公开(公告)号：US09293596B2

公开(公告)日：2016-03-22

申请号：US14642326

申请日：2015-03-09

申请人： Samsung Electronics Co., Ltd.

发明人： Wenxu Xianyu ,  Chang-youl Moon ,  Jeong-yub Lee ,  Chang-seung Lee

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L29/16

CPC分类号： H01L29/78684 ,  H01L27/1266 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/78603

摘要： A graphene device may include a channel layer including graphene, a first electrode and second electrode on a first region and second region of the channel layer, respectively, and a capping layer covering the channel layer and the first and second electrodes. A region of the channel layer between the first and second electrodes is exposed by an opening in the capping layer. A gate insulating layer may be on the capping layer to cover the region of the channel layer, and a gate may be on the gate insulating layer.

公开(公告)号：US20170207275A1

公开(公告)日：2017-07-20

申请号：US15409656

申请日：2017-01-19

申请人： Samsung Electronics Co., Ltd.

发明人： Sung Heo ,  Kyu Sik Kim ,  Nam Jeong Kim ,  Seong Heon KIM ,  Yongsung Kim ,  Eunae Cho ,  Takkyun Ro ,  Dongjin Yun ,  Yongsu Kim ,  Wenxu Xianyu ,  Yong-Young Park ,  Kyung Bae Park

IPC分类号： H01L27/30 ,  H01L51/56 ,  H01L51/52 ,  H01L27/146 ,  H01L51/44 ,  H01L51/50

CPC分类号： H01L27/307 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14665 ,  H01L27/301 ,  H01L51/42 ,  H01L51/441 ,  H01L51/448 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5096 ,  H01L51/5203 ,  H01L51/56 ,  H01L2251/301 ,  H01L2251/552 ,  Y02E10/549

摘要： An optoelectronic device includes a first electrode and a second electrode facing each other a photoelectric conversion layer between the first electrode and the second electrode and a buffer layer between the photoelectric conversion layer and the second electrode. The buffer layer includes a nitride. The nitride includes one of silicon nitride (SiNx, 0

公开(公告)号：US10665637B2

公开(公告)日：2020-05-26

申请号：US16105259

申请日：2018-08-20

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Kyungbae Park ,  Wenxu Xianyu ,  Bonwon Koo ,  Takkyun Ro ,  Changseung Lee

IPC分类号： H01L27/30 ,  H01L27/146 ,  H01L51/44

摘要： Provided are an image sensor and a method of manufacturing the same. The image sensor may include a plurality of light detection elements arranged to correspond to a plurality of pixel regions, a color filter layer on the plurality of light detection elements and including a plurality of color filters arranged to correspond to the plurality of light detection elements, and a photodiode device portion on the color filter layer. The photodiode device portion may have curved structures. The photodiode device portion may include an organic material-based photodiode layer, a first electrode between the photodiode layer and the color filter layer, and a second electrode on the photodiode layer. The photodiode device portion may have curved convex structures respectively corresponding to the plurality of color filters.

公开(公告)号：US10181497B2

公开(公告)日：2019-01-15

申请号：US15409656

申请日：2017-01-19

申请人： Samsung Electronics Co., Ltd.

发明人： Sung Heo ,  Kyu Sik Kim ,  Nam Jeong Kim ,  Seong Heon Kim ,  Yongsung Kim ,  Eunae Cho ,  Takkyun Ro ,  Dongjin Yun ,  Yongsu Kim ,  Wenxu Xianyu ,  Yong-Young Park ,  Kyung Bae Park

IPC分类号： H01L27/30 ,  H01L51/44 ,  H01L51/50 ,  H01L51/52 ,  H01L27/146 ,  H01L51/56 ,  H01L51/42

摘要： An optoelectronic device includes a first electrode and a second electrode facing each other a photoelectric conversion layer between the first electrode and the second electrode and a buffer layer between the photoelectric conversion layer and the second electrode. The buffer layer includes a nitride. The nitride includes one of silicon nitride (SiNx, 0

公开(公告)号：US11158838B2

公开(公告)日：2021-10-26

申请号：US16268805

申请日：2019-02-06

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Wooyoung Yang ,  Wenxu Xianyu ,  Yongsung Kim ,  Changseung Lee

IPC分类号： H01L51/52 ,  C23C16/455 ,  C23C16/50 ,  H01L51/10 ,  C23C18/12

摘要： Provided are a flexible organic-inorganic passivation film and a method of forming the same. The flexible organic-inorganic passivation film includes an organic-inorganic passivation film formed by alternately and repeatedly forming an organic film and an inorganic film on a substrate. The organic film is formed by stacking plasma-process generated material on a material layer thereunder. The plasma-process generated material is formed by plasma processing a hydrocarbon or a fluorocarbon.

公开(公告)号：US09905606B2

公开(公告)日：2018-02-27

申请号：US15002755

申请日：2016-01-21

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Wenxu Xianyu ,  Yongyoung Park ,  Wooyoung Yang ,  Jeongyub Lee

IPC分类号： H01L27/146 ,  H01L31/0352 ,  H01L31/0224 ,  H01L27/144

CPC分类号： H01L27/14647 ,  H01L27/1446 ,  H01L27/14601 ,  H01L27/14607 ,  H01L27/14627 ,  H01L27/14692 ,  H01L31/022408 ,  H01L31/022425 ,  H01L31/035227

摘要： A photodetecting device, a method of manufacturing the photodetecting device, an image sensor, and a method of manufacturing the image sensor are provided. The photodetecting device includes a first insulation layer, a silicon layer disposed on the first insulation layer, a metal plug disposed through the first insulation layer and the silicon layer, a silicon wire disposed on the silicon layer, and an electrode connected to the silicon wire.