公开(公告)号：US10707254B2

公开(公告)日：2020-07-07

申请号：US16152625

申请日：2018-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taeyon Lee ,  Gwideokryan Lee ,  Myungwon Lee

IPC: H01L27/146

Abstract: Semiconductor devices are provided. The semiconductor devices may include a substrate, a device isolation pattern in the substrate to electrically isolate a first pixel and a second pixel from each other, a conductive pattern in the device isolation pattern, and a doping layer on a side surface of the device isolation pattern. The doping layer may have a conductivity type different from a conductivity type of the substrate.

公开(公告)号：US20190043902A1

公开(公告)日：2019-02-07

申请号：US16152625

申请日：2018-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： TAEYON LEE ,  Gwideokryan Lee ,  Myungwon Lee

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14665 ,  H01L27/14689

Abstract: Semiconductor devices are provided. The semiconductor devices may include a substrate, a device isolation pattern in the substrate to electrically isolate a first pixel and a second pixel from each other, a conductive pattern in the device isolation pattern, and a doping layer on a side surface of the device isolation pattern. The doping layer may have a conductivity type different from a conductivity type of the substrate.

公开(公告)号：US09293489B2

公开(公告)日：2016-03-22

申请号：US14315730

申请日：2014-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myungwon Lee ,  Sangchul Sul ,  Hirosige Goto ,  Sae-Young Kim ,  Kang-Su Lee ,  Gwideokryan Lee ,  Masaru Ishii

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464

Abstract: An image sensor includes a semiconductor substrate, a storage node region in the semiconductor substrate, an insulating portion on the semiconductor substrate, a via contact extending through the insulating portion, a photo-electric converter in the semiconductor substrate and spaced apart from the storage node region, an organic photo-electric layer on the insulating portion, and a buffer interposed between and electrically connecting the via contact and the storage node region.

Abstract translation: 图像传感器包括半导体衬底，半导体衬底中的存储节点区域，半导体衬底上的绝缘部分，延伸穿过绝缘部分的通孔接触，半导体衬底中的光电转换器，并与存储节点间隔开 区域，绝缘部分上的有机光电层，以及插入在电触点和存储节点区域之间并将其电连接的缓冲器。

公开(公告)号：US20240321930A1

公开(公告)日：2024-09-26

申请号：US18612450

申请日：2024-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongsoon Kang ,  Gyunha Park ,  Daehoon Kim ,  Jongeun Park ,  Gwideokryan Lee ,  Dongseok Cho

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14627

Abstract: Provided is an image sensor including a first substrate including a first surface to which light is incident and a second surface opposite the first surface, a second substrate facing the second surface of the first substrate, a wiring layer between the first substrate and the second substrate and including an insulating layer and a conductive structure in the insulating layer, a first floating diffusion region provided in the first substrate, a first through electrode penetrating through the second substrate and electrically connected to the first floating diffusion region through the conductive structure, a second floating diffusion region provided in the second substrate, and a landing pad arranged on a bottom surface of the second substrate and electrically connected to the second floating diffusion region, wherein a bottom surface of the first through electrode may be in contact with the landing pad.

公开(公告)号：US10134792B2

公开(公告)日：2018-11-20

申请号：US15499333

申请日：2017-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taeyon Lee ,  Gwideokryan Lee ,  Myungwon Lee

IPC: H01L27/146

Abstract: Semiconductor devices are provided. The semiconductor devices may include a substrate, a device isolation pattern in the substrate to electrically isolate a first pixel and a second pixel from each other, a conductive pattern in the device isolation pattern, and a doping layer on a side surface of the device isolation pattern. The doping layer may have a conductivity type different from a conductivity type of the substrate.

公开(公告)号：US20180061873A1

公开(公告)日：2018-03-01

申请号：US15499333

申请日：2017-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： TAEYON LEE ,  Gwideokryan Lee ,  Myungwon Lee

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14643

Abstract: Semiconductor devices are provided. The semiconductor devices may include a substrate, a device isolation pattern in the substrate to electrically isolate a first pixel and a second pixel from each other, a conductive pattern in the device isolation pattern, and a doping layer on a side surface of the device isolation pattern. The doping layer may have a conductivity type different from a conductivity type of the substrate.