专利检索 ap:("SAMSUNG ELECTRONICS CO., LTD.") AND inv:"Yeonock Han" 第 1 页

1.

发明申请
GAS STORAGE CYLINDER, DEPOSITION SYSTEM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开

公开(公告)号：US20190309415A1

公开(公告)日：2019-10-10

申请号：US16200149

申请日：2018-11-26

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Yeonock Han , Wonwoong Chung , Keum Seok Park , Pankwi Park , Jeongho Yoo , Younjoung Cho , Byung Koo Kong , Mijeong Kim , Jin Wook Lee , Changeun Jang

IPC分类号： C23C16/448 , H01L21/02

摘要： A method of manufacturing a semiconductor device includes disposing a gas-storage cylinder storing monochlorosilane within a gas supply unit. The monochlorosilane is supplied from the gas-storage cylinder into a process chamber to form a silicon containing layer therein. The gas-storage cylinder includes manganese.

2.

发明授权
Gas storage cylinder, deposition system, and method of manufacturing semiconductor device 有权

公开(公告)号：US10883173B2

公开(公告)日：2021-01-05

申请号：US16200149

申请日：2018-11-26

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Yeonock Han , Wonwoong Chung , Keum Seok Park , Pankwi Park , Jeongho Yoo , Younjoung Cho , Byung Koo Kong , Mijeong Kim , Jin Wook Lee , Changeun Jang

IPC分类号： F17C1/00 , F17C13/02 , C23C16/448 , H01L21/02

摘要： A method of manufacturing a semiconductor device includes disposing a gas-storage cylinder storing monochlorosilane within a gas supply unit. The monochlorosilane is supplied from the gas-storage cylinder into a process chamber to form a silicon containing layer therein. The gas-storage cylinder includes manganese.