公开(公告)号：US06565822B1

公开(公告)日：2003-05-20

申请号：US09646713

申请日：2000-09-21

申请人： Ryoji Hoshi ,  Susumu Sonokawa ,  Masahiro Sakurada ,  Tomohiko Ohta ,  Izumi Fusegawa

发明人： Ryoji Hoshi ,  Susumu Sonokawa ,  Masahiro Sakurada ,  Tomohiko Ohta ,  Izumi Fusegawa

IPC分类号： C09B3326

CPC分类号： C30B29/06 ,  C30B15/203

摘要： An epitaxial silicon wafer, which has no projections having a size of 100 nm or more and a height of 5 nm or more on an epitaxial layer, and a method for producing an epitaxial silicon wafer, wherein a single crystal ingot containing no I-region is grown when a silicon single crystal is grown by the CZ method, and an epitaxial layer is deposited on a silicon wafer sliced from the single crystal ingot and containing no I-region for the entire surface. An epitaxial wafer of high quality with no projection-like surface distortion observed as particles on an epi-layer surface is provided by forming a wafer having no I-region for the entire surface from a single crystal and depositing an epitaxial layer thereon, and a single crystal having no I-region for entire plane is produced with good yield and high productivity, thereby improving productivity of epi-wafers and realizing cost reduction.

摘要翻译： 在外延层上没有尺寸为100nm以上且高度为5nm以上的外延硅晶片和外延硅晶片的制造方法，其中，不含I区域的单晶锭 当通过CZ法生长硅单晶时生长，并且在从单晶锭切片的硅晶片上沉积外延层，并且在整个表面上不含有I区。 通过从单晶形成整个表面没有I区的晶片并在其上沉积外延层来提供高品质的外延晶片，其没有观察到作为外延表面上的颗粒的投射状表面变形， 以良好的产率和高生产率生产不具有整个平面的I区的单晶，从而提高外延片的生产率并实现成本降低。

公开(公告)号：US06893499B2

公开(公告)日：2005-05-17

申请号：US10312921

申请日：2001-06-28

申请人： Izumi Fusegawa ,  Koji Kitagawa ,  Ryoji Hoshi ,  Masahiro Sakurada ,  Tomohiko Ohta

发明人： Izumi Fusegawa ,  Koji Kitagawa ,  Ryoji Hoshi ,  Masahiro Sakurada ,  Tomohiko Ohta

IPC分类号： C30B15/00 ,  C30B15/20

CPC分类号： C30B29/06 ,  C30B15/203

摘要： According to the present invention, there is disclosed a silicon single crystal wafer grown according to the CZ method which is a wafer having a diameter of 200 mm or more produced from a single crystal grown at a growth rate of 0.5 mm/min or more without doping except for a dopant for controlling resistance, wherein neither an octahedral void defect due to vacancies nor a dislocation cluster due to interstitial silicons exists as a grown-in defect, and a method for producing it. There can be provided a high quality silicon single crystal wafer having a large diameter wherein a silicon single crystal in which both of octahedral void defects and dislocation clusters which are growth defects are substantially eliminated is grown at higher rate compared with the conventional method by the usual CZ method, and furthermore by controlling a concentrations of interstitial oxygen in the crystal to be low, a precipitation amount is lowered and ununiformity of BMD in a plane of the wafer is improved, and provided a method for producing it.

摘要翻译： 根据本发明，公开了一种根据CZ方法生长的硅单晶晶片，其是由以0.5mm / min以上的生长速度生长的单晶产生的直径为200mm以上的晶片的晶片，没有 除了用于控制电阻的掺杂剂之外的掺杂，其中由于间隙硅而由空位引起的八面体空隙缺陷和位错簇都不作为生长缺陷而存在，以及其制造方法。 可以提供具有大直径的高质量硅单晶晶片，其中以常规方法与常规方法相比，以更高的速率生长其中八面体空隙缺陷和作为生长缺陷的位错簇基本上消除的硅单晶 CZ法，另外通过将晶体中的间隙氧的浓度控制得较低，降低析出量，提高晶片的平面内的BMD的不均匀性，并提供其制造方法。

公开(公告)号：US20140103492A1

公开(公告)日：2014-04-17

申请号：US14122356

申请日：2012-05-14

申请人： Izumi Fusegawa ,  Ryoji Hoshi ,  Susumu Sonokawa ,  Hisayuki Saito

发明人： Izumi Fusegawa ,  Ryoji Hoshi ,  Susumu Sonokawa ,  Hisayuki Saito

IPC分类号： H01L21/02 ,  H01L29/34

CPC分类号： H01L21/02024 ,  C30B15/00 ,  C30B15/14 ,  C30B15/20 ,  C30B15/203 ,  C30B29/06 ,  C30B33/00 ,  C30B33/02 ,  H01L21/3221 ,  H01L29/30 ,  H01L29/34

