公开(公告)号：US11367620B2

公开(公告)日：2022-06-21

申请号：US17037811

申请日：2020-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Hyuk Kim ,  Gi-Gwan Park ,  Tae-Young Kim ,  Dong-Suk Shin

IPC: H01L21/3065 ,  H01L29/66 ,  H01L29/78 ,  H01L21/311 ,  H01L21/02 ,  H01L29/165 ,  H01L29/161

Abstract: Methods for fabricating semiconductor devices include forming a fin-type pattern protruding on a substrate, forming a gate electrode intersecting the fin-type pattern, forming a first recess adjacent to the gate electrode and within the fin-type pattern by using dry etching, forming a second recess by treating a surface of the first recess with a surface treatment process including a deposit process and an etch process, and forming an epitaxial pattern in the second recess.

公开(公告)号：US20210013044A1

公开(公告)日：2021-01-14

申请号：US17037811

申请日：2020-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Hyuk Kim ,  Gi-Gwan Park ,  Tae-Young Kim ,  Dong-Suk Shin

IPC: H01L21/3065 ,  H01L29/66 ,  H01L21/311 ,  H01L21/02 ,  H01L29/78

Abstract: Methods for fabricating semiconductor devices include forming a fin-type pattern protruding on a substrate, forming a gate electrode intersecting the fin-type pattern, forming a first recess adjacent to the gate electrode and within the fin-type pattern by using dry etching, forming a second recess by treating a surface of the first recess with a surface treatment process including a deposit process and an etch process, and forming an epitaxial pattern in the second recess.

公开(公告)号：US09847224B2

公开(公告)日：2017-12-19

申请号：US14519516

申请日：2014-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Hyuk Kim ,  Geo-Myung Shin ,  Dong-Suk Shin

IPC: H01L21/311 ,  H01L29/16 ,  H01L21/02 ,  H01L21/8238 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/165 ,  H01L21/84 ,  H01L29/66 ,  H01L29/78 ,  H01L27/12 ,  H01L27/11

CPC classification number: H01L21/02532 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/823431 ,  H01L21/823456 ,  H01L21/823814 ,  H01L21/823878 ,  H01L21/845 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848

Abstract: A semiconductor device includes: a substrate including a plurality of first active regions and a plurality of second active regions; a plurality of first gate structures formed above the first active regions, respectively, and a plurality of second gate structures formed above the second active regions, respectively; and a plurality of first source/drain layers corresponding to the first gate structures, respectively, and a plurality of second source/drain layers corresponding to the second gate structures, respectively, wherein a width of each of the first source/drain layers is smaller than a width of each of the second source/drain layers.

公开(公告)号：US09538099B2

公开(公告)日：2017-01-03

申请号：US14608696

申请日：2015-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Hyuk Kim ,  Dong Hun Lee ,  Tae Ho Lee ,  Man Seung Cho

IPC: H04N5/32 ,  A61B6/00

CPC classification number: H04N5/32 ,  A61B6/4233 ,  A61B6/5205 ,  A61B6/542 ,  H04N5/3454

Abstract: Disclosed herein is an X-ray imaging apparatus including: a gate driver configured to apply a turn-on signal to a plurality of gate lines; and a readout circuit configured to read out a signal from the plurality of gate lines, wherein if an X-ray signal is detected from a gate line of the plurality of gate lines, the gate driver changes a turn-on time period of the turn-on signal.

Abstract translation: 本文公开了一种X射线成像装置，包括：门驱动器，被配置为将接通信号施加到多个栅极线; 以及读出电路，被配置为从多个栅极线读出信号，其中如果从多个栅极线的栅极线检测到X射线信号，则栅极驱动器改变转向的接通时间周期 - 信号。

公开(公告)号：US09337031B2

公开(公告)日：2016-05-10

申请号：US14516603

申请日：2014-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Hyuk Kim ,  Geo-Myung Shin ,  Dong-Suk Shin

IPC: H01L21/8234 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L29/08 ,  H01L29/165

CPC classification number: H01L29/7851 ,  H01L21/0245 ,  H01L21/02494 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02587 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/823431 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A method of manufacturing a semiconductor device includes partially removing an upper portion of an active fin of a substrate loaded in a chamber to form a trench; and forming a source/drain layer in the trench, which includes providing a silicon source gas, a germanium source gas, an etching gas and a carrier gas into the chamber to perform a selective epitaxial growth (SEG) process using a top surface of the active fin exposed by the trench as a seed so that a silicon-germanium layer is grown; and purging the chamber by providing the carrier gas into the chamber to etch the silicon-germanium layer.

Abstract translation: 一种制造半导体器件的方法包括：部分去除负载在腔室中的衬底的有源鳍片的上部，以形成沟槽; 以及在所述沟槽中形成源极/漏极层，所述源极/漏极层包括提供硅源气体，锗源气体，蚀刻气体和载气，以进入所述腔室中，以使用所述顶部表面进行选择性外延生长（SEG） 活性鳍作为种子由沟槽暴露，使得硅 - 锗层生长; 以及通过将载气提供到所述室中来清洗所述室，以蚀刻所述硅 - 锗层。

公开(公告)号：US10796919B2

公开(公告)日：2020-10-06

申请号：US15287268

申请日：2016-10-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Hyuk Kim ,  Gi-Gwan Park ,  Tae-Young Kim ,  Dong-Suk Shin

IPC: H01L21/3065 ,  H01L29/66 ,  H01L21/311 ,  H01L21/02 ,  H01L29/78 ,  H01L29/165 ,  H01L29/161

Abstract: Methods for fabricating semiconductor devices include forming a fin-type pattern protruding on a substrate, forming a gate electrode intersecting the fin-type pattern, forming a first recess adjacent to the gate electrode and within the fin-type pattern by using dry etching, forming a second recess by treating a surface of the first recess with a surface treatment process including a deposit process and an etch process, and forming an epitaxial pattern in the second recess.

公开(公告)号：US09728645B2

公开(公告)日：2017-08-08

申请号：US15146106

申请日：2016-05-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Hyuk Kim ,  Geo-Myung Shin ,  Dong-Suk Shin

IPC: H01L21/8234 ,  H01L29/78 ,  H01L21/02 ,  H01L29/66 ,  H01L29/08 ,  H01L29/165

CPC classification number: H01L29/7851 ,  H01L21/0245 ,  H01L21/02494 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02587 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/823431 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A method of manufacturing a semiconductor device includes partially removing an upper portion of an active fin of a substrate loaded in a chamber to form a trench; and forming a source/drain layer in the trench, which includes providing a silicon source gas, a germanium source gas, an etching gas and a carrier gas into the chamber to perform a selective epitaxial growth (SEG) process using a top surface of the active fin exposed by the trench as a seed so that a silicon-germanium layer is grown; and purging the chamber by providing the carrier gas into the chamber to etch the silicon-germanium layer.

公开(公告)号：US20170110327A1

公开(公告)日：2017-04-20

申请号：US15287268

申请日：2016-10-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Hyuk Kim ,  Gi-Gwan Park ,  Tae-Young Kim ,  Dong-Suk Shin

IPC: H01L21/3065 ,  H01L29/66

Abstract: Methods for fabricating semiconductor devices include forming a fin-type pattern protruding on a substrate, forming a gate electrode intersecting the fin-type pattern, forming a first recess adjacent to the gate electrode and within the fin-type pattern by using dry etching, forming a second recess by treating a surface of the first recess with a surface treatment process including a deposit process and an etch process, and forming an epitaxial pattern in the second recess.