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公开(公告)号：US20240186331A1
公开(公告)日：2024-06-06
申请号：US18436245
申请日：2024-02-08
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yutaka OKAZAKI , Tomoaki Moriwaka , Shinya Sasagawa , Takashi Ohtsuki
IPC: H01L27/12 , H01L21/768 , H01L23/532 , H01L29/66 , H01L29/786
CPC classification number: H01L27/124 , H01L21/76849 , H01L27/1255 , H01L29/66742 , H01L29/66969 , H01L29/78603 , H01L29/78609 , H01L29/78648 , H01L29/78654 , H01L29/7869 , H01L23/53223 , H01L23/53238 , H01L23/53266
Abstract: To provide a miniaturized semiconductor device with low power consumption. A method for manufacturing a wiring layer includes the following steps: forming a second insulator over a first insulator; forming a third insulator over the second insulator; forming an opening in the third insulator so that it reaches the second insulator; forming a first conductor over the third insulator and in the opening; forming a second conductor over the first conductor; and after forming the second conductor, performing polishing treatment to remove portions of the first and second conductors above a top surface of the third insulator. An end of the first conductor is at a level lower than or equal to the top level of the opening. The top surface of the second conductor is at a level lower than or equal to that of the end of the first conductor.
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公开(公告)号：US11901372B2
公开(公告)日：2024-02-13
申请号：US18125426
申请日：2023-03-23
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yutaka Okazaki , Tomoaki Moriwaka , Shinya Sasagawa , Takashi Ohtsuki
IPC: H01L29/66 , H01L27/12 , H01L29/786 , H01L21/768 , H01L23/532
CPC classification number: H01L27/124 , H01L21/76849 , H01L27/1255 , H01L29/66742 , H01L29/66969 , H01L29/7869 , H01L29/78603 , H01L29/78609 , H01L29/78648 , H01L29/78654 , H01L23/53223 , H01L23/53238 , H01L23/53266
Abstract: To provide a miniaturized semiconductor device with low power consumption. A method for manufacturing a wiring layer includes the following steps: forming a second insulator over a first insulator; forming a third insulator over the second insulator; forming an opening in the third insulator so that it reaches the second insulator; forming a first conductor over the third insulator and in the opening; forming a second conductor over the first conductor; and after forming the second conductor, performing polishing treatment to remove portions of the first and second conductors above a top surface of the third insulator. An end of the first conductor is at a level lower than or equal to the top level of the opening. The top surface of the second conductor is at a level lower than or equal to that of the end of the first conductor.
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公开(公告)号：US11729965B2
公开(公告)日：2023-08-15
申请号：US17849854
申请日：2022-06-27
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Yuichi Sato , Ryota Hodo , Yuta Iida , Tomoaki Moriwaka
IPC: H10B12/00 , H01L21/02 , H01L21/311 , H01L21/321 , H01L23/532
CPC classification number: H10B12/30 , H01L21/02266 , H01L21/02274 , H01L21/31116 , H01L21/3212 , H01L23/5329 , H10B12/02
Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor and a capacitor. The transistor includes a metal oxide and a first conductor that is electrically connected to the metal oxide. The capacitor includes a first insulator which is provided over the metal oxide and which the first conductor penetrates; a second insulator provided over the first insulator and including an opening reaching the first insulator and the first conductor; a second conductor in contact with an inner wall of the opening, the first insulator, and the first conductor; a third insulator provided over the second conductor; and a fourth conductor provided over the third insulator. The first insulator has higher capability of inhibiting the passage of hydrogen than the second insulator.
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公开(公告)号：US11670705B2
公开(公告)日：2023-06-06
申请号：US17176211
申请日：2021-02-16
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei Yamazaki , Toshihiko Takeuchi , Naoto Yamade , Hiroshi Fujiki , Tomoaki Moriwaka , Shunsuke Kimura
CPC classification number: H01L29/66969 , H01L29/1054 , H01L29/4966
Abstract: A semiconductor device that can be miniaturized or highly integrated is provided.
The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.
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公开(公告)号：US11004961B2
公开(公告)日：2021-05-11
申请号：US16492282
申请日：2018-02-28
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei Yamazaki , Toshihiko Takeuchi , Naoto Yamade , Hiroshi Fujiki , Tomoaki Moriwaka , Shunsuke Kimura
Abstract: A semiconductor device that can be miniaturized or highly integrated is provided.
The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.
