公开(公告)号：US07732010B2

公开(公告)日：2010-06-08

申请号：US11406136

申请日：2006-04-18

申请人： Soo Young Choi ,  Beom Soo Park ,  Quanyuan Shang ,  Robert I. Greene ,  John M. White ,  Dong-Kil Yim ,  Chung-Hee Park ,  Kam Law

发明人： Soo Young Choi ,  Beom Soo Park ,  Quanyuan Shang ,  Robert I. Greene ,  John M. White ,  Dong-Kil Yim ,  Chung-Hee Park ,  Kam Law

IPC分类号： C23C16/00

CPC分类号： H01J37/32082 ,  C23C16/4581 ,  C25D11/04 ,  C25D11/16 ,  C25D11/18

摘要： A method for supporting a glass substrate comprising providing a substrate support having an aluminum body, a substrate contact area formed on the surface of the substrate support, wherein the process of forming the substrate contact area comprises forming an anodization layer on a surface region of the aluminum body, the coating having a thickness of between about 0.3 mils and about 2.16 mils, wherein the surface region substantially corresponds to the substrate contact area, and preparing the anodization layer disposed over the surface region to a surface roughness between about 88 micro-inches and about 230 micro-inches, followed by anodizing the substrate surface to said thickness, positioning the substrate support adjacent a substrate processing region in a substrate processing chamber, wherein the substrate contact area is adjacent the substrate processing region, positioning the glass substrate on the substrate contact area.

摘要翻译： 一种用于支撑玻璃基板的方法，包括提供具有铝体的基板支撑件，形成在所述基板支撑件的表面上的基板接触区域，其中形成所述基板接触区域的工艺包括在所述基板支撑件的表面区域上形成阳极氧化层 铝体，所述涂层具有在约0.3密耳和约2.16密耳之间的厚度，其中所述表面区域基本上对应于所述基底接触面积，以及将所述阳极氧化层设置在所述表面区域上方的表面粗糙度在约88微英寸 约230微英寸，然后将基板表面阳极化至所述厚度，将基板支撑件邻近基板处理区域定位在基板处理室中，其中基板接触区域与基板处理区域相邻，将玻璃基板定位在基板处理区域上 基板接触面积。

公开(公告)号：US06355108B1

公开(公告)日：2002-03-12

申请号：US09338245

申请日：1999-06-22

申请人： Tae Kyung Won ,  Quanyuan Shang ,  Robert M. Robertson ,  Soo Young Choi ,  Kam S. Law ,  Robert I. Greene ,  John M. White

发明人： Tae Kyung Won ,  Quanyuan Shang ,  Robert M. Robertson ,  Soo Young Choi ,  Kam S. Law ,  Robert I. Greene ,  John M. White

IPC分类号： C23C1600

CPC分类号： C23C16/24 ,  C23C16/345 ,  C23C16/4583 ,  C23C16/4585 ,  H01J37/32623

摘要： The present invention relates generally to a clamping and alignment assembly for a substrate processing system. The clamping and aligning assembly generally includes a shadow frame, a floating plasma shield and a plurality of insulating alignment pins. The shadow frame comprises a plurality of tabs extending inwardly therefrom and is shaped to accommodate a substrate. The tabs comprise protruding contact surfaces for stabilizing a substrate on a support member during processing. The insulating alignment pins are disposed at a perimeter of a movable support member and cooperate with an alignment recess formed in the shadow frame to urge the shadow frame into a desired position. Preferably, the floating plasma shield is disposed on the insulating alignment pins in spaced relationship between the support member and the shadow frame to shield the perimeter of the support member during processing.

摘要翻译： 本发明一般涉及用于衬底处理系统的夹紧和对准组件。 夹持和对准组件通常包括阴影框架，浮动等离子体屏蔽件和多个绝缘对准销钉。 阴影框架包括从其向内延伸的多个突片，并且成形为容纳衬底。 突片包括用于在加工期间稳定支撑构件上的基板的突出接触表面。 绝缘对准销布置在可移动支撑构件的周边处，并与形成在阴影框架中的对准凹槽配合，以将阴影框架推动到期望的位置。 优选地，浮动等离子体屏蔽以间隔开的关系设置在绝缘对准销上，在支撑构件和阴影框架之间，以在加工期间屏蔽支撑构件的周边。

公开(公告)号：US08795793B2

公开(公告)日：2014-08-05

申请号：US12254742

申请日：2008-10-20

申请人： Soo Young Choi ,  John M. White ,  Robert I. Greene

发明人： Soo Young Choi ,  John M. White ,  Robert I. Greene

IPC分类号： H05H1/24 ,  C23C16/00 ,  C23C16/455

CPC分类号： C23C16/45559 ,  B05B1/005 ,  C23C16/4405 ,  C23C16/45565 ,  H01J37/3244

摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. At least one of the gas passages has a right cylindrical shape for a portion of its length extending from the upstream side and a coaxial conical shape for the remainder length of the diffuser plate, the upstream end of the conical portion having substantially the same diameter as the right cylindrical portion and the downstream end of the conical portion having a larger diameter. The gas distribution plate is relatively easy to manufacture and provides good chamber cleaning rate, good thin film deposition uniformity and good thin film deposition rate. The gas distribution plate also has the advantage of reduced chamber cleaning residues on the diffuser surface and reduced incorporation of the cleaning residues in the thin film being deposited.

