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12 条记录 (耗时 0.027 秒)

    Pyrrole derivatives
    2.
    发明授权
    Pyrrole derivatives 失效
    吡咯衍生物

    公开(公告)号：US06759429B2

    公开(公告)日：2004-07-06

    申请号：US10352067

    申请日：2003-01-28

    申请人： Teruhisa Tokunaga ,  William Ewan Hume ,  Makoto Kitoh ,  Ryu Nagata

    发明人： Teruhisa Tokunaga ,  William Ewan Hume ,  Makoto Kitoh ,  Ryu Nagata

    IPC分类号： A61K304015

    CPC分类号： C07D207/33 ,  C07D207/333 ,  C07D401/06 ,  C07D403/06 ,  C07D471/04

    摘要： Pyrrole derivatives represented by the following formula: wherein Ring Z is an optionally substituted pyrrole ring, etc.; W2 is —CO—, —SO2—, an optionally substituted C1-C4 alkylene, etc.; Ar2 is an optionally substituted aryl, etc.; W1 and Ar1 mean the following (1) and (2): (1) W1 is an optionally substituted C1-C4 alkylene, etc.; Ar1 is an optionally substituted bicyclic heteroaryl having 1 to 4 nitrogen atoms as ring-forming atoms: (2) W1 is an optionally substituted C2-C5 alkylene, an optionally substituted C2-C5 alkenylene, etc.; and Ar1 is an aryl or monocyclic heteroaryl, which are substituted by carboxyl, an alkoxycarbonyl, etc. at the ortho- or meta-position thereof with respect to the binding position of W1, or a pharmaceutically acceptable salt thereof. These compounds are useful as medicaments such as a fibrosis inhibitor for organs or tissues.

    摘要翻译： 由下式表示的吡咯衍生物：其中环Z是任选取代的吡咯环等; W 2是-CO - ， - SO 2 - ，任选取代的C 1 -C 4亚烷基等; Ar 2是任选取代的芳基等; W 1和Ar 1表示以下（1）和（2）：（1）W 1是任选取代的C 1 -C 4亚烷基等; Ar 1是具有1-4个氮原子的任选取代的双环杂芳基作为成环原子：（2）W 1是任选取代的C 2 -C 5亚烷基，任选取代的C 2 -C 5亚烯基等; 并且Ar 1是在相对于W 1的结合位置的邻位或间位被羧基，烷氧基羰基等取代的芳基或单环杂芳基，或其药学上可接受的盐 。 这些化合物可用作药物如用于器官或组织的纤维化抑制剂。

    Plasma processing method and apparatus
    4.
    发明授权
    Plasma processing method and apparatus 失效
    等离子体处理方法和装置

    公开(公告)号：US5651867A

    公开(公告)日：1997-07-29

    申请号：US591935

    申请日：1990-10-02

    申请人： Yuichi Kokaku ,  Hiroyuki Kataoka ,  Makoto Kitoh ,  Shigehiko Fujimaki ,  Satoshi Matsunuma ,  Kenji Furusawa ,  Nobuo Nakagawa ,  Katsuo Abe ,  Masaaki Hayashi

    发明人： Yuichi Kokaku ,  Hiroyuki Kataoka ,  Makoto Kitoh ,  Shigehiko Fujimaki ,  Satoshi Matsunuma ,  Kenji Furusawa ,  Nobuo Nakagawa ,  Katsuo Abe ,  Masaaki Hayashi

    IPC分类号： C23C14/34 ,  C23C14/56 ,  C23C16/509 ,  G11B5/84 ,  G11B5/851 ,  H01J37/32

    CPC分类号： H01J37/32623 ,  C23C14/566 ,  C23C16/5096 ,  G11B5/84 ,  G11B5/851 ,  H01J37/32743

    摘要： A plasma processing apparatus comprising: a vacuum container; an evacuation means for keeping the interior of the vacuum container at a pressure not higher than atmospheric pressure; a substrate support device for supporting a substrate to be subjected to plasma processing; an electrode for generating plasma in cooperation with the substrate support; a voltage supply for applying a voltage to the electrode; a gas introducing system for introducing a gaseous material into a space where the plasma is produced; a surrounding member for enclosing the space above the substrate support, and a drive for relatively moving the surrounding member to space an end of the surrounding member proximate from the substrate from at least one of the substrate support and the substrate supported thereon by a distance which is short enough to suppress plasma leakage during the plasma processing and to position the end of the surrounding member away from said at least one of the substrate support and the substrate thereon for charging and discharging of the substrate.

    摘要翻译： 一种等离子体处理装置，包括：真空容器; 用于将真空容器的内部保持在不高于大气压的压力的排气装置; 用于支撑待进行等离子体处理的基板的基板支撑装置; 用于与衬底支撑件协作产生等离子体的电极; 用于向电极施加电压的电压源; 用于将气态物质引入制造等离子体的空间中的气体导入系统; 用于封闭衬底支撑件上方的空间的周围构件以及用于相对移动周围构件的驱动器，用于将基板支撑件和支撑在其上的衬底中的至少一个上的衬底附近的邻近基板的一端远离一定距离， 足够短以抑制等离子体处理期间的等离子体泄漏并且使周围部件的端部远离所述至少一个基板支撑件和其上的基板，以对基板进行充电和放电。

    Plasma surface treatment method and apparatus
    5.
    发明授权
    Plasma surface treatment method and apparatus 失效
    等离子体表面处理方法和装置

    公开(公告)号：US5300189A

    公开(公告)日：1994-04-05

    申请号：US51701

    申请日：1987-05-20

    申请人： Yuichi Kokaku ,  Makoto Kitoh ,  Yoshinori Honda

    发明人： Yuichi Kokaku ,  Makoto Kitoh ,  Yoshinori Honda

    IPC分类号： C23C14/02 ,  B29C59/14 ,  C23C16/50 ,  C23F4/00 ,  B05D5/00 ,  B01J15/00

    CPC分类号： B29C59/14 ,  B29C2037/90

    摘要： A surface treatment method and apparatus permitting the treatment of a film with plasma with a high treatment speed and a high efficiency without uselessly complicating the construction of a device for realizing it are disclosed. The area where the counter electrode is in contact with the plasma is sufficiently larger than the area where the rotating electrode is in contact therewith. The ratio of the areas is preferably not smaller than 1.5 and the etching speed may be increased to a value more than ten times as great as that obtained by a prior art method.

    摘要翻译： 公开了一种能够以高处理速度和高效率处理具有等离子体的膜的表面处理方法和装置，而没有使实现装置的结构无任何复杂化。 对电极与等离子体接触的区域比旋转电极与其接触的面积充分大。 面积比优选为1.5以上，蚀刻速度可以提高到通过现有技术得到的数值的10倍以上的值。