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公开(公告)号：US09910285B2
公开(公告)日：2018-03-06
申请号：US15424316
申请日：2017-02-03
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Koichiro Tanaka , Tomoaki Moriwaka
CPC classification number: G02B27/0955 , B23K26/06 , B23K26/0604 , B23K26/064 , B23K26/0732 , B23K26/0736 , B23K26/0738 , G02B27/09 , G02B27/095 , H01L21/02422 , H01L21/02532 , H01L21/02678 , H01L21/02683 , H01L21/02686 , H01L21/2026 , H01L21/268 , H01L21/28017 , H01L27/1285 , H01L27/3244 , H01L27/3295 , H01L33/08 , H01L51/5237 , H01L51/5246 , H01S3/005 , H01S5/4012 , H01S5/4025
Abstract: If an optical path length of an optical system is reduced and a length of a laser light on an irradiation surface is increased, there occurs curvature of field which is a phenomenon that a convergent position deviates depending on an incident angle or incident position of a laser light with respect to a lens. To avoid this phenomenon, an optical element having a negative power such as a concave lens or a concave cylindrical lens is inserted to regulate the optical path length of the laser light and a convergent position is made coincident with a irradiation surface to form an image on the irradiation surface.
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公开(公告)号：US09773820B2
公开(公告)日：2017-09-26
申请号：US14870912
申请日：2015-09-30
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yutaka Okazaki , Tomoaki Moriwaka , Shinya Sasagawa , Takashi Ohtsuki
IPC: H01L29/66 , H01L27/12 , H01L29/786
CPC classification number: H01L27/124 , H01L21/76849 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L27/1255 , H01L29/66742 , H01L29/66969 , H01L29/78603 , H01L29/78609 , H01L29/78648 , H01L29/78654 , H01L29/7869
Abstract: To provide a miniaturized semiconductor device with low power consumption. A method for manufacturing a wiring layer includes the following steps: forming a second insulator over a first insulator; forming a third insulator over the second insulator; forming an opening in the third insulator so that it reaches the second insulator; forming a first conductor over the third insulator and in the opening; forming a second conductor over the first conductor; and after forming the second conductor, performing polishing treatment to remove portions of the first and second conductors above a top surface of the third insulator. An end of the first conductor is at a level lower than or equal to the top level of the opening. The top surface of the second conductor is at a level lower than or equal to that of the end of the first conductor.
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公开(公告)号：US20140246668A1
公开(公告)日：2014-09-04
申请号：US14190370
申请日：2014-02-26
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Akihisa Shimomura , Tomoaki Moriwaka , Daigo Ito
IPC: H01L29/786 , H01L29/66
CPC classification number: H01L29/7869 , H01L29/66742 , H01L29/66969
Abstract: A miniaturized transistor having high electrical characteristics is provided with high yield. In a semiconductor device including the transistor, high performance, high reliability, and high productivity can be achieved. The semiconductor device includes a base insulating film, an oxide semiconductor film with a bottom surface and side surfaces in the base insulating film and a top surface exposed from the base insulating film, a source electrode and a drain electrode over the base insulating film and the oxide semiconductor film, a gate insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, and a gate electrode over the gate insulating film and overlapping the oxide semiconductor film.
Abstract translation: 提供具有高电特性的小型化晶体管，其产率高。 在包括晶体管的半导体器件中，可以实现高性能，高可靠性和高生产率。 半导体器件包括基底绝缘膜，底表面的氧化物半导体膜和基底绝缘膜中的侧表面以及从基底绝缘膜暴露的顶表面，在基底绝缘膜上的源电极和漏电极以及 氧化物半导体膜，氧化物半导体膜上的栅极绝缘膜，源电极和漏电极以及栅极绝缘膜上的与电极半导体膜重叠的栅电极。
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公开(公告)号：US12183747B2
公开(公告)日：2024-12-31
申请号：US18436245
申请日：2024-02-08
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yutaka Okazaki , Tomoaki Moriwaka , Shinya Sasagawa , Takashi Ohtsuki
IPC: H01L29/66 , H01L21/768 , H01L27/12 , H01L29/786 , H01L23/532
Abstract: To provide a miniaturized semiconductor device with low power consumption. A method for manufacturing a wiring layer includes the following steps: forming a second insulator over a first insulator; forming a third insulator over the second insulator; forming an opening in the third insulator so that it reaches the second insulator; forming a first conductor over the third insulator and in the opening; forming a second conductor over the first conductor; and after forming the second conductor, performing polishing treatment to remove portions of the first and second conductors above a top surface of the third insulator. An end of the first conductor is at a level lower than or equal to the top level of the opening. The top surface of the second conductor is at a level lower than or equal to that of the end of the first conductor.
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公开(公告)号：US11282860B2
公开(公告)日：2022-03-22
申请号：US16876286
申请日：2020-05-18
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Motomu Kurata , Shinya Sasagawa , Ryota Hodo , Katsuaki Tochibayashi , Tomoaki Moriwaka , Jiro Nishida , Hidekazu Miyairi , Shunpei Yamazaki
IPC: H01L27/12 , H01L29/786 , H01L29/66 , H01L23/522 , H01L27/13 , H01L21/84 , H01L21/822
Abstract: The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less.
