05-07
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203
摘要： In a method for producing a silicon single crystal by Czochralski method, the single crystal is grown with controlling a growth rate between a growth rate at a boundary where a defect region detected by Cu deposition remaining after disappearance of OSF ring disappears when gradually decreasing a growth rate of silicon single crystal during pulling and a growth rate at a boundary where a high oxygen precipitation Nv region having a density of BMDs of 1×107 numbers/cm3 or more and/or a wafer lifetime of 30 μsec or less after oxygen precipitation treatment disappears when gradually decreasing the growth rate further. Thereby, there is provided a silicon single crystal which does not belong to any of V region rich in vacancy, OSF region and I region rich in interstitial silicon, and has excellent electrical characteristics and gettering capability, so that yield of devices can be surely improved, and also an epitaxial wafer.
摘要翻译： 在通过Czochralski法制造单晶硅的方法中，通过控制在逐渐减小生长时OSF环消失后残留的Cu沉积检测到的缺陷区域的边界处的生长速度之间的生长速率生长单晶 拉伸时的硅单晶速率和BMD密度为1×10 7 / cm 3以上的高氧沉淀Nv区域的边界处的生长速度，以及 /或在氧沉淀处理后30微米或更小的晶片寿命在进一步降低生长速率时消失。 由此，提供了不属于富含空隙的V区，OSF区和富含间隙硅的I区的任何一种的硅单晶，并且具有优异的电特性和吸杂能力，从而可以可靠地提高器件的产量 ，以及外延晶片。
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公开(公告)号：US06913646B2
公开(公告)日：2005-07-05
申请号：US10204935
申请日：2001-12-26
摘要： There can be provided a silicon single crystal wafer grown according to Czochralski method wherein the whole plane of the wafer is occupied by N region on the outside of OSF generated in a shape of a ring by thermal oxidation treatment and there exists no defect region detected by Cu deposition. Thereby, there can be produced a silicon single crystal wafer according to CZ method, which does not belong to any of V region rich in vacancies, OSF region and I region rich in interstitial silicons, and can surely improve electric characteristics such as oxide dielectric breakdown voltage characteristics or the like under stable manufacture conditions.
摘要翻译： 可以提供根据切克劳斯基法生长的硅单晶晶片，其中通过热氧化处理，晶片的整个平面由OSF外部的N形区域以环形形状占据，并且不存在由 铜沉积。 由此，可以制造根据CZ法的硅单晶晶片，其不属于富含空位的V区域，富含间隙硅的OSF区域和I区域中的任何一个，并且可以确保改善诸如氧化物介电击穿的电特性 电压特性等。
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公开(公告)号：US07226507B2
公开(公告)日：2007-06-05
申请号：US10561865
申请日：2004-05-27
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/203
摘要： The present invention is a method for producing a single crystal of which a whole plane in a radial direction is a defect-free region with pulling the single crystal from a raw material melt in a chamber by Czochralski method, wherein a pulling condition is changed in a direction of the crystal growth axis during pulling the single crystal so that a margin of a pulling rate is always a predetermined value or more that the single crystal of which the whole plane in a radial direction is a defect-free region can be pulled. Thereby, there can be provided a method for producing a single crystal in which when a single crystal is produced by CZ method, the single crystal of which a whole plane in a radial direction is a defect-free region entirely in a direction of the crystal growth axis can be produced with stability.
摘要翻译： 本发明是一种单晶的制造方法，其中，通过Czochralski法从室内的原料熔融物中拉出单晶，其径向全平面为无缺陷区域，其中拉拔条件发生变化 拉伸单晶时的晶体生长轴的方向，使得拉伸速度的余量总是预先确定的值以上，使得整个平面在径向方向上的单晶是无缺陷区域。 因此，可以提供一种单晶的制造方法，其中当通过CZ法制造单晶时，其整个平面在径向方向上的无缺陷区域的单晶完全在晶体的方向上 生长轴可以稳定地生产。
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公开(公告)号：US20050064632A1
公开(公告)日：2005-03-24
申请号：US10500580
申请日：2003-10-24
IPC分类号： C23C14/48 , C30B15/00 , C30B29/06 , C30B31/00 , C30B31/22 , C30B33/00 , C30B33/04 , C30B33/06 , C30B33/10 , H01L21/02 , H01L21/322 , H01L21/762 , H01L27/12 , H01L21/00 , H01L21/30 , H01L21/46 , H01L21/84
CPC分类号： H01L21/76254 , C30B29/06 , C30B33/005 , C30B33/04 , C30B33/06 , C30B33/10
摘要： In a method for producing an SOI wafer comprising steps of implanting hydrogen ions etc. from a surface of a bond wafer 21 to form an ion-implanted layer 24 inside the wafer, bonding the ion-implanted surface of the bond wafer and a surface of a base wafer 22 via an oxide film 23 or directly, and forming an SOI wafer by delaminating a part of the bond wafer at the ion-implanted layer by heat treatment, wherein a silicon wafer consisting of silicon single crystal grown by Chochralski method, which is occupied by N region outside OSF generated in a ring shape and has no defect region detected by Cu deposition method, is used as the bond wafer. Thereby, even in the case of forming an extremely thin SOI layer 27 such that, for example, its thickness is 200 nm or less, there is provided an SOI wafer which has an excellent electric property without causing micro pits by cleaning with hydrofluoric acid etc., and in addition, can be produced without increasing the number of process.
摘要翻译： 在制造SOI晶片的方法中，包括从接合晶片21的表面注入氢离子等以在晶片内形成离子注入层24的步骤，将接合晶片的离子注入表面和 通过氧化膜23或直接形成基底晶片22，并且通过热处理在离子注入层分层接合晶片的一部分而形成SOI晶片，其中由通过Chochralski方法生长的由硅单晶组成的硅晶片，其 被OS环境外的N区域所占据，并且没有通过Cu沉积法检测到缺陷区域，被用作接合晶片。 因此，即使在形成极薄的SOI层27的情况下，例如其厚度为200nm以下，则提供了通过用氢氟酸清洗而不引起微坑的电性能优异的SOI晶片 ，而且可以在不增加处理次数的情况下生产。
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