摘要翻译： 提供了用于在处理室中分配气体的气体分配板的实施例。 在一个实施例中，气体分配板包括具有上游侧和下游侧的扩散板和通过扩散板的上游侧和下游侧之间的多个气体通道。 气体通道中的至少一个具有从上游侧延伸的一部分长度的右圆柱形状，并且对于扩散板的剩余长度为同轴圆锥形，锥形部分的上游端具有与 锥形部分的右圆柱形部分和下游端具有较大的直径。 气体分配板相对容易制造，提供良好的室清洁率，良好的薄膜沉积均匀性和良好的薄膜沉积速率。 气体分配板还具有减小扩散器表面上的室清洁残留物的优点，并且减少了沉积在薄膜中的清洁残余物的结合。

公开(公告)号：US20090104376A1

公开(公告)日：2009-04-23

申请号：US12254742

申请日：2008-10-20

申请人： SOO YOUNG CHOI ,  John M. White ,  Robert I. Greene

发明人： SOO YOUNG CHOI ,  John M. White ,  Robert I. Greene

IPC分类号： C23C16/513 ,  B08B6/00

CPC分类号： C23C16/45559 ,  B05B1/005 ,  C23C16/4405 ,  C23C16/45565 ,  H01J37/3244

摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. At least one of the gas passages has a right cylindrical shape for a portion of its length extending from the upstream side and a coaxial conical shape for the remainder length of the diffuser plate, the upstream end of the conical portion having substantially the same diameter as the right cylindrical portion and the downstream end of the conical portion having a larger diameter. The gas distribution plate is relatively easy to manufacture and provides good chamber cleaning rate, good thin film deposition uniformity and good thin film deposition rate. The gas distribution plate also has the advantage of reduced chamber cleaning residues on the diffuser surface and reduced incorporation of the cleaning residues in the thin film being deposited.

摘要翻译： 提供了用于在处理室中分配气体的气体分配板的实施例。 在一个实施例中，气体分配板包括具有上游侧和下游侧的扩散板和通过扩散板的上游侧和下游侧之间的多个气体通道。 气体通道中的至少一个具有从上游侧延伸的一部分长度的右圆柱形状，并且对于扩散板的剩余长度为同轴圆锥形，锥形部分的上游端具有与 锥形部分的右圆柱形部分和下游端具有较大的直径。 气体分配板相对容易制造，提供良好的室清洁率，良好的薄膜沉积均匀性和良好的薄膜沉积速率。 气体分配板还具有减小扩散器表面上的室清洁残留物的优点，并且减少了沉积在薄膜中的清洁残余物的结合。

公开(公告)号：US10676817B2

公开(公告)日：2020-06-09

申请号：US13569064

申请日：2012-08-07

申请人： Qunhua Wang ,  Soo Young Choi ,  Robin L. Tiner ,  John M. White ,  Gaku Furuta ,  Beom Soo Park

发明人： Qunhua Wang ,  Soo Young Choi ,  Robin L. Tiner ,  John M. White ,  Gaku Furuta ,  Beom Soo Park

IPC分类号： C23C16/04 ,  C23C16/458 ,  C23C14/04

摘要： Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.

公开(公告)号：US08674844B2

公开(公告)日：2014-03-18

申请号：US12661699

申请日：2010-03-19

申请人： Beom Soo Park ,  Hong Soon Kim ,  Soo Young Choi ,  James Hoffman ,  Suhail Anwar ,  John M. White

发明人： Beom Soo Park ,  Hong Soon Kim ,  Soo Young Choi ,  James Hoffman ,  Suhail Anwar ,  John M. White

IPC分类号： G08B21/00

CPC分类号： H01J37/32183 ,  H01J37/32935 ,  H01J37/3299

摘要： Malfunction of a component within an RF-powered plasma chamber is detected by observing an operating condition of the plasma chamber and detecting when the operating condition deviates from a previously observed range bounded by lower and upper limits. The lower and upper limits are determined by observing the minimum and maximum values of that operating condition during the processing of workpieces throughout one or more plasma chamber cleaning cycles immediately preceding the most recent cleaning of the plasma chamber.

