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公开(公告)号:US10748726B2
公开(公告)日:2020-08-18
申请号:US16222017
申请日:2018-12-17
Applicant: STMicroelectronics (Rousset) SAS
Inventor: Christian Rivero , Pascal Fornara , Antonio Di-Giacomo , Brice Arrazat
Abstract: A device includes a thermally deformable assembly accommodated in a cavity of the interconnection part of an integrated circuit. The assembly can bend when there is a variation in temperature, so that its free end zone is displaced vertically. The assembly can be formed in the back end of line of the integrated circuit.
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公开(公告)号:US20150116072A1
公开(公告)日:2015-04-30
申请号:US14517369
申请日:2014-10-17
Applicant: STMicroelectronics (Rousset) SAS
Inventor: Christian Rivero , Pascal Fornara , Antonio di-Giacomo , Brice Arrazat
CPC classification number: H01H61/02 , B81B3/0021 , B81B2201/031 , B81B2203/053 , H01H1/58 , H01H9/02
Abstract: A device includes a thermally deformable assembly accommodated in a cavity of the interconnection part of an integrated circuit. The assembly can bend when there is a variation in temperature, so that its free end zone is displaced vertically. The assembly can be formed in the back end of line of the integrated circuit.
Abstract translation: 一种装置包括容纳在集成电路的互连部分的空腔中的热变形组件。 当温度变化时,组件可以弯曲,使其自由端区垂直移位。 组件可以形成在集成电路的线路的后端。
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公开(公告)号:US20140360851A1
公开(公告)日:2014-12-11
申请号:US14286331
申请日:2014-05-23
Applicant: STMicroelectronics (Rousset) SAS
Inventor: Christian Rivero , Pascal Fornara , Antonio di-Giacomo , Brice Arrazat
IPC: H01H59/00 , H01L21/822 , H01L27/06
CPC classification number: H01H59/0009 , B81B2201/018 , B81C1/00246 , B81C2203/0735 , B81C2203/0771 , H01H1/0036 , H01H57/00 , H01H2001/0068 , H01H2001/0078 , H01H2059/0054 , H01L21/8221 , H01L23/522 , H01L27/0617 , H01L27/0688 , H01L2924/0002 , H01L2924/00
Abstract: An integrated circuit includes an interconnection part with several metallization levels. An electrically activatable switching device within the interconnection part has an assembly that includes a beam held by a structure. The beam and structure are located within the same metallization level. Locations of fixing of the structure on the beam are arranged so as to define for the beam a pivot point situated between these fixing locations. The structure is substantially symmetric with respect to the beam and to a plane perpendicular to the beam in the absence of a potential difference. The beam is able to pivot in a first direction in the presence of a first potential difference applied between a first part of the structure and to pivot in a second direction in the presence of a second potential difference applied between a second part of the structure.
Abstract translation: 集成电路包括具有多个金属化级别的互连部件。 互连部件内的可电激活的开关装置具有包括由结构保持的梁的组件。 梁和结构位于相同的金属化水平内。 布置结构在梁上的固定位置,以便为梁定义位于这些固定位置之间的枢转点。 该结构在不存在电位差的情况下相对于光束和垂直于光束的平面基本对称。 在存在施加在结构的第一部分之间的第一电位差并且在存在施加在结构的第二部分之间的第二电位差的情况下在第二方向上枢转时,梁能够在第一方向上枢转。
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公开(公告)号:US20200083011A1
公开(公告)日:2020-03-12
申请号:US16680940
申请日:2019-11-12
Applicant: STMicroelectronics (Rousset) SAS
Inventor: Christian Rivero , Pascal Fornara , Antonio Di-Giacomo , Brice Arrazat
Abstract: Methods of operating a switching device are provided. The switching device is formed in an interconnect, the interconnect including a plurality of metallization levels, and has an assembly that includes a beam held by a structure. The beam and structure are located within the same metallization level. Locations of fixing of the structure on the beam are arranged so as to define for the beam a pivot point situated between these fixing locations. The structure is substantially symmetric with respect to the beam and to a plane perpendicular to the beam in the absence of a potential difference. The beam is able to pivot in a first direction in the presence of a first potential difference applied between a first part of the structure and to pivot in a second direction in the presence of a second potential difference applied between a second part of the structure.
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公开(公告)号:US10510503B2
公开(公告)日:2019-12-17
申请号:US14985083
申请日:2015-12-30
Applicant: STMicroelectronics (Rousset) SAS
Inventor: Christian Rivero , Pascal Fornara , Antonio di-Giacomo , Brice Arrazat
IPC: H01H59/00 , H01L27/06 , H01L21/822 , H01H1/00 , B81C1/00 , H01H57/00 , H01L23/522
Abstract: Methods of forming and operating a switching device are provided. The switching device is formed in an interconnect, the interconnect including a plurality of metallization levels, and has an assembly that includes a beam held by a structure. The beam and structure are located within the same metallization level. Locations of fixing of the structure on the beam are arranged so as to define for the beam a pivot point situated between these fixing locations. The structure is substantially symmetric with respect to the beam and to a plane perpendicular to the beam in the absence of a potential difference. The beam is able to pivot in a first direction in the presence of a first potential difference applied between a first part of the structure and to pivot in a second direction in the presence of a second potential difference applied between a second part of the structure.
