PATTERN FORMING PROCESS
    2.
    发明申请

    公开(公告)号:US20180239255A1

    公开(公告)日:2018-08-23

    申请号:US15901029

    申请日:2018-02-21

    CPC classification number: G03F7/36 G03F7/0392 G03F7/162 G03F7/20

    Abstract: A pattern is formed by (i) applying a chemically amplified positive resist composition comprising (A) a base resin, (B) a photoacid generator, (C) an organic solvent, and (D) a polyvinyl alcohol or polyvinyl alkyl ether onto a substrate to form a resist film thereon, (ii) exposing the resist film to radiation, and (iii) dry etching the resist film with an oxygen-containing gas for development. Using the chemically amplified positive resist composition, a positive pattern is formed via dry development without a need for silylation.

    Organosiloxane-modified novolak resin and making method
    6.
    发明授权
    Organosiloxane-modified novolak resin and making method 有权
    有机硅氧烷改性酚醛清漆树脂及其制备方法

    公开(公告)号:US09238708B2

    公开(公告)日:2016-01-19

    申请号:US14330175

    申请日:2014-07-14

    CPC classification number: C08G61/02 C08G8/28 C08G2261/144 C08G2261/3424

    Abstract: An organosiloxane-modified novolak resin comprising structural units having formula (1) wherein R1 is an organosiloxy group having a monovalent C1-C10 hydrocarbon group bonded to silicon, and R2 is H or C1-C4 alkyl or alkoxy. The resin has high heat resistance and high strength inherent to novolak resins and low stress inherent to organosilicon compounds.

    Abstract translation: 包含具有式(1)的结构单元的有机硅氧烷改性的酚醛清漆树脂,其中R1是具有与硅键合的一价C1-C10烃基的有机甲硅烷氧基,R2是H或C1-C4烷基或烷氧基。 该树脂具有高耐热性和酚醛清漆树脂固有的高强度以及有机硅化合物固有的低应力。

    ORGANOSILOXANE-MODIFIED NOVOLAK RESIN AND MAKING METHOD
    7.
    发明申请
    ORGANOSILOXANE-MODIFIED NOVOLAK RESIN AND MAKING METHOD 有权
    有机硅改性NOVOLAK树脂和制备方法

    公开(公告)号:US20150057416A1

    公开(公告)日:2015-02-26

    申请号:US14330175

    申请日:2014-07-14

    CPC classification number: C08G61/02 C08G8/28 C08G2261/144 C08G2261/3424

    Abstract: An organosiloxane-modified novolak resin comprising structural units having formula (1) wherein R1 is an organosiloxy group having a monovalent C1-C10 hydrocarbon group bonded to silicon, and R2 is H or C1-C4 alkyl or alkoxy. The resin has high heat resistance and high strength inherent to novolak resins and low stress inherent to organosilicon compounds.

    Abstract translation: 包含具有式(1)的结构单元的有机硅氧烷改性酚醛清漆树脂,其中R1是具有与硅键合的一价C1-C10烃基的有机甲硅烷氧基,R2是H或C1-C4烷基或烷氧基。 该树脂具有高耐热性和酚醛清漆树脂固有的高强度以及有机硅化合物固有的低应力。

    METHODS FOR MANUFACTURING RESIN STRUCTURE AND MICRO-STRUCTURE
    8.
    发明申请
    METHODS FOR MANUFACTURING RESIN STRUCTURE AND MICRO-STRUCTURE 有权
    制造树脂结构和微结构的方法

    公开(公告)号:US20140220497A1

    公开(公告)日:2014-08-07

    申请号:US14154257

    申请日:2014-01-14

    CPC classification number: G03F7/2024 G03F7/00 G03F7/039 G03F7/40

    Abstract: A resin structure for the formation of a micro-structure is manufactured by (A) applying a composition comprising a polymer, a photoacid generator, an epoxy compound, and an organic solvent onto a substrate, (B) heating the composition to form a sacrificial film, (C) exposing imagewise the film to first high-energy radiation, (D) developing the film in an alkaline developer to form a sacrificial film pattern, (E) exposing the sacrificial film pattern to UV as second high-energy radiation, and (F) heating the substrate at 80-250° C. The exposure dose of first high-energy radiation in step (C) is up to 250 mJ/cm2. At the end of step (F), the sacrificial film has a sidewall angle of 80°-90° relative to the substrate.

    Abstract translation: 通过(A)将包含聚合物,光致酸产生剂,环氧化合物和有机溶剂的组合物涂布在基材上来制造用于形成微结构的树脂结构体,(B)加热组合物以形成牺牲品 (C)将膜成像曝光于第一高能辐射,(D)在碱性显影剂中显影所述膜以形成牺牲膜图案;(E)将所述牺牲膜图案暴露于UV作为第二高能辐射, 和(F)在80-250℃下加热基材。步骤(C)中第一高能辐射的曝光剂量高达250mJ / cm 2。 在步骤(F)结束时,牺牲膜相对于基底具有80°-90°的侧壁角。

    CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS
    9.
    发明申请
    CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS 有权
    化学放大正电阻组合物和图案形成过程

    公开(公告)号:US20140087294A1

    公开(公告)日:2014-03-27

    申请号:US14033569

    申请日:2013-09-23

    CPC classification number: G03F7/0392 G03F7/0045 G03F7/20

    Abstract: In a chemically amplified positive resist composition comprising (A) a base resin, (B) a photoacid generator, (C) a thermal crosslinker, and (D) an organic solvent, the base resin is a specific polymer and the crosslinker is a siloxane compound. A coating of the composition is readily developable in aqueous alkaline solution. On heat treatment, it forms a cured resist pattern film of satisfactory profile.

    Abstract translation: 在包含(A)基础树脂,(B)光致酸发生剂,(C)热交联剂和(D)有机溶剂)的化学增幅正型抗蚀剂组合物中,基础树脂是特定的聚合物,交联剂是硅氧烷 复合。 组合物的涂层在碱性水溶液中容易显影。 在热处理时,形成具有令人满意的轮廓的固化的抗蚀剂图案膜。

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