摘要： The present invention provides a method for producing a silicon wafer from a defect-free silicon single crystal grown by a CZ method, the method comprising: preparing a silicon wafer obtained by slicing the defect-free silicon single crystal and subjected to mirror-polishing; then performing a heat treatment step of subjecting the mirror-polished silicon wafer to heat treatment at a temperature of 500° C. or higher but 600° C. or lower for 4 hours or more but 6 hours or less; and performing a repolishing step of repolishing the silicon wafer after the heat treatment step such that a polishing amount becomes 1.5 μm or more. Therefore, it is an object to provide a method by which a silicon wafer can be produced at a high yield, the silicon wafer in which LPDs are reduced to a minimum, the silicon wafer with a low failure-incidence rate in an inspection step and a shipment stage.

摘要翻译： 本发明提供一种通过CZ方法生长的无缺陷硅单晶制造硅晶片的方法，该方法包括：制备通过对无缺陷的硅单晶进行切片并进行镜面抛光获得的硅晶片; 然后进行热处理步骤，使经镜面抛光的硅晶片在500℃以上但600℃以下的温度下进行4小时以上6小时以下的热处理; 并且在热处理步骤之后执行重新抛光硅晶片的重新抛光步骤，使得抛光量变为1.5μm以上。 因此，本发明的目的是提供一种可以以高产率制造硅晶片的方法，将LPD降低到最小的硅晶片，在检查步骤中具有低故障发生率的硅晶片，以及 出货阶段

公开(公告)号：US09337013B2

公开(公告)日：2016-05-10

申请号：US14122356

申请日：2012-05-14

申请人： Izumi Fusegawa ,  Ryoji Hoshi ,  Susumu Sonokawa ,  Hisayuki Saito

发明人： Izumi Fusegawa ,  Ryoji Hoshi ,  Susumu Sonokawa ,  Hisayuki Saito

IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B15/20 ,  H01L21/02 ,  H01L21/322 ,  H01L29/30 ,  C30B29/06 ,  C30B33/00 ,  C30B33/02 ,  H01L29/34

CPC分类号： H01L21/02024 ,  C30B15/00 ,  C30B15/14 ,  C30B15/20 ,  C30B15/203 ,  C30B29/06 ,  C30B33/00 ,  C30B33/02 ,  H01L21/3221 ,  H01L29/30 ,  H01L29/34

摘要： Methods for producing a silicon wafer from a defect-free silicon single crystal grown by a Czochralski (CZ) method are provided. The methods comprise: preparing a silicon wafer obtained by slicing the defect-free silicon single crystal and subjected to mirror-polishing; then performing a heat treatment step of subjecting the mirror-polished silicon wafer to heat treatment at a temperature of 500° C. or higher but 600° C. or lower for 4 hours or more but 6 hours or less; and performing a repolishing step of repolishing the silicon wafer after the heat treatment step such that a polishing amount becomes 1.5 μm or more. Therefore, it is an object to provide a method by which a silicon wafer can be produced at a high yield, the silicon wafer in which Light Point Defects (LPDs) are reduced to a minimum, the silicon wafer with a low failure-incidence rate in an inspection step and a shipment stage.

摘要翻译： 提供了通过Czochralski（CZ）方法生长的无缺陷硅单晶制造硅晶片的方法。 所述方法包括：制备通过将无缺陷的硅单晶切片并进行镜面抛光获得的硅晶片; 然后进行热处理步骤，使经镜面抛光的硅晶片在500℃以上但600℃以下的温度下进行4小时以上6小时以下的热处理; 并且在热处理步骤之后执行重新抛光硅晶片的重新抛光步骤，使得抛光量变为1.5μm以上。 因此，本发明的目的是提供一种以高产率制造硅晶片的方法，将光点缺陷（LPD）降低到最小的硅晶片，故障发生率低的硅晶片 在检查步骤和出货阶段。

