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公开(公告)号：US20170309754A1
公开(公告)日：2017-10-26
申请号：US15648943
申请日：2017-07-13
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Masashi TSUBUKU , Kengo AKIMOTO , Hiroki OHARA , Tatsuya HONDA , Takatsugu OMATA , Yusuke NONAKA , Masahiro TAKAHASHI , Akiharu MIYANAGA
IPC: H01L29/786 , H01L29/24 , H01L29/04 , H01L29/10
CPC classification number: H01L29/78696 , H01L29/045 , H01L29/1033 , H01L29/247 , H01L29/7869 , H01L29/78693
Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm−1 and less than or equal to 0.7 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−1 and less than or equal to 4.1 nm−1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm−1 and less than or equal to 1.4 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm−1 and less than or equal to 7.1 nm−1.
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公开(公告)号：US20160240694A1
公开(公告)日：2016-08-18
申请号：US15137613
申请日：2016-04-25
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Masashi TSUBUKU , Kengo AKIMOTO , Hiroki OHARA , Tatsuya HONDA , Takatsugu OMATA , Yusuke NONAKA , Masahiro TAKAHASHI , Akiharu MIYANAGA
IPC: H01L29/786 , H01L29/24
CPC classification number: H01L29/78696 , H01L29/045 , H01L29/1033 , H01L29/247 , H01L29/7869 , H01L29/78693
Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm−1 and less than or equal to 0.7 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−1 and less than or equal to 4.1 nm−1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm−1 and less than or equal to 1.4 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm−1 and less than or equal to 7.1 nm−1.
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公开(公告)号：US20130214273A1
公开(公告)日：2013-08-22
申请号：US13832479
申请日：2013-03-15
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Masashi TSUBUKU , Kengo AKIMOTO , Hiroki OHARA , Tatsuya HONDA , Takatsugu OMATA , Yusuke NONAKA , Masahiro TAKAHASHI , Akiharu MIYANAGA
IPC: H01L29/04
CPC classification number: H01L29/78696 , H01L29/045 , H01L29/1033 , H01L29/247 , H01L29/7869 , H01L29/78693
Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.
Abstract translation: 提供了具有更稳定的导电性的氧化物半导体膜。 此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。 氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。 通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。
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公开(公告)号：US20180308989A1
公开(公告)日：2018-10-25
申请号：US16021490
申请日：2018-06-28
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Masashi TSUBUKU , Kengo AKIMOTO , Hiroki OHARA , Tatsuya HONDA , Takatsugu OMATA , Yusuke NONAKA , Masahiro TAKAHASHI , Akiharu MIYANAGA
IPC: H01L29/786 , H01L29/04 , H01L29/10 , H01L29/24
CPC classification number: H01L29/78696 , H01L29/045 , H01L29/1033 , H01L29/247 , H01L29/7869 , H01L29/78693
Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm−1 and less than or equal to 0.7 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−1 and less than or equal to 4.1 nm−1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm−1 and less than or equal to 1.4 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm−1 and less than or equal to 7.1 nm−1.
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公开(公告)号：US20150179805A1
公开(公告)日：2015-06-25
申请号：US14635199
申请日：2015-03-02
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Masashi TSUBUKU , Kengo AKIMOTO , Hiroki OHARA , Tatsuya HONDA , Takatsugu OMATA , Yusuke NONAKA , Masahiro TAKAHASHI , Akiharu MIYANAGA
IPC: H01L29/786 , H01L29/10 , H01L29/04
CPC classification number: H01L29/78696 , H01L29/045 , H01L29/1033 , H01L29/247 , H01L29/7869 , H01L29/78693
Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm−1 and less than or equal to 0.7 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−1 and less than or equal to 4.1 nm−1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm−1 and less than or equal to 1.4 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm−1 and less than or equal to 7.1 nm−1.
Abstract translation: 提供了具有更稳定的导电性的氧化物半导体膜。 氧化物半导体膜包含结晶区域。 氧化物半导体膜具有在散射矢量的大小为散射矢量的大小的区域中具有大于或等于0.4nm -1且小于或等于0.7nm -1的半高全宽的电子衍射强度的第一峰值 大于或等于3.3nm -1且小于或等于4.1nm -1。 氧化物半导体膜具有第二峰电子衍射强度，半导体全宽度大于或等于0.45nm-1且小于或等于1.4nm-1，其中散射矢量的大小为 大于或等于5.5nm -1且小于或等于7.1nm -1。
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公开(公告)号：US20210159345A1
公开(公告)日：2021-05-27
申请号：US17167163
申请日：2021-02-04
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Masashi TSUBUKU , Kengo AKIMOTO , Hiroki OHARA , Tatsuya HONDA , Takatsugu OMATA , Yusuke NONAKA , Masahiro TAKAHASHI , Akiharu MIYANAGA
IPC: H01L29/786 , H01L29/04 , H01L29/10 , H01L29/24
Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm−1 and less than or equal to 0.7 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−1 and less than or equal to 4.1 nm−1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm−1 and less than or equal to 1.4 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm−1 and less than or equal to 7.1 nm−1.
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7.发明申请
公开(公告)号：US20150179777A1
公开(公告)日：2015-06-25
申请号：US14643208
申请日：2015-03-10
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Tatsuya HONDA , Takatsugu OMATA , Yusuke NONAKA
IPC: H01L29/66 , H01L21/02 , H01L29/786 , H01L21/477 , H01L29/04 , H01L29/24 , H01L21/4757 , H01L21/44
CPC classification number: H01L29/66969 , H01L21/0214 , H01L21/02164 , H01L21/02238 , H01L21/02255 , H01L21/02565 , H01L21/44 , H01L21/47573 , H01L21/477 , H01L29/045 , H01L29/24 , H01L29/42384 , H01L29/66742 , H01L29/78603 , H01L29/7869
Abstract: An object is to provide a highly reliable semiconductor device having stable electric characteristics by using an oxide semiconductor film having stable electric characteristics. Another object is to provide a semiconductor device having higher mobility by using an oxide semiconductor film having high crystallinity. A crystalline oxide semiconductor film is formed over and in contact with an insulating film whose surface roughness is reduced, whereby the oxide semiconductor film can have stable electric characteristics. Accordingly, the highly reliable semiconductor device having stable electric characteristics can be provided. Further, the semiconductor device having higher mobility can be provided.
Abstract translation: 目的是通过使用具有稳定电特性的氧化物半导体膜来提供具有稳定电特性的高度可靠的半导体器件。 另一个目的是通过使用具有高结晶度的氧化物半导体膜来提供具有较高迁移率的半导体器件。 结晶氧化物半导体膜形成在表面粗糙度减小的绝缘膜上并与其接触，由此氧化物半导体膜可以具有稳定的电特性。 因此，可以提供具有稳定电特性的高度可靠的半导体器件。 此外，可以提供具有较高移动性的半导体器件。
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公开(公告)号：US20140183532A1
公开(公告)日：2014-07-03
申请号：US14199257
申请日：2014-03-06
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Masashi TSUBUKU , Kengo AKIMOTO , Hiroki OHARA , Tatsuya HONDA , Takatsugu OMATA , Yusuke NONAKA , Masahiro TAKAHASHI , Akiharu MIYANAGA
IPC: H01L29/786
CPC classification number: H01L29/78696 , H01L29/045 , H01L29/1033 , H01L29/247 , H01L29/7869 , H01L29/78693
Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.
Abstract translation: 提供了具有更稳定的导电性的氧化物半导体膜。 此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。 氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。 通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。
