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公开(公告)号：US09459414B2
公开(公告)日：2016-10-04
申请号：US14163355
申请日：2014-01-24
Applicant: Samsung Electronics Co., Ltd
Inventor： Sung-Dong Suh , Kyoung-Won Na , Yoon-Dong Park , Beom-Suk Lee , Dong-Mo Im
IPC: G02B6/32 , G02B6/42 , H01L31/167
CPC classification number: G02B6/4206 , H01L31/167
Abstract: An optical coupling system is provided which includes a first layer structure and a second layer structure. The first layer structure includes a plurality of layers sequentially stacked on a substrate, and is configured to compresses a beam emitted from a light source along a direction substantially perpendicular to a top surface of the substrate. The second layer structure is formed on the substrate, and is configured to compresses the beam, having passed through the first layer structure, along a direction substantially parallel to the top surface of the substrate.
Abstract translation: 提供一种光耦合系统，其包括第一层结构和第二层结构。 第一层结构包括顺序地堆叠在基板上的多个层，并且被配置为沿着基本上垂直于基板的顶表面的方向压缩从光源发射的光束。 第二层结构形成在基板上，并且被构造成沿着基本上平行于基板的顶表面的方向压缩已经穿过第一层结构的梁。
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公开(公告)号：US09897753B2
公开(公告)日：2018-02-20
申请号：US15388951
申请日：2016-12-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin-Kwon Bok , Kyoung-Ho Ha , Dong-Jae Shin , Seong-Gu Kim , Kwan-Sik Cho , Beom-Suk Lee , Jung-Ho Cha , Hyun-Il Byun , Dong-Hyun Kim , Yong-Hwack Shin , Jung-Hye Kim
CPC classification number: G02B6/1228 , G02B6/125 , G02B6/136 , G02B2006/12097
Abstract: An optical device includes a substrate; a trench in a portion of the substrate; a clad layer arranged in the trench; a first structure arranged on the clad layer to have a first depth; and a second structure arranged on the clad layer to have a second depth different from the first depth.
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公开(公告)号：US10797092B2
公开(公告)日：2020-10-06
申请号：US16428940
申请日：2019-05-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Gwi-Deok Ryan Lee , Kwang-Min Lee , Beom-Suk Lee , Tae-Yon Lee
IPC: H01L27/146 , H01L27/28 , H01L27/30
Abstract: An image sensor of reduced chip size includes a semiconductor substrate having an active pixel region in which a plurality of active pixels are disposed and a power delivery region in which a pad is disposed. A plurality of first transparent electrode layers is disposed over the semiconductor substrate, respectively corresponding to the plurality of active pixels. A second transparent electrode layer is integrally formed across the active pixels. An organic photoelectric layer is disposed between the plurality of first transparent electrode layers and the second transparent electrode layer. An interconnection layer is located at a level that is the same as or higher than an upper surface of the pad with respect to an upper main surface of the semiconductor substrate. The interconnection layer extends from the pad to the second transparent electrode layer, and includes a connector electrically connecting the pad and the second transparent electrode layer.
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公开(公告)号：US10347672B2
公开(公告)日：2019-07-09
申请号：US15653537
申请日：2017-07-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Gwi-Deok Ryan Lee , Kwang-Min Lee , Beom-Suk Lee , Tae-Yon Lee
IPC: H01L27/28 , H01L27/146 , H01L27/30
Abstract: An image sensor of reduced chip size includes a semiconductor substrate having an active pixel region in which a plurality of active pixels are disposed and a power delivery region in which a pad is disposed. A plurality of first transparent electrode layers is disposed over the semiconductor substrate, respectively corresponding to the plurality of active pixels. A second transparent electrode layer is integrally formed across the active pixels. An organic photoelectric layer is disposed between the plurality of first transparent electrode layers and the second transparent electrode layer. An interconnection layer is located at a level that is the same as or higher than an upper surface of the pad with respect to an upper main surface of the semiconductor substrate. The interconnection layer extends from the pad to the second transparent electrode layer, and includes a connector electrically connecting the pad and the second transparent electrode layer.
