STORAGE DEVICE AND METHOD OF OPERATING THE SAME
    2.
    发明申请
    STORAGE DEVICE AND METHOD OF OPERATING THE SAME 有权
    存储装置及其操作方法

    公开(公告)号:US20150205716A1

    公开(公告)日:2015-07-23

    申请号:US14489676

    申请日:2014-09-18

    Abstract: A storage device is provided which includes a nonvolatile memory device configured to store a plurality of reference data, a memory configured to store a hash manage table used to manage a plurality of reference hash keys of each of the plurality of reference data, a hash key generator configured to generate a plurality of hash keys based on write requested data, and a memory controller configured to compare the plurality of hash keys and reference hash keys of each reference data to determine whether to store the write requested data in the nonvolatile memory device. The memory controller selects one of the plurality of reference data according to a similarity between the plurality of hash keys and the plurality of reference hash keys of each reference data and stores the write requested data and the selected reference data in the nonvolatile memory device to refer to each other.

    Abstract translation: 提供一种存储装置,其包括被配置为存储多个参考数据的非易失性存储装置,被配置为存储用于管理多个参考数据中的每一个的多个参考散列密钥的散列管理表的存储器,散列密钥 生成器,其被配置为基于写入请求的数据生成多个散列密钥;以及存储器控制器,被配置为比较每个参考数据的多个散列密钥和参考散列密钥,以确定是否将写入请求的数据存储在非易失性存储器件中。 存储器控制器根据多个散列键和每个参考数据的多个参考散列键之间的相似度来选择多个参考数据中的一个,并将写入请求的数据和所选择的参考数据存储在非易失性存储器件中以引用 对彼此。

    USER DEVICE INCLUDING A NONVOLATILE MEMORY DEVICE AND A DATA WRITE METHOD THEREOF

    公开(公告)号:US20180341582A1

    公开(公告)日:2018-11-29

    申请号:US16056781

    申请日:2018-08-07

    Abstract: An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.

    Nonvolatile memory device and operation method thereof

    公开(公告)号:US12165694B2

    公开(公告)日:2024-12-10

    申请号:US18223783

    申请日:2023-07-19

    Abstract: Disclosed is a nonvolatile memory device which include a memory cell array including a plurality of memory cells connected to a plurality of word lines, an address decoder that controls a selected word line among the plurality of word lines based on an address received from an external device including a first temperature sensor, a second temperature sensor that measures a read temperature of first memory cells connected to the selected word line from among the plurality of memory cells, and a temperature compensation circuit that calculates a read level offset based on the read temperature and a program temperature of the first memory cells measured by the first temperature sensor and generates a compensation read voltage based on the read level offset. The address decoder is further configured to provide the compensation read voltage to the selected word line.

    User device including a nonvolatile memory device and a data write method thereof

    公开(公告)号:US11093384B2

    公开(公告)日:2021-08-17

    申请号:US16877802

    申请日:2020-05-19

    Abstract: An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.

    User device including a nonvolatile memory device and a data write method thereof

    公开(公告)号:US10657042B2

    公开(公告)日:2020-05-19

    申请号:US16056781

    申请日:2018-08-07

    Abstract: An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.

    Data storage device including nonvolatile memory device and operating method thereof
    10.
    发明授权
    Data storage device including nonvolatile memory device and operating method thereof 有权
    包括非易失性存储装置的数据存储装置及其操作方法

    公开(公告)号:US09589640B2

    公开(公告)日:2017-03-07

    申请号:US14991173

    申请日:2016-01-08

    Abstract: A method of a operating a data storage device including a nonvolatile memory device and a memory controller is provided. The method includes reading a first selection transistors connected to a first selection line from among a plurality of selection lines with a reference voltage, determining whether a first number of selection transistors, from among the first selection transistors, which have a threshold voltage less than the reference voltage is larger than a first reference value, and if the first number is larger than the first reference value, programming the first selection transistors to have threshold voltage larger than or equal to a target voltage.

    Abstract translation: 提供了一种操作包括非易失性存储装置和存储器控制器的数据存储装置的方法。 该方法包括从多条选择线与参考电压读取连接到第一选择线的第一选择晶体管,确定来自第一选择晶体管的第一数量的选择晶体管是否具有小于 参考电压大于第一参考值,并且如果第一数量大于第一参考值,则将第一选择晶体管编程为具有大于或等于目标电压的阈值电压。

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