VOLTAGE REGULATOR WITH CONTROLLED CURRENT CONSUMPTION IN DROPOUT MODE

    公开(公告)号:US20200272184A1

    公开(公告)日:2020-08-27

    申请号:US16285330

    申请日:2019-02-26

    发明人: Sandor PETENYI

    IPC分类号: G05F1/575 G05F1/565 H03F3/45

    摘要: An amplifier stage of an LDO regulator circuit includes an amplifier stage that generates a drive signal in response to a first voltage difference an output voltage of the LDO regulator circuit and a reference voltage. A drive stage having a quiescent current consumption is configured to generate a control signal in response to the drive signal. The control signal is applied to the control terminal of a power transistor. A dropout detector senses whether the LDO regulator circuit is operating in closed loop regulation mode or in open loop dropout mode by sensing a second difference in voltage between the drive signal and the control signal. A quiescent current limiter circuit responds to the sensed second difference by controlling the quiescent current consumption of the drive stage, and in particular limiting current consumption when the LDO regulator circuit is operating in the open loop dropout mode.

    CHARGE PUMP WITH LOAD DRIVEN CLOCK FREQUENCY MANAGEMENT

    公开(公告)号:US20210234546A1

    公开(公告)日:2021-07-29

    申请号:US17227974

    申请日:2021-04-12

    发明人: Sandor PETENYI

    摘要: A circuit includes a current controller oscillator generating a CCO output signal at a CCO output, a charge pump boosting a supply voltage based on the CCO output signal and producing a charge pump output voltage at an output, and a current sensing circuit sensing load current at the output and generating a feedback signal having a magnitude that varies with the sensed load current if a magnitude of the sensed load current is between lower and upper load current thresholds. A frequency of the CCO output signal is constant at a lower frequency threshold where the sensed load current is below the lower load current threshold, asymptomically rises to an upper frequency threshold where the sensed load current is above the upper load current threshold, and is proportional to the feedback signal where the sensed load current is between the lower and upper load current thresholds.

    CHARGE PUMP WITH LOAD DRIVING CLOCK FREQUENCY MANAGEMENT

    公开(公告)号:US20200295767A1

    公开(公告)日:2020-09-17

    申请号:US16353122

    申请日:2019-03-14

    发明人: Sandor PETENYI

    摘要: A charge pump circuit has load driven clock frequency management. The charge pump circuit includes a CCO generating a CCO output signal that has a frequency generally proportional to a feedback current, and a charge pump operated by the CCO output signal and boosting a supply voltage to produce a charge pump output voltage at an output coupled to a load. A current sensing circuit senses a load current drawn by the load and generates the feedback current as having a magnitude that varies as a function of the sensed load current if a magnitude of the load current is between a lower load current threshold and an upper load current threshold. The magnitude of the feedback current does not vary with the sensed load current if the magnitude of the sensed load current is not between the lower load current threshold and the upper load current threshold.

    CIRCUIT EMPLOYING MOSFETS AND CORRESPONDING METHOD

    公开(公告)号:US20210328563A1

    公开(公告)日:2021-10-21

    申请号:US17362276

    申请日:2021-06-29

    发明人: Sandor PETENYI

    IPC分类号: H03F3/45 H03F1/02 H03F1/30

    摘要: A MOSFET has a current conduction path between source and drain terminals. A gate terminal of the MOSFET receives an input signal to facilitate current conduction in the current conduction path as a result of a gate-to-source voltage reaching a threshold voltage. A body terminal of the MOSFET is coupled to body voltage control circuitry that is sensitive to the voltage at the gate terminal of the MOSFET. The body voltage control circuitry responds to a reduction in the voltage at the gate terminal of the MOSFET by increasing the body voltage of the MOSFET at the body terminal of the MOSFET. As a result, there is reduction in the threshold voltage. The circuit configuration is applicable to amplifier circuits, comparator circuits and current mirror circuits.

    VOLTAGE REGULATOR WITH DROPOUT DETECTOR AND BIAS CURRENT LIMITER AND ASSOCIATED METHODS

    公开(公告)号:US20170102724A1

    公开(公告)日:2017-04-13

    申请号:US14881498

    申请日:2015-10-13

    发明人: Sandor PETENYI

    IPC分类号: G05F1/575

    CPC分类号: G05F1/575

    摘要: A voltage regulator includes an input terminal to receive an input voltage, an output terminal to supply an output voltage, a power transistor, a differential amplifier, a driver, a dropout detector and a bias current limiter. The differential amplifier provides a drive signal based on a difference between a voltage reference and a feedback signal corresponding to the output voltage. The driver includes an impedance device, and a driver transistor that receives the drive signal so as to vary a bias current to a control terminal of the power transistor. The dropout detector and the bias current limiter is coupled to the input terminal, the impedance device, and the output terminal and includes first and second transistors coupled together, and a bias current generator coupled to the second transistor.

    CIRCUIT EMPLOYING MOSFETS AND CORRESPONDING METHOD

    公开(公告)号:US20200259473A1

    公开(公告)日:2020-08-13

    申请号:US16786182

    申请日:2020-02-10

    发明人: Sandor PETENYI

    IPC分类号: H03F3/45 H03F1/30 H03F1/02

    摘要: A MOSFET has a current conduction path between source and drain terminals. A gate terminal of the MOSFET receives an input signal to facilitate current conduction in the current conduction path as a result of a gate-to-source voltage reaching a threshold voltage. A body terminal of the MOSFET is coupled to body voltage control circuitry that is sensitive to the voltage at the gate terminal of the MOSFET. The body voltage control circuitry responds to a reduction in the voltage at the gate terminal of the MOSFET by increasing the body voltage of the MOSFET at the body terminal of the MOSFET. As a result, there is reduction in the threshold voltage. The circuit configuration is applicable to amplifier circuits, comparator circuits and current mirror circuits.

    VOLTAGE REGULATOR HAVING BIAS CURRENT BOOSTING

    公开(公告)号:US20180120876A1

    公开(公告)日:2018-05-03

    申请号:US15336029

    申请日:2016-10-27

    发明人: Sandor PETENYI

    IPC分类号: G05F1/575 H03F3/45

    摘要: A voltage regulator having bias current boosting is provided. The voltage regulator includes a power stage for providing an output voltage to a load. The voltage regulator includes a differential stage that receives a feedback voltage representative of the output voltage and a reference voltage and controls the power stage based on a difference between the reference voltage and the feedback voltage. The voltage regulator includes a bias current boosting stage that receives the feedback and reference voltages. The bias current boosting stage provides a boosted bias current having a current level that is based on the difference between the reference and feedback voltages. The boosted bias current biases the differential stage and hastens a response of the differential stage, in response to a change in the difference between the reference voltage and the feedback voltage, in controlling the power stage.