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公开(公告)号:US10157720B2
公开(公告)日:2018-12-18
申请号:US14517369
申请日:2014-10-17
Applicant: STMicroelectronics (Rousset) SAS
Inventor: Christian Rivero , Pascal Fornara , Antonio di-Giacomo , Brice Arrazat
Abstract: A device includes a thermally deformable assembly accommodated in a cavity of the interconnection part of an integrated circuit. The assembly can bend when there is a variation in temperature, so that its free end zone is displaced vertically. The assembly can be formed in the back end of line of the integrated circuit.
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公开(公告)号:US20160107886A1
公开(公告)日:2016-04-21
申请号:US14985083
申请日:2015-12-30
Applicant: STMicroelectronics (Rousset) SAS
Inventor: Christian Rivero , Pascal Fornara , Antonio di-Giacomo , Brice Arrazat
Abstract: Methods of forming and operating a switching device are provided. The switching device is formed in an interconnect, the interconnect including a plurality of metallization levels, and has an assembly that includes a beam held by a structure. The beam and structure are located within the same metallization level. Locations of fixing of the structure on the beam are arranged so as to define for the beam a pivot point situated between these fixing locations. The structure is substantially symmetric with respect to the beam and to a plane perpendicular to the beam in the absence of a potential difference. The beam is able to pivot in a first direction in the presence of a first potential difference applied between a first part of the structure and to pivot in a second direction in the presence of a second potential difference applied between a second part of the structure.
Abstract translation: 提供了形成和操作开关装置的方法。 开关装置形成在互连中,互连包括多个金属化层,并且具有包括由结构保持的梁的组件。 梁和结构位于相同的金属化水平内。 布置结构在梁上的固定位置,以便为梁定义位于这些固定位置之间的枢转点。 该结构在不存在电位差的情况下相对于光束和垂直于光束的平面基本对称。 在存在施加在结构的第一部分之间的第一电位差并且在存在施加在结构的第二部分之间的第二电位差的情况下在第二方向上枢转时,梁能够在第一方向上枢转。
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公开(公告)号:US12057513B2
公开(公告)日:2024-08-06
申请号:US18210155
申请日:2023-06-15
Applicant: STMicroelectronics (Rousset) SAS
Inventor: Christian Rivero , Brice Arrazat , Julien Delalleau , Joel Metz
IPC: H01L21/00 , H01L21/265 , H01L21/28 , H01L29/423 , H01L29/788 , H01L29/94 , H01L49/02 , H10B41/35
CPC classification number: H01L29/945 , H01L21/2652 , H01L28/91 , H01L29/40114 , H01L29/4236 , H01L29/788 , H10B41/35
Abstract: A semiconductor substrate includes excavations which form trenches sunk. A capacitive element includes: a first dielectric envelope conforming to sides and bottoms of the trenches; a first semiconductor layer conforming to a surface of the first dielectric envelope in the trenches; a second dielectric envelope conforming to a surface of the first semiconductor layer in the trenches; and a second semiconductor layer conforming to a surface of the second dielectric envelope in the trenches.
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公开(公告)号:US11721773B2
公开(公告)日:2023-08-08
申请号:US17366585
申请日:2021-07-02
Applicant: STMicroelectronics (Rousset) SAS
Inventor: Christian Rivero , Brice Arrazat , Julien Delalleau , Joel Metz
IPC: H01L21/00 , H01L29/94 , H01L21/28 , H01L21/265 , H01L49/02 , H01L29/423 , H01L29/788 , H10B41/35
CPC classification number: H01L29/945 , H01L21/2652 , H01L28/91 , H01L29/40114 , H01L29/4236 , H01L29/788 , H10B41/35
Abstract: A semiconductor substrate includes excavations which form trenches sunk. A capacitive element includes: a first dielectric envelope conforming to sides and bottoms of the trenches; a first semiconductor layer conforming to a surface of the first dielectric envelope in the trenches; a second dielectric envelope conforming to a surface of the first semiconductor layer in the trenches; and a second semiconductor layer conforming to a surface of the second dielectric envelope in the trenches.
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公开(公告)号:US20190122845A1
公开(公告)日:2019-04-25
申请号:US16222017
申请日:2018-12-17
Applicant: STMicroelectronics (Rousset) SAS
Inventor: Christian Rivero , Pascal Fornara , Antonio Di-Giacomo , Brice Arrazat
CPC classification number: H01H61/02 , B81B3/0021 , B81B2201/031 , B81B2203/053 , H01H1/58 , H01H9/02
Abstract: A device includes a thermally deformable assembly accommodated in a cavity of the interconnection part of an integrated circuit. The assembly can bend when there is a variation in temperature, so that its free end zone is displaced vertically. The assembly can be formed in the back end of line of the integrated circuit.
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