摘要翻译： 通过观察等离子体室的操作状态并检测何时操作条件偏离由下限和上限限定的先前观察范围，来检测RF供电的等离子体室内部件的故障。 通过在紧邻等离子体室的最近清洁之前的一个或多个等离子体室清洁循环期间观察工件处理期间该操作条件的最小值和最大值来确定下限和上限。

公开(公告)号：US20130140009A1

公开(公告)日：2013-06-06

申请号：US13722637

申请日：2012-12-20

申请人： John M. White ,  Soo Young Choi ,  Beom Soo Park ,  Gaku Furuta ,  Young Jin Choi ,  Robin L. Tiner

发明人： John M. White ,  Soo Young Choi ,  Beom Soo Park ,  Gaku Furuta ,  Young Jin Choi ,  Robin L. Tiner

IPC分类号： F28D7/00

CPC分类号： F28D7/00 ,  C23C16/4405 ,  F28D2021/0078 ,  F28F9/26

摘要： The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component.

公开(公告)号：US08361549B2

公开(公告)日：2013-01-29

申请号：US13315366

申请日：2011-12-09

申请人： Dong-Kil Yim ,  John M. White ,  Soo Young Choi ,  Han Byoul Kim ,  Jin Man Ha ,  Beom Soo Park

发明人： Dong-Kil Yim ,  John M. White ,  Soo Young Choi ,  Han Byoul Kim ,  Jin Man Ha ,  Beom Soo Park

IPC分类号： C23C16/00 ,  H05H1/24

CPC分类号： C23C16/4401 ,  C23C14/02 ,  C23C14/564 ,  C23C16/0209 ,  H01J2237/2001

摘要： A method for preventing particle contamination within a processing chamber is disclosed. Preheating the substrate within the processing chamber may cause a thermophoresis effect so that particles within the chamber that are not adhered to a surface may not come to rest on the substrate. One method to increase the substrate temperature is to plasma load the substrate. Plasma loading comprises providing an inert gas plasma to the substrate to heat the substrate. Another method to increase the substrate temperature is high pressure loading the substrate. High pressure loading comprises heating the substrate while increasing the chamber pressure to between about 1 Torr and about 10 Torr. By rapidly increasing the substrate temperature within the processing chamber prior to substrate processing, particle contamination is less likely to occur.

摘要翻译： 公开了一种防止处理室内的颗粒污染的方法。 预处理室内的衬底可能引起热泳效应，使得室内未附着于表面的颗粒可能不会停留在衬底上。 增加衬底温度的一种方法是等离子体加载衬底。 等离子体负载包括向衬底提供惰性气体等离子体以加热衬底。 提高衬底温度的另一种方法是加载衬底的高压。 高压负载包括加热衬底，同时将腔室压力提高到约1托和约10托之间。 通过在基板处理之前快速增加处理室内的基板温度，不太可能发生颗粒污染。

公开(公告)号：US08147614B2

公开(公告)日：2012-04-03

申请号：US12794756

申请日：2010-06-06

申请人： John M. White ,  Carl Sorensen ,  Robin Tiner ,  Beom Soo Park ,  Soo Young Choi

发明人： John M. White ,  Carl Sorensen ,  Robin Tiner ,  Beom Soo Park ,  Soo Young Choi

IPC分类号： C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/45591 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449

摘要： Embodiments of the disclosure generally provide a method and apparatus for processing a substrate in a vacuum process chamber. In one embodiment a vacuum process chamber is provided that includes a chamber body and lid disposed on the chamber body. A blocker plate is coupled to the lid and bounds a staging plenum therewith. A gas distribution plate is coupled to the lid. The gas distribution plate separates a main plenum defined between the gas distribution plate and the blocker plate from a process volume defined within the chamber body. The gas distribution plate and the blocker plate define a spacing gradient therebetween which influences mixing of gases within the main plenum.

摘要翻译： 本公开的实施例通常提供用于在真空处理室中处理衬底的方法和装置。 在一个实施例中，提供真空处理室，其包括设置在室主体上的室主体和盖。 阻挡板联接到盖子并且与其分隔起来。 气体分配板联接到盖子上。 气体分配板将限定在气体分配板和阻挡板之间的主增压室与室主体内限定的过程体积分开。 气体分配板和阻挡板限定了它们之间的间隔梯度，其影响主增压室内气体的混合。

公开(公告)号：US08083853B2

公开(公告)日：2011-12-27

申请号：US10889683

申请日：2004-07-12

申请人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

发明人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

IPC分类号： C23C16/00 ,  C23C16/455 ,  H01L21/3065

CPC分类号： H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

摘要翻译： 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。