公开(公告)号：US06632280B2

公开(公告)日：2003-10-14

申请号：US09937132

申请日：2001-09-21

申请人： Ryoji Hoshi ,  Koji Kitagawa ,  Izumi Fusegawa ,  Tomohiko Ohta

发明人： Ryoji Hoshi ,  Koji Kitagawa ,  Izumi Fusegawa ,  Tomohiko Ohta

IPC分类号： C30B1500

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/206 ,  Y10T117/1032 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： An apparatus for growing a single crystal (20) comprising at least a main chamber (1) enclosing a crucible (5, 6) for accommodating a raw material melt (4) and a heater (7) for heating the raw material melt and a pulling chamber (2) continuously provided above the main chamber, into which a grown single crystal is pulled and stored, wherein the apparatus further comprises a cooling cylinder (11) that extends at least from a ceiling of the main chamber toward a raw material melt surface so as to surround a single crystal under pulling (3) and is forcibly cooled with a cooling medium, and an auxiliary cooling member (13) extending below the cooling cylinder and having a cylindrical shape or a shape tapered toward the downward direction. There is provided an apparatus for growing a single crystal that can exert cooling effect on a grown single crystal to the maximum extent so as to accelerate the crystal growth rate and safely produce a single crystal without leakage of cooling medium due to breakage etc.

摘要翻译： 包括至少包围坩埚的主室（ 1 ）的单晶生长装置（ 20 用于容纳原材料熔体（ 4 ）的加热器（ 7 < / BOLD> ），用于加热原料熔体和在主室上方连续设置的拉动室（ 2 ），拉出并存储生长的单晶 ，其中所述装置还包括至少从主室的天花板朝向原料熔体表面延伸的冷却圆筒（ 11 PDAT>），以围绕单晶体 （ 3 ），并用冷却介质强制冷却，并在下方延伸的辅助冷却构件（ 13 ） 具有圆筒形状或朝向下方向逐渐变细的形状。 提供了一种用于生长可以最大程度地对生长的单晶施加冷却效果的单晶的装置，以便加速晶体生长速率并且安全地生产单晶，而不会由于断裂等导致冷却介质的泄漏。 PTEXT>

公开(公告)号：US06592662B2

公开(公告)日：2003-07-15

申请号：US09959381

申请日：2001-10-24

申请人： Izumi Fusegawa ,  Ryoji Hoshi ,  Kouichi Inokoshi ,  Tomohiko Ohta

发明人： Izumi Fusegawa ,  Ryoji Hoshi ,  Kouichi Inokoshi ,  Tomohiko Ohta

IPC分类号： C30B1500

CPC分类号： C30B29/06 ,  C30B15/305 ,  Y10S117/917

摘要： In a method manufacturing a silicon single crystal 8 according to an MCZ method, a flow rate of an inert gas flowing in a growth furnace 1 during growth of the silicon single crystal 8 and/or a pressure in the growth furnace 1 is altered according to a pulling amount of the silicon single crystal 8 to adjust an interstitial oxygen concentration therein. By altering a flow rate of an inert gas flowing in the growth furnace or a pressure therein, an amount of oxygen evaporating as an oxide from a surface of a silicon melt 10 in the vicinity of a crystal growth interface can be easily adjusted, and thereby, an oxygen amount included in the silicon melt 10 can be controlled with ease.

公开(公告)号：US06764548B2

公开(公告)日：2004-07-20

申请号：US10204278

申请日：2002-08-20

申请人： Ryoji Hoshi ,  Takahiro Yanagimachi ,  Izumi Fusegawa ,  Tomohiko Ohta ,  Yuuichi Miyahara ,  Tetsuya Igarashi

发明人： Ryoji Hoshi ,  Takahiro Yanagimachi ,  Izumi Fusegawa ,  Tomohiko Ohta ,  Yuuichi Miyahara ,  Tetsuya Igarashi

IPC分类号： C30B3500

CPC分类号： C30B15/14 ,  C30B15/206 ,  C30B29/06 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： The present invention provides an apparatus and a method for producing a silicon semiconductor single crystal which can stabilize and homogenize an amount of precipitated oxygen in the direction of the crystal growth axis when growing a silicon semiconductor single crystal. The apparatus for producing a silicon semiconductor single crystal by the Czochralski method comprises a main growth furnace having a crucible retaining silicon melt disposed therein for growing a silicon semiconductor single crystal, and an upper growth furnace for housing therein and cooling the silicon semiconductor single crystal pulled from the silicon melt, wherein the upper growth furnace communicated to a ceiling section of the main growth furnace is provided with an upper insulating member for surrounding a pulled silicon semiconductor single crystal.

