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公开(公告)号：US10742737B2
公开(公告)日：2020-08-11
申请号：US16028791
申请日：2018-07-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Younggeun Choi , Jaehong Min
Abstract: An electronic device includes a storage device including a plurality of doorbell registers; a host configured to perform a first interface operation with the storage device using a first command queue managed by a first doorbell register from among the plurality of doorbell registers; and a third-party device configured to perform a second interface operation with the storage device using a second command queue managed by a second doorbell register from among the plurality of doorbell registers, without an intervention of the host, wherein at least the second doorbell register is allocated as one of one or more dedicated registers for use only with operations of the third-party device.
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公开(公告)号：US11862476B2
公开(公告)日：2024-01-02
申请号：US17076025
申请日：2020-10-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Minhee Cho , Junsoo Kim , Ho Lee , Chankyung Kim , Hei Seung Kim , Jaehong Min , Sangwuk Park , Woo Bin Song , Sang Woo Lee
CPC classification number: H01L21/34 , H01L21/02 , H01L21/28 , H10B12/053 , H10B12/31 , H10B12/482
Abstract: A semiconductor device can include a semiconductor substrate and an active region in the semiconductor substrate, where the active region can include an oxide semiconductor material having a variable atomic concentration of oxygen. A first source/drain region can be in the active region, where the first source/drain region can have a first atomic concentration of oxygen in the oxide semiconductor material. A second source/drain region can be in the active region spaced apart from first source/drain region and a channel region can be in the active region between the first source/drain region and the second source/drain region, where the channel region can have a second atomic concentration of oxygen in the oxide semiconductor material that is less than the first atomic concentration of oxygen. A gate electrode can be on the channel region and extend between the first source/drain region and the second source/drain region.
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公开(公告)号：US20190296018A1
公开(公告)日：2019-09-26
申请号：US16185892
申请日：2018-11-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Minhee Cho , Junsoo Kim , Ho Lee , Chankyung Kim , Hei Seung Kim , Jaehong Min , Sangwuk Park , Woo Bin Song , Sang Woo Lee
IPC: H01L27/108
Abstract: A semiconductor device can include a semiconductor substrate and an active region in the semiconductor substrate, where the active region can include an oxide semiconductor material having a variable atomic concentration of oxygen. A first source/drain region can be in the active region, where the first source/drain region can have a first atomic concentration of oxygen in the oxide semiconductor material. A second source/drain region can be in the active region spaced apart from first source/drain region and a channel region can be in the active region between the first source/drain region and the second source/drain region, where the channel region can have a second atomic concentration of oxygen in the oxide semiconductor material that is less than the first atomic concentration of oxygen. A gate electrode can be on the channel region and extend between the first source/drain region and the second source/drain region.
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公开(公告)号：US11635902B2
公开(公告)日：2023-04-25
申请号：US17344112
申请日：2021-06-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Duckho Bae , Dong-Uk Kim , Jaehong Min , Yong In Lee , Jooyoung Hwang
Abstract: A storage device which is connected to a host using a virtual memory includes a solid state drive that receives a streaming access command including a logical block address (LBA) list and a chunk size, and prefetches stream data requested according to the LBA list and the chunk size from a nonvolatile memory device without an additional command. The prefetched stream data is sequentially loaded onto a buffer, and an in-storage computing block accesses a streaming region registered on the virtual memory to sequentially read the stream data loaded onto the buffer in units of the chunk size. The buffer is mapped onto a virtual memory address of the streaming region.
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5.发明授权
公开(公告)号：US11061591B2
公开(公告)日：2021-07-13
申请号：US16562094
申请日：2019-09-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Duckho Bae , Dong-Uk Kim , Jaehong Min , Yong In Lee , Jooyoung Hwang
Abstract: A storage device which is connected to a host using a virtual memory includes a solid state drive that receives a streaming access command including a logical block address (LBA) list and a chunk size, and prefetches stream data requested according to the LBA list and the chunk size from a nonvolatile memory device without an additional command. The prefetched stream data is sequentially loaded onto a buffer, and an in-storage computing block accesses a streaming region registered on the virtual memory to sequentially read the stream data loaded onto the buffer in units of the chunk size. The buffer is mapped onto a virtual memory address of the streaming region.
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公开(公告)号：US20210057417A1
公开(公告)日：2021-02-25
申请号：US17076025
申请日：2020-10-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Minhee Cho , Junsoo Kim , Ho Lee , Chankyung Kim , Hei Seung Kim , Jaehong Min , Sangwuk Park , Woo Bin Song , Sang Woo Lee
IPC: H01L27/108
Abstract: A semiconductor device can include a semiconductor substrate and an active region in the semiconductor substrate, where the active region can include an oxide semiconductor material having a variable atomic concentration of oxygen. A first source/drain region can be in the active region, where the first source/drain region can have a first atomic concentration of oxygen in the oxide semiconductor material. A second source/drain region can be in the active region spaced apart from first source/drain region and a channel region can be in the active region between the first source/drain region and the second source/drain region, where the channel region can have a second atomic concentration of oxygen in the oxide semiconductor material that is less than the first atomic concentration of oxygen. A gate electrode can be on the channel region and extend between the first source/drain region and the second source/drain region.
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公开(公告)号：US10854612B2
公开(公告)日：2020-12-01
申请号：US16185892
申请日：2018-11-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Minhee Cho , Junsoo Kim , Ho Lee , Chankyung Kim , Hei Seung Kim , Jaehong Min , Sangwuk Park , Woo Bin Song , Sang Woo Lee
IPC: H01L27/108
Abstract: A semiconductor device can include a semiconductor substrate and an active region in the semiconductor substrate, where the active region can include an oxide semiconductor material having a variable atomic concentration of oxygen. A first source/drain region can be in the active region, where the first source/drain region can have a first atomic concentration of oxygen in the oxide semiconductor material. A second source/drain region can be in the active region spaced apart from first source/drain region and a channel region can be in the active region between the first source/drain region and the second source/drain region, where the channel region can have a second atomic concentration of oxygen in the oxide semiconductor material that is less than the first atomic concentration of oxygen. A gate electrode can be on the channel region and extend between the first source/drain region and the second source/drain region.
