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公开(公告)号：US20250015193A1
公开(公告)日：2025-01-09
申请号：US18748238
申请日：2024-06-20
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Fumito ISAKA , Yuichi SATO , Toshikazu OHNO , Hitoshi KUNITAKE , Tsutomu MURAKAWA
IPC: H01L29/786 , H01L21/02 , H01L29/66 , H10B12/00 , H10K59/121
Abstract: Provided are a transistor with favorable electrical characteristics, a transistor with a high on-state current, a transistor with low parasitic capacitance, or a transistor, a semiconductor device, or a memory device which can be miniaturized or highly integrated. An oxide semiconductor layer included in the transistor, the semiconductor device, or the memory device includes a first region, a second region over the first region, and a third region over the second region. The first region is located in a range from a surface on which the oxide semiconductor layer is to be formed to greater than or equal to 0 nm to less than or equal to 3 nm in a direction substantially perpendicular to the surface. In cross-sectional observation of the oxide semiconductor layer using a transmission electron 10 microscope, bright spots arranged in a layered manner in a direction parallel to the surface are observed in each of the first region, the second region, and the third region.
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2.发明公开
公开(公告)号：US20240224734A1
公开(公告)日：2024-07-04
申请号：US18555903
申请日：2022-04-12
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Yasuhiro JINBO , Toshikazu OHNO , Shiyuu NUMATA
CPC classification number: H10K59/874 , H10K50/19 , H10K71/60
Abstract: A highly reliable display apparatus is provided. The display apparatus includes a first light-emitting device, a second light-emitting device, and an inorganic insulating layer. The first light-emitting device includes a first pixel electrode, a first light-emitting layer over the first pixel electrode, and a common electrode over the first light-emitting layer. The second light-emitting device includes a second pixel electrode, a second light-emitting layer over the second pixel electrode, and the common electrode over the second light-emitting layer. The inorganic insulating layer covers side surfaces of the first pixel electrode, the second pixel electrode, the first light-emitting layer, and the second light-emitting layer. The hydrogen concentration and the carbon concentration in the inorganic insulating layer are each preferably sufficiently low.
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公开(公告)号：US20230052499A1
公开(公告)日：2023-02-16
申请号：US17778538
申请日：2020-11-16
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Yoshihiro KOMATSU , Shiori SAGA , Yohei MOMMA , Hiroshi KADOMA , Toshikazu OHNO , Shunpei YAMAZAKI
Abstract: Secondary batteries using lithium cobalt oxide as positive electrode active materials have a problem of a decrease in battery capacity due to repeated charging/discharging, for example. A positive electrode active material particle which hardly deteriorates is provided. In a first step, a container in which a lithium oxide and a fluoride are set is placed in a heating furnace, and in a second step, the inside of the heating furnace is heated in an atmosphere containing oxygen. The heating temperature of the second step is from 750° C. to 950° C., inclusive. By the manufacturing method, fluorine can be contained in the positive electrode active material particle to increase the wettability of the surface of the positive electrode active material so that the surface of the positive electrode active material is homogenized and planarized. The crystal structure of the thus manufactured positive electrode active material is unlikely to be broken in repeated high-voltage charging/discharging. Thus, secondary batteries using the positive electrode active material having such a feature have greatly improved cycle characteristics.
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公开(公告)号：US20210226062A1
公开(公告)日：2021-07-22
申请号：US17256341
申请日：2019-06-25
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Haruyuki BABA , Naoki OKUNO , Yoshihiro KOMATSU , Toshikazu OHNO
IPC: H01L29/786 , H01L29/49 , H01L29/51
Abstract: A semiconductor device having a large on-state current and high reliability is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a third oxide and a fourth oxide over the second oxide, a first conductor over the third oxide, a second conductor over the fourth oxide, a fifth oxide over the second oxide, a second insulator over the fifth oxide, and a third conductor over the second insulator. The fifth oxide is in contact with a top surface of the second oxide, a side surface of the first conductor, a side surface of the second conductor, a side surface of the third oxide, and a side surface of the fourth oxide. The second oxide contains In, an element M, and Zn. The first oxide and the fifth oxide each contain at least one of constituent elements included in the second oxide. The third oxide and the fourth oxide each contain the element M. The third oxide and the fourth oxide include a region where the concentration of the element M is higher than that in the second oxide.