摘要翻译： 本发明提供了一种用于制造硅半导体单晶的装置和方法，当生长硅半导体单晶时，可以使晶体生长轴方向上的沉淀氧量稳定和均化。 通过切克劳斯基法生产硅半导体单晶的装置包括：主生长炉，其具有保存硅熔体的坩埚，用于生长硅半导体单晶;以及上部生长炉，用于容纳在其中并冷却硅半导体单晶拉伸 与硅熔体相连，其中与主生长炉的顶部连通的上部生长炉设置有用于围绕拉制硅半导体单晶的上部绝缘构件。

公开(公告)号：US6117231A

公开(公告)日：2000-09-12

申请号：US290261

申请日：1999-04-13

申请人： Izumi Fusegawa ,  Toshirou Hayashi ,  Ryoji Hoshi ,  Tomohiko Ohta

发明人： Izumi Fusegawa ,  Toshirou Hayashi ,  Ryoji Hoshi ,  Tomohiko Ohta

IPC分类号： C30B29/06 ,  C30B15/00

CPC分类号： C30B29/06 ,  C30B15/00

摘要： A silicon wafer sliced from a silicon single crystal having a low oxygen concentration is used as an epitaxial substrate to provide semiconductor silicon single crystal wafers exhibiting good electrical characteristics at a low cost. A semiconductor silicon single crystal having a resistivity in a range of 0.005 to 0.02 .OMEGA..multidot.cm and an oxygen concentration of 12.times.10.sup.17 atoms/cm.sup.3 (ASTM'79) or less is manufactured by a Czochralski (CZ) method. The resulting silicon single crystal is shaped into a silicon single crystal substrate on which a silicon single crystal is epitaxially grown.

摘要翻译： 使用从低氧浓度的硅单晶切片的硅晶片作为外延基板，以低成本提供具有良好电特性的半导体硅单晶晶片。 通过Czochralski（CZ）法制造电阻率为0.005〜0.02ΩEG·xcm，氧浓度为12×10 17 atoms / cm 3（ASTM'79）以下的半导体硅单晶。 将所得的硅单晶成形为其上外延生长硅单晶的硅单晶衬底。

公开(公告)号：US06632411B2

公开(公告)日：2003-10-14

申请号：US09979519

申请日：2001-11-23

申请人： Ryoji Hoshi ,  Izumi Fusegawa ,  Tomohiko Ohta ,  Shigemaru Maeda

发明人： Ryoji Hoshi ,  Izumi Fusegawa ,  Tomohiko Ohta ,  Shigemaru Maeda

IPC分类号： C30B1502

CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/206

摘要： The present invention provides a silicon wafer sliced from a silicon single crystal ingot grown by the Czochralski method under such conditions that V-rich region should become dominant, wherein count number of particles having a size of 0.1 &mgr;m or more is 1 count/cm2 or less when particles are counted by using a particle counter and a method for producing a silicon single crystal. Thus, there is provided a production technique that can improve productivity and reduce cost for high quality silicon wafers of excellent device characteristics by further reducing density and size of defects such as COP.

摘要翻译： 本发明提供一种硅晶片，其由在富V区应变为主导的条件下，通过切克劳斯基法（Czochralski method）生长的硅单晶锭切片，其中具有0.1μm以上的粒子的计数为1个/ 当通过使用粒子计数器对颗粒进行计数时，HIL> <2 或更小，以及制造硅单晶的方法。 因此，提供了通过进一步减小诸如COP的缺陷的密度和尺寸来提高生产率并降低高质量硅晶片的成本的生产技术。

公开(公告)号：US07201801B2

公开(公告)日：2007-04-10

申请号：US10503721

申请日：2003-09-08

申请人： Susumu Sonokawa ,  Ryoji Hoshi ,  Wataru Sato ,  Tomohiko Ohta

发明人： Susumu Sonokawa ,  Ryoji Hoshi ,  Wataru Sato ,  Tomohiko Ohta

IPC分类号： C30B35/00

CPC分类号： C30B15/30 ,  C30B15/14 ,  C30B30/04 ,  C30B35/00 ,  Y10S117/90 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： The present invention provides a heater for manufacturing a crystal by the Czochralski method comprising at least terminal portions supplied with current and a heat generating portion by resistance heating, and being arranged so as to surround a crucible containing a raw material melt, wherein the heater has a uniform heat generation distribution to the raw material melt after deformation while in use during crystal manufacture. It is thus possible to prevent hindrance of monocrystallization and unstable crystal quality caused by ununiform temperature in the raw material melt due to deformation of the shape of the heater's heat generating portion while in use during crystal manufacture.

摘要翻译： 本发明提供了一种通过切克劳斯基法制造晶体的加热器，其至少包括通过电阻加热供给电流的端子部分和发热部分，并且被布置成围绕包含原料熔体的坩埚，其中加热器具有 在晶体制造期间在使用时在变形后对原料熔体均匀发热分布。 因此，在晶体制造时，由于加热器的发热部的形状的变形，能够防止因原料熔融体的不均匀温度引起的单晶化和不稳定的晶体质量的阻碍。