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公开(公告)号：US20200207790A1
公开(公告)日：2020-07-02
申请号：US16564125
申请日：2019-09-09
Applicant: Samsung Electronics Co., Ltd. , Adeka Corporation
Inventor： Gyu-Hee Park , Takanori Koide , Yoshiki Manabe , Masayuki Kimura , Akio Saito , Jaesoon Lim , Younjoung Cho
Abstract: Provided are an aluminum compound and a method for manufacturing a semiconductor device using the same. The aluminum compound may be represented by Formula 1.
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公开(公告)号：US12051586B2
公开(公告)日：2024-07-30
申请号：US17022198
申请日：2020-09-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seung-Min Ryu , Jiyu Choi , Gyu-Hee Park , Younjoung Cho
IPC: H01L21/02 , C01G19/00 , C07C211/08 , C23C16/08 , C23C16/18 , C23C16/30 , C23C16/455
CPC classification number: H01L21/02205 , C01G19/00 , C07C211/08 , C23C16/08 , C23C16/18 , C23C16/303 , C23C16/45553
Abstract: A method of manufacturing a semiconductor device includes providing a metal precursor on a substrate, and providing a reactant and a co-reactant to form a metal nitride layer by reaction with the metal precursor, the reactant being a nitrogen source, the co-reactant being an organometallic compound represented by Chemical Formula 1:
M2L1)n [Chemical Formula 1]
In Chemical Formula 1, M2 may be selected from Sn, In, and Ge, n may be 2, 3, or 4, and each L1 may independently be hydrogen, a halogen, or a group represented by Chemical Formula 2.
In Chemical Formula 2, x may be 0, 1, 2, 3, 4, or 5 and y may be 0 or 1. When x is 0, y may be 1. R1, R2, R3, and R4 may each independently be hydrogen, an alkyl group having 1 to 5 carbons, or an aminoalkyl group having 1 to 5 carbons.
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3.发明公开
公开(公告)号：US20230220213A1
公开(公告)日：2023-07-13
申请号：US18145142
申请日：2022-12-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： JAE WOON KIM , Seung-min Ryu , Haruyoshi Sato , Kazuya Saito , Masayuki Kimura , Takahiro Yoshii , Tsubasa Shiratori , Min Jae Sung , Gyu-Hee Park , Youn Joung Cho
CPC classification number: C09D1/00 , C07F3/003 , H10B12/033
Abstract: Compositions for manufacturing a thin film are provided. The compositions may include a compound having a structure of Chemical Formula 1:
M may be strontium (Sr) or barium (Ba), X1 and X2 may each independently be oxygen (O) or a substituted or unsubstituted alkylamino group having 1 to 5 carbon atoms, R1 and R2 may each independently be a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms or a substituted or unsubstituted perfluoro alkyl group having 1 to 5 carbon atoms, R3 may be hydrogen or a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, L may be a substituted or unsubstituted polyether having 1 to 6 oxygen atoms, or a substituted or unsubstituted polyamine having 1 to 6 nitrogen atoms, or a substituted or unsubstituted polyetheramine having 1 to 6 oxygen atoms or nitrogen atoms, and n may be an integer of 1 to 6.
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公开(公告)号：US11524973B2
公开(公告)日：2022-12-13
申请号：US16857292
申请日：2020-04-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seung-Min Ryu , Akio Saito , Takanori Koide , Atsushi Yamashita , Kazuki Harano , Gyu-Hee Park , Soyoung Lee , Jaesoon Lim , Younjoung Cho
IPC: C07F9/00 , H01L21/285 , H01L51/00 , H01L49/02
Abstract: Described herein are metal compounds and methods of fabricating semiconductor devices using the same. The metal compounds include a material of Chemical Formula 1.
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公开(公告)号：US11901191B2
公开(公告)日：2024-02-13
申请号：US17535933
申请日：2021-11-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Eun Hyea Ko , Hee Yeon Jeong , Jun Hee Cho , Gyu-Hee Park , Joong Jin Park , Byeong Il Yang , Youn Joung Cho , Ji Yu Choi
IPC: H01L21/311
CPC classification number: H01L21/31116
Abstract: An atomic layer etching method capable of precisely etching a metal thin film at units of atomic layer from a substrate including the metal thin film, includes forming a metal layer on a substrate, and etching at least a portion of the metal layer. The etching at least a portion of the metal layer includes at least one etching cycle. The at least one etching cycle includes supplying an active gas onto the metal layer, and supplying an etching support gas after supplying the active gas. The etching support gas is expressed by the following general formula
wherein each of R1, R2, R3, R4 and R5 independently includes hydrogen or a C1-C4 alkyl group, and N is nitrogen.
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公开(公告)号：US11332486B2
公开(公告)日：2022-05-17
申请号：US16564125
申请日：2019-09-09
Applicant: SAMSUNG ELECTRONICS CO., LTD. , ADEKA CORPORATION
Inventor： Gyu-Hee Park , Takanori Koide , Yoshiki Manabe , Masayuki Kimura , Akio Saito , Jaesoon Lim , Younjoung Cho
Abstract: Provided are an aluminum compound and a method for manufacturing a semiconductor device using the same. The aluminum compound may be represented by Formula 1.
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公开(公告)号：US20210380622A1
公开(公告)日：2021-12-09
申请号：US17215056
申请日：2021-03-29
Applicant: Samsung Electronics Co., Ltd. , ADEKA CORPORATION
Inventor： Seung-Min Ryu , Gyu-Hee Park , Youn Joung Cho , Kazuki Harano , Takanori Koide , Wakana Fuse , Yoshiki Manabe , Yutaro Aoki , Hiroyuki Uchiuzou , Kazuya Saito
IPC: C07F17/00 , C23C16/18 , C23C16/455
Abstract: Materials for fabricating a thin film that has improved quality and productivity are provided. The materials may include a Group 5 element precursor of formula (1): M1 may be a Group 5 element, each of R1 to R10 independently may be a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, or f7onnula (2), R11 may be a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and L1 may be an alkyl group, an alkylamino group, an alkoxy group or an alkylsilyl group, each of which may have 1 to 5 carbon atoms and may be substituted or unsubstituted. Formula (2) may have a structure of Each of Ra to Rc independently may be a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms.
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公开(公告)号：US09923047B2
公开(公告)日：2018-03-20
申请号：US14967956
申请日：2015-12-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Se Hoon Oh , Seongyul Park , Chin Moo Cho , Yunjung Choi , Gyu-Hee Park , Youn-Joung Cho , Younsoo Kim , Jae Hyoung Choi
IPC: H01L49/02 , H01L21/322
CPC classification number: H01L28/65 , H01L21/322 , H01L28/75
Abstract: The inventive concepts provide semiconductor devices and methods for manufacturing the same in which the method includes forming a capacitor including a bottom electrode, a dielectric layer and a top electrode sequentially stacked on a substrate, and also where formation of the top electrode includes forming a first metal nitride layer on the dielectric layer, and forming a second metal nitride layer on the first metal nitride layer, in which the first metal nitride layer is disposed between the dielectric layer and the second metal nitride layer, and the first metal nitride layer is formed at a temperature lower than a temperature at which the second metal nitride layer is formed.