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公开(公告)号：US20240387741A1
公开(公告)日：2024-11-21
申请号：US18619261
申请日：2024-03-28
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Haruyuki BABA , Naoki OKUNO , Yoshihiro KOMATSU , Toshikazu OHNO
IPC: H01L29/786 , H01L29/49 , H01L29/51
Abstract: A semiconductor device having a large on-state current and high reliability is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a third oxide and a fourth oxide over the second oxide, a first conductor over the third oxide, a second conductor over the fourth oxide, a fifth oxide over the second oxide, a second insulator over the fifth oxide, and a third conductor over the second insulator. The fifth oxide is in contact with a top surface of the second oxide, a side surface of the first conductor, a side surface of the second conductor, a side surface of the third oxide, and a side surface of the fourth oxide. The second oxide contains In, an element M, and Zn. The first oxide and the fifth oxide each contain at least one of constituent elements included in the second oxide. The third oxide and the fourth oxide each contain the element M. The third oxide and the fourth oxide include a region where the concentration of the element M is higher than that in the second oxide.
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公开(公告)号：US20240002998A1
公开(公告)日：2024-01-04
申请号：US18213683
申请日：2023-06-23
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Yuichi SATO , Fumito ISAKA , Toshikazu OHNO
IPC: C23C14/34
CPC classification number: C23C14/3414
Abstract: A novel sputtering target is provided. The sputtering target includes a first region and a second region. The first region contains a first metal oxide containing an element M1 (the element M1 is one or more elements selected from Al, Ga, Si, Mg, Zr, and B). The second region contains a second metal oxide containing indium and zinc. The first region and the second region are separated from each other. Each of the first region and the second region is a crystal grain. A crystal grain boundary is observed between the first region and the second region. The diameter of each of the first region and the second region is greater than or equal to 5 nm and less than or equal to 10 μm.
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公开(公告)号：US20200212185A1
公开(公告)日：2020-07-02
申请号：US16693974
申请日：2019-11-25
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Daisuke YAMAGUCHI , Shinobu KAWAGUCHI , Yoshihiro KOMATSU , Toshikazu OHNO , Yasumasa YAMANE , Tomosato KANAGAWA
IPC: H01L29/26 , H01L27/108
Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.
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公开(公告)号：US20250031422A1
公开(公告)日：2025-01-23
申请号：US18785690
申请日：2024-07-26
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Daisuke YAMAGUCHI , Shinobu KAWAGUCHI , Yoshihiro KOMATSU , Toshikazu OHNO , Yasumasa YAMANE , Tomosato KANAGAWA
Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.
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公开(公告)号：US20230389332A1
公开(公告)日：2023-11-30
申请号：US18032651
申请日：2021-10-11
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Yasuhiro JINBO , Toshikazu OHNO , Yuichi SATO , Sachie ETO , Shinobu KAWAGUCHI
IPC: H10B53/30
CPC classification number: H10B53/30
Abstract: A ferroelectric device having favorable ferroelectricity is provided. The ferroelectric device includes a first conductor over a first insulator, a ferroelectric layer over the first conductor, a second conductor over the ferroelectric layer, a second insulator over the second conductor, and a third insulator surrounding the first conductor, the ferroelectric layer, the second conductor, and the second insulator. The second insulator has a function of capturing or fixing hydrogen, and the third insulator has a function of inhibiting hydrogen diffusion.
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公开(公告)号：US20220037534A1
公开(公告)日：2022-02-03
申请号：US17278828
申请日：2019-10-01
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Yoshihiro KOMATSU , Toshikazu OHNO
IPC: H01L29/786 , H01L27/12 , H01L27/06 , H01L21/8234
Abstract: A semiconductor device having high reliability is provided. The semiconductor device includes a transistor and an insulator placed so as to surround the transistor; the insulator has a barrier property against hydrogen; the transistor includes an oxide and a conductor; the conductor includes nitrogen and a metal; the conductor has a physical property of extracting hydrogen; the conductor includes a region having a hydrogen concentration higher than or equal to 2.0×1019 atoms/cm3 and lower than or equal to 1.0×1021 atoms/cm3; and at least part of hydrogen atoms included in the region is bonded to a nitrogen atom.
