公开(公告)号：US20170033013A1

公开(公告)日：2017-02-02

申请号：US15152815

申请日：2016-05-12

申请人： Samsung Electronics Co., Ltd.

发明人： Weon-hong Kim ,  Dong-su Yoo ,  Min-Joo Lee ,  Moon-Kyun Song ,  Soo-jung Choi

IPC分类号： H01L21/8234 ,  H01L21/76 ,  H01L29/06 ,  H01L21/324 ,  H01L27/088 ,  H01L21/322 ,  H01L29/66 ,  H01L21/02 ,  H01L21/28 ,  H01L21/311 ,  H01L21/306 ,  H01L21/30

CPC分类号： H01L21/823431 ,  H01L21/02057 ,  H01L21/0214 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/28158 ,  H01L21/3003 ,  H01L21/306 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/3221 ,  H01L21/3247 ,  H01L21/76 ,  H01L21/823462 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/66795 ,  H01L29/7854

摘要： An integrated circuit device may include a gate insulation layer covering a top surface and opposite sidewalls of a fin-shaped active region, a gate electrode covering the gate insulation layer and a hydrogen atomic layer disposed along an interface between the fin-shaped active region and the gate insulation layer. A method of manufacturing the integrated circuit device may include forming an insulating layer covering a lower portion of a preliminary fin-shaped active region, forming a fin-shaped active region having an outer surface with an increased smoothness through annealing an upper portion of the preliminary fin-shaped active region in a hydrogen atmosphere and forming a hydrogen atomic layer covering the outer surface of the fin-shaped active region. A gate insulation layer and a gate electrode may be formed to cover a top surface and opposite sidewalls of the fin-shaped active region.

摘要翻译： 集成电路器件可以包括覆盖鳍状有源区的顶表面和相对侧壁的栅极绝缘层，覆盖栅绝缘层的栅电极和沿翅片形有源区和 栅极绝缘层。 集成电路器件的制造方法可以包括：形成覆盖预备翅片状有源区域的下部的绝缘层，通过使初步的翅片状有源区域的上部退火而形成具有外表面的翅片状有源区域，其具有增加的平滑度 在氢气氛中形成翅片形有源区，形成覆盖鳍状有源区的外表面的氢原子层。 可以形成栅绝缘层和栅电极以覆盖鳍状有源区的顶表面和相对侧壁。

公开(公告)号：US09698021B2

公开(公告)日：2017-07-04

申请号：US14970105

申请日：2015-12-15

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Min-Joo Lee ,  Weon-Hong Kim ,  Moon-Kyun Song ,  Dong-Su Yoo ,  Soo-Jung Choi

IPC分类号： H01L21/28 ,  H01L21/02 ,  C23C16/455 ,  C23C16/458

CPC分类号： H01L21/28194 ,  C23C16/45544 ,  C23C16/4584 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02205 ,  H01L21/0228

摘要： In a method of forming a layer, a substrate is loaded into a chamber and placed at a home position that is a first relative angular position. A process cycle is performed a number of times while the substrate is at the home position. The cycle includes directing source gas onto the substrate at a first location adjacent the periphery of the substrate, purging the chamber, directing reaction gas onto the substrate from the first location, and purging the chamber. The cycle is performed another number of times while the substrate is at another relative angular position, i.e., at a position rotated about its general center relative from the home position.

公开(公告)号：US09779996B2

公开(公告)日：2017-10-03

申请号：US15152815

申请日：2016-05-12

申请人： Samsung Electronics Co., Ltd.

发明人： Weon-hong Kim ,  Dong-su Yoo ,  Min-Joo Lee ,  Moon-Kyun Song ,  Soo-jung Choi

IPC分类号： H01L21/30 ,  H01L21/8234 ,  H01L21/306 ,  H01L21/76 ,  H01L29/06 ,  H01L21/324 ,  H01L21/322 ,  H01L29/66 ,  H01L21/02 ,  H01L21/28 ,  H01L21/311 ,  H01L27/088

CPC分类号： H01L21/823431 ,  H01L21/02057 ,  H01L21/0214 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/28158 ,  H01L21/3003 ,  H01L21/306 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/3221 ,  H01L21/3247 ,  H01L21/76 ,  H01L21/823462 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/66795 ,  H01L29/7854

摘要： An integrated circuit device may include a gate insulation layer covering a top surface and opposite sidewalls of a fin-shaped active region, a gate electrode covering the gate insulation layer and a hydrogen atomic layer disposed along an interface between the fin-shaped active region and the gate insulation layer. A method of manufacturing the integrated circuit device may include forming an insulating layer covering a lower portion of a preliminary fin-shaped active region, forming a fin-shaped active region having an outer surface with an increased smoothness through annealing an upper portion of the preliminary fin-shaped active region in a hydrogen atmosphere and forming a hydrogen atomic layer covering the outer surface of the fin-shaped active region. A gate insulation layer and a gate electrode may be formed to cover a top surface and opposite sidewalls of the fin-shaped active region.