公开(公告)号：US09399822B2

公开(公告)日：2016-07-26

申请号：US14312782

申请日：2014-06-24

Applicant: Samsung Electronics Co., Ltd. ,  Samyoung Pure Chemicals Co., Ltd. ,  Mitsubishi Gas Chemical Company, Inc.

Inventor： Dong-Min Kang ,  Hyungjun Jeon ,  Ingoo Kang ,  Jeong Kwon ,  Jung-ig Jeon ,  Jungsik Choi ,  Young Taek Hong ,  Akira Hosomi ,  Tomoko Suzuki

IPC: H01L21/44 ,  C23F1/18 ,  H01L21/3213 ,  H01L23/00

CPC classification number: C23F1/18 ,  H01L21/32134 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/0558 ,  H01L2224/05647 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01047 ,  H01L2924/01029

Abstract: The present inventive concepts provide a liquid composition for etching a metal containing copper. The liquid composition may include hydrogen peroxide in a range of about 0.1 wt % to about 10 wt % and a buffer solution in a range of about 0.1 wt % to about 10 wt %. The buffer solution may include citrate. The liquid composition may have a pH in a range of about 4.0 to about 7.0.

Abstract translation: 本发明构思提供了用于蚀刻含铜金属的液体组合物。 液体组合物可以包括约0.1重量％至约10重量％范围内的过氧化氢和约0.1重量％至约10重量％范围内的缓冲溶液。 缓冲溶液可以包括柠檬酸盐。 液体组合物可具有约4.0至约7.0范围内的pH。

公开(公告)号：US20130192722A1

公开(公告)日：2013-08-01

申请号：US13754008

申请日：2013-01-30

Applicant: Samsung Electronics Co., Ltd. ,  Dongwoo Fine-Chem Co., Ltd.

Inventor： Dong-Min Kang ,  Sunghoon Kim ,  Ingoo Kang ,  Taesung Kim ,  Jungjae Myung ,  Sang Tae Kim ,  Shijin Sung ,  In-Kak Song ,  Seunghyun Ahn ,  Kyoochul Cho

IPC: B23K35/362

Abstract: The inventive concept provides flux compositions for forming a solder bump and methods of fabricating a semiconductor device using the same. The flux composition may include a resin, an activator, and a solvent. The resin may include gum rosin and rosin ester, and a mass ratio of the gum rosin versus the rosin ester may have a range of about 60:40 to about 90:10.

Abstract translation: 本发明的概念提供了用于形成焊料凸块的焊剂组合物以及使用其制造半导体器件的方法。 焊剂组合物可以包括树脂，活化剂和溶剂。 树脂可以包括松香和松香酯，并且松香与松香酯的质量比可以为约60:40至约90:10的范围。

公开(公告)号：US09728446B2

公开(公告)日：2017-08-08

申请号：US14938941

申请日：2015-11-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ingoo Kang ,  Dong-Min Kang ,  Sangkyun Kim ,  Yun-Jeong Kim ,  Jungsik Choi ,  Young Taek Hong

IPC: H01L21/768 ,  C11D11/00 ,  C11D7/06 ,  C11D7/50 ,  H01L21/3105 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  C11D7/32 ,  B08B1/00 ,  B08B3/12 ,  B08B7/04 ,  H01L27/11582

CPC classification number: H01L21/76814 ,  B08B1/002 ,  B08B3/12 ,  B08B7/04 ,  C11D7/06 ,  C11D7/3245 ,  C11D7/5004 ,  C11D11/0047 ,  H01L21/02065 ,  H01L21/0337 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76877 ,  H01L27/11582

Abstract: Provided are a cleaning composition for removing an organic material remaining on an organic layer and a method of forming a semiconductor device using the composition. The cleaning composition includes 0.01-5 wt %. hydroxide based on a total weight of the cleaning composition and deionized water.

公开(公告)号：US20150079782A1

公开(公告)日：2015-03-19

申请号：US14312782

申请日：2014-06-24

Applicant: Samsung Electronics Co., Ltd. ,  Samyoung Pure Chemicals Co., Ltd. ,  Mitsubishi Gas Chemical Company, Inc.

Inventor： Dong-Min Kang ,  Hyungjun Jeon ,  Ingoo Kang ,  Jeong Kwon ,  Jung-ig Jeon ,  Jungsik Choi ,  Young Taek Hong ,  Akira Hosomi ,  Tomoko Suzuki

IPC: C23F1/18 ,  H01L21/3213 ,  H01L23/00

CPC classification number: C23F1/18 ,  H01L21/32134 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/0558 ,  H01L2224/05647 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01047 ,  H01L2924/01029

Abstract: The present inventive concepts provide a liquid composition for etching a metal containing copper. The liquid composition may include hydrogen peroxide in a range of about 0.1 wt % to about 10 wt % and a buffer solution in a range of about 0.1 wt % to about 10 wt %. The buffer solution may include citrate. The liquid composition may have a pH in a range of about 4.0 to about 7.0.

Abstract translation: 本发明构思提供了用于蚀刻含铜金属的液体组合物。 液体组合物可以包括约0.1重量％至约10重量％范围内的过氧化氢和约0.1重量％至约10重量％范围内的缓冲溶液。 缓冲溶液可以包括柠檬酸盐。 液体组合物可具有约4.0至约7.0范围内的pH。