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公开(公告)号:US10680068B2
公开(公告)日:2020-06-09
申请号:US16319053
申请日:2017-07-13
申请人: SICOXS CORPORATION
摘要: A technique related to a bonded semiconductor substrate capable of reducing an interface resistance is provided. The semiconductor substrate comprises a single-crystalline SiC substrate and a polycrystalline SiC substrate. The single-crystalline SIC substrate and the polycrystalline SiC substrate are bonded. A bonded region of the single-crystalline SiC substrate and the polycrystalline SiC substrate contains 1×1021 (atoms/cm3) or more of